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TRENCHSTOPTMPerformancetechnology IGW30N60TP 600VIGBTTRENCHSTOPTMPerformanceseries Datasheet IndustrialPowerControl

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering

  • verylowVCEsat
  • lowturn-offlosses
  • shorttailcurrent
  • lowEMI
  • maximumjunctiontemperature175°C
  • qualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • drives
  • solarinverters
  • uninterruptiblepowersupplies
  • converterswithmediumswitchingfrequency G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGW30N60TP 600V 30A 1.6V 175°C G30DTP PG-TO247-3

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 TableofContents

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 53.0 38.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 90.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs1) - 90.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC µs PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 200.0 100.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - 0.50 0.75 K/W 1) Defined by design. Not subject to production test.

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=175°C 1.60 1.94 1.80 V Gate-emitter threshold voltage VGE(th) IC=0.48mA,VCE=VGE 4.1 5.1 5.7 V Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 26.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 1050 - Output capacitance Coes - 45 - Reverse transfer capacitance Cres - 36 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=480V,IC=30.0A, VGE=15V - 130.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 137 - A SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 15 - ns Rise time tr - 21 - ns Turn-off delay time td(off) - 179 - ns Fall time tf - 12 - ns Turn-on energy Eon - 0.71 - mJ Turn-off energy Eoff - 0.42 - mJ Total switching energy Ets - 1.13 - mJ Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.5Ω ,RG(off)=10.5Ω , Lσ=32nH,Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW30N60DTP) reverse recovery.

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 15 - ns Rise time tr - 23 - ns Turn-off delay time td(off) - 220 - ns Fall time tf - 59 - ns Turn-on energy Eon - 0.99 - mJ Turn-off energy Eoff - 0.74 - mJ Total switching energy Ets - 1.73 - mJ Tvj=175°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.5Ω ,RG(off)=10.5Ω , Lσ=32nH,Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW30N60DTP) reverse recovery.

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions

TRENCHSTOPTMPerformanceSeries Rev.2.1,2016-02-05 RevisionHistory IGW30N60TP Revision:2016-02-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 - Release of final datasheet Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2016. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.