IGBR VISHAY | Alldatasheet

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www.vishay.com Vishay Electro-Films Revision: 29-Mar-2021 1 Document Number: 61107 For technical questions, contact: efi@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Thin Film, High Power Back-Contact Resistor LINKS TO ADDITIONAL RESOURCES The high power back-contact resistor (IGBR) series thin film chip resistor utilizes the ex cellent thermal properties of silicon to allow ultra high power rating with miniature case size for hybrid (chip and wire) assemblies. The IGBR requires only one wi re bond thus saving hybrid space. The IGBRs are manufactured us ing Vishay Electro-Films (EFI) sophisticated thin film equipment and manufacturing technology. The IGBRs are 100 % electrically tested and visually inspected to MIL-STD-883, method 2032 class H, class K, or commercial inspection per internal standards.

FEATURES

  • Wire bondable
  • Small size
  • High power rating
  • Single wire bond assembly
  • Moisture resistant
  • Case size: 0202 to 0808
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • Gate resistor for IGBT based power converters
  • Current limiting for LED lighting applications
  • High power applications
  • Alternative energy
  • Hybrid assemblies TCR (ppm/°C) BY CASE SIZE AND VALUE 333DDD3 D 3D Models Videos Infographics Did You Know? Capabilities and Custom Options TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES PARAMETER VALUE UNIT Total Resistance Range 1.8 to 25 Ω Standard Tolerances 5, 10, 25 % TCR ± 500 ppm/°C 1.8 500 300 250 200 300 250 200350 500 300 250n/a n/a20 x 20 40 x 40 60 x 60 Case Size (mil) 80 x 80 500 300 500 53.3 8 10 15 Value (/g58) 20 22 25

www.vishay.com Vishay Electro-Films Revision: 29-Mar-2021 2 Document Number: 61107 For technical questions, contact: efi@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) See table “Power Rating by Case Size” (2) Power rating determined by application specific heat sink properties. Film temperature should not exceed 200 °C. See table “Power Rating by Case Size” for more details (3) Aluminum pads and aluminum wire bonds are sensitive to high moisture environments. Adequate application level packaging is required to protect the components and wire bonds from moisture related damage Notes (1) Typical R thermal between film and back contact. Does not include die attach joint (epoxy or solder) (2) Dimension tolerances are ± 0.05 mm (± 2 mil) SCHEMATIC STANDARD ELECTRICAL SPECIFICATIONS PARAMETER VALUE UNIT Operating Film Temperature Range 200 max. °C Operating Temperature Range -55 to +125 °C Working Voltage 75 max. V Breakdown Voltage 400 max. V Thermal Resistivity (1) Down to 2 K/W DC Power Rating (1)(2) Up to 4 W Load Life Stability, 1000 h, Film Temperature 200 °C ± 1 ΔR/R % Short Time Overload, 5 x Rated Power, 25 °C, 5 s ± 0.25 ΔR/R % Thermal Shock, MIL-STD-202, Method 107 F ± 1 ΔR/R % Moisture Resistance, MIL-STD-202, Method 106 (3) ± 0.25 ΔR/R % High Temperature Exposure, 100 h, +150 °C ± 0.5 ΔR/R % Low Temperature Operation, -65 °C, 45 min ± 0.5 ΔR/R % POWER RATING BY CASE SIZE CASE SIZE CHIP SIZE mil (mm) (2) BOND PAD SIZE mil (mm) DIE THICKNESS mil (mm) (2) TYPICAL R THERMAL (1) K/W R MIN. Ω R MAX. Ω 0404 40 x 40 (1 x 1) 15 x 36 (0.38 x 0.91) 10 (0.25) 7 3.3 25 0808 80 x 80 (2 x 2) 27 x 76 (0.69 x 1.93) 10 (0.25) 2 1.8 25 PIN PIN 2 Back contact PIN 2 Back contact PIN 1 Top contact R Test pad not used during normal operation

www.vishay.com Vishay Electro-Films Revision: 29-Mar-2021 3 Document Number: 61107 For technical questions, contact: efi@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MATERIAL SPECIFICATIONS PARAMETER Chip Substrate Material Oxidized silicon, 10 kÅ minimum SiO Film Material Tantalum Nitride Case Size See table “Power Rating by Case Size” Passivation None Number of Pads 1 Top Terminations Suitable for Heavy Gage Aluminum Wire-Bonding Al (2.5 μm min.) Back Termination (for epoxy, lead (Pb)-free solder or silver compression assembly) P = TiW (500 Å to 1000 Å) Pd (2000 Å to 3000 Å) Au (3000 Å to 5000 Å) N = TiW (500 Å to 1000 Å) Ni (6000 Å to 7000 Å) Au (3000 Å to 5000 Å) T = TiW (500 Å to 1000 Å) Au (1000 Å to 3000 Å) Ni (40 μ" minimum) Au (40 μ" minimum) MATERIAL SPECIFICATIONS VERSION A (20 x 20) VERSION B (40 x 40) IGBRA - 15 Ω to 25 Ω IGBRB - 3.3 Ω to 12.9 Ω IGBRB - 13 Ω to 25 Ω

www.vishay.com Vishay Electro-Films Revision: 29-Mar-2021 4 Document Number: 61107 For technical questions, contact: efi@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) See “Material Specifications” table for metal thickness VERSION C (60 x 60) VERSION D (80 x 80) GLOBAL PART NUMBER INFORMATION Global Part Number: IGBRB3000CJOPCST Global Part Number Description: IGBR 1 mm 3 Ω 5 % 300 ppm/°C PD Commercial Tape MODEL SIZE RESISTANCE (Ω) RESISTANCE MULTIPLIER CODE TOL. CODE (%) TCR (ppm/°C) BACKSIDE TERMINATION VISUAL CLASS PACKAGING CODE IGBR High power back- contact resistor A = 20 x 20 B = 40 x 40 C = 60 x 60 D = 80 x 80 First 4 digits are significant figures of resistance C = 0.001 B = 0.01 A = 0.1 J = 5 K = 10 M = 20 L = 25 J = ± 500 W = ± 350 O = ± 300 M = ± 250 P = TiW / Pd / Au N = TiW / Ni / Au T = TiW / Au/ Ni/Au (1) C = commercial H = class H K = class K WS = waffle pack 100 min., 1 mult. ST = diced on tape MATERIAL SPECIFICATIONS 000C O PC JB SRGB 3 TI

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