IFX007T

IFX007T INFINEON | Alldatasheet

Document overview

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Technical content

Features

Path resistance of max. 12.8 m Ω @ 25°C (typ. 10.0 mΩ @ 25°C) High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C) Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C)
Enhanced switching speed fo r reduced switching losses
Capable for high PWM frequency co mbined with active freewheeling
Switched mode current limitation for reduced power dissipation in overcurrent
Current limitation level of 55 A min.
Status flag diagnosis with current sense capability
Overtemperature shutdown with latch behavior
Undervoltage shutdown
Driver circuit with logic level inputs
Adjustable slew rates for optimized EMI
Operation up to 40 V
Green Product (RoHS compliant)
JESD47I Qualified

Description

The IFX007T is an integrated high current half bridge for motor drive applications. It is part of the Industrial & Multi Purpose NovalithIC™ family co ntaining one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package. Due to the p-channel high-s ide switch the need for a charge pump is eliminated thus minimizing EMI. Inte rfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit. The IFX007T provides a cost optimized solution for pr otected high current PWM mo tor drives with very low board space consumption.

Data Sheet 2 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Overview Type Package Marking IFX007T PG-TO263-7-1 IFX007T

Data Sheet 3 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Table of Contents

Data Sheet 4 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block diagram

2 Block diagram

The IFX007T is part of the Industrial & Multi Purpose NovalithIC™ family containing three separate chips in one package: One p-channel high-side MO SFET and one n-channel low-side MO SFET together wi th a driver IC, forming an integrated high current half-bridge. All three chips are mounted on one common lead frame, using the chip-on chip and chip-by-chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with cu rrent sense, slew rate ad justment, dead time generation and protection against overtemperature, un dervoltage, overcurrent and short circui t. The IFX007T can be combined with other IFX007Ts to form a H-bridge or a3-phase drive configuration.

2.1 Block diagram

2.2 Terms

Following figure shows the terms used in this data sheet. Figure 2 Terms IS SR INH IN GND OUT VS Gate Driver HS Slewrate Adjustment Digital Logic Undervolt. detection Overtemp . detection Current Limitation LS Current Limitation HS Current Sense Gate Driver LS LS off HS off IIN VIN OUT IINH VINH VSR ISR VIS IIS VS IOUT , I L VOUT VDS(HS) GND IGND, ID(LS) IVS , -I D(HS) IN INH SR IS VS VDS(LS)

Data Sheet 5 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Pin configuration

3 Pin configuration

3.1 Pin assignment

Figure 3 Pin assignment IFX007T (top view)

3.2 Pin definitions and functions

Bold type: pin needs power wiring Table 1 Pin defini tions and functions Pin Symbol I/O Function 1G N D – G r o u n d 2I N I I n p u t Defines whether high - or low-side switch is activated

3 INH I Inhibit

When set to low device goes in sleep mode 4,8 OUT O Power output of the bridge 5S R I S l e w R a t e The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND

6 IS O Current Sense and Diagnostics

7 VS – Supply

Data Sheet 6 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T General product characteristics

4 General product characteristics

The device is intended to be used in an industrial or consumer environment. The circumstances, how the device environment must look like are described in this chapter.

4.1 Absolute maximum ratings

Stresses above the ones listed here may cause perm anent damage to the devi ce. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2 Absolute maximum ratings 1) Tj = 25 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Voltages Supply voltage V Drain-source voltage high side VDS(HS) - 4 0 ––V Tj ≥ 25°C P_4.1.2 Drain-source voltage low side VDS(LS) –– 4 0 V Tj ≥ 25°C P_4.1.3 –– 3 8 V Tj < 25°C Logic input voltage VIN VINH Voltage at SR pin VSR -0.3 – 1.0 V – P_4.1.5 Voltage between VS and IS pin VS -VIS -0.3 – 40 V – P_4.1.6 Voltage at IS pin VIS -20 – 40 V – P_4.1.7 Voltage transient between VS and GND pin2) 2) “Under Voltage Shut Down ” shall not be triggered. dVS -1 – 1 V Transient fall/rise time: ttrans > 85 ns. P_4.1.8 Currents HS/LS continuous drain current ID(HS) ID(LS) -50 – 50 A switch active P_4.1.9 HS/LS pulsed drain current3) 3) Maximum reachable current may be smalle r depending on current limitation level. ID(HS) ID(LS) -117 – 117 A tpulse = 10 ms single pulse P_4.1.10 Temperatures Junction temperature Tj -40 – 150 °C – P_4.1.11 Storage temperature Tstg -55 – 150 °C – P_4.1.12 ESD susceptibility ESD resistivity HBM IN, INH, SR, IS OUT, GND, VS V ESD kV HBM 4) 4) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF). P_4.1.13

Data Sheet 7 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T General product characteristics Note: Integrated protection function s are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.

4.2 Functional range

The parameters of the functional range are listed in the following table: Note: Within the functional or operatin g range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table.

4.3 Thermal resistance

This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org Table 3 Functional range Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Supply voltage range for normal operation VS(nor) 8–4 0 V Tj ≥ 25°C P_4.2.1 8–3 8 V Tj < 25°C Junction temperature Tj -40 – 150 °C – P_4.2.2 Table 4 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Thermal resistance Junction-case, high-side switch R thjc(HS) = ΔTj(HS)/ Pv(HS) RthJC(HS) – 0.55 0.8 K/W 1) 1) Not subject to production test, specified by design. P_4.3.1 Thermal resistance Junction-case, low-side switch Rthjc(LS) = ΔTj(LS)/ Pv(LS) RthJC(LS) –1 . 1 1 . 6 K / W 1) P_4.3.2 Thermal resistance Junction-ambient RthJA –1 9 –K / W 1) 2) 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. P_4.3.3

Data Sheet 8 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5 Block description and characteristics

5.1 Supply characteristics

Figure 4 Typical quiescent current vs. junction temperature Table 5 Supply characteristics VS = 24 V, Tj = 25 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. General Supply current IVS(on) –2 . 3 2 . 8 m A VINH = 5 V VIN = 0V o r 5V RSR = 0 Ω DC-mode normal operation (no fault condition) P_5.1.1 Quiescent current IVS(off) –71 0 µ A VINH = 0 V VIN = 0V o r 5V 1) 1) Not subject to production test, specified by design. P_5.1.2 -40 -20 0 20 40 60 80 100 120 140 160 IVS(off) [µA] T [°C] VS = 8 V VS = 18 V VS = 24 V VS = 36 V

Data Sheet 9 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.2 Power stages

The power stages of the IFX007T consis t of a p-channel vertical DMOS tran sistor for the high-side switch and an n-channel vertical DMOS transistor for the low-si de switch. All protection and diagnostic functions are located in a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation during PWM control. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 5 and Figure 6. Figure 5 Typical ON-state re sistance vs. supply voltage 8 1 21 62 02 42 83 23 64 0 RON(HS) [mΩ] VS [V] Tj = -40°C Tj = 25°C Tj = 150°C High Side Switch 8 1 21 62 02 42 83 23 64 0 RON(LS) [mΩ] VS [V] Tj = -40°C Tj = 25°C Tj = 150°C Low Side Switch

Data Sheet 10 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics Figure 6 Typical ON-state resist ance vs. junction temperature; VS = 13.5 V; ID = 9 A

5.2.1 Power stages - static characteristics

Table 6 Power stages - static characteristics VS = 24 V, Tj = 25 °C, all voltages with respec t to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. High-side switch - static characteristics ON state high-side resistance R Leakage current high side IL(LKHS) –– 1 µ A VINH = 0 V; VOUT = 0 V P_5.2.2 Reverse diode forward-voltage high side1) 1) Due to active freewheeling, diode is co nducting only for a few µs, depending on RSR. VDS(HS) –0 . 8 0 . 9 V IOUT = -9 A P_5.2.3 Low-side switch - static characteristics Leakage current low side IL(LKLS) –– 1 µ A VINH = 0 V; VOUT = VS P_5.2.5 Reverse diode forward-voltage low side -VDS(LS) –0 . 8 0 . 9 V IOUT = 9 A P_5.2.6 -50 -25 0 25 50 75 100 125 150 RON(HS) [mΩ] Tj [°C] High Side Switch typ.typ. 98 % -50 -25 0 25 50 75 100 125 150 RON(LS) [mΩ] Tj [°C] Low Side Switch typ. typ. 98 %

Data Sheet 11 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.2.2 Switching times

Figure 7 Definition of sw itching times high side (Rload to GND) Figure 8 Definition of switching times low side (Rload to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas:

ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). IN VOUT t t ΔVOUT tdr(HS) tr(H S) tdf(HS) tf(HS) ΔVOUT 20% 20% 80%80% IN VOUT t t ΔVOUT tdf( LS) tf(LS) ΔVOUT tdr(LS) tr(L S) 20% 20% 80%80%

Data Sheet 12 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.2.3 Power stages - dy namic characteristics

The slew rate resistor at the SR-pin shall not exceed the max. slew rate resistor value of RSR ≤ 51 kΩ.

5.3 Protection functions

The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions ar e not to be used for continuous or repeti tive operation, with the exception of the current limitation (Chapter 5.3.3). In case of overtemperature the IFX007T will apply the slew rate determined by the connected slew rate resistor. In current limitati on mode the highest slew rate possible will be applied independent of the connected slew ra te resistor. Overtemperature and ov ercurrent are indicated by a fault current IIS(LIM) at the IS pin as described in the paragraph “Status flag diagnosi s with current sense capability” on Page 16 and Figure 12.

5.3.1 Undervoltage shutdown

To avoid uncontrolled motion of the driven motor at lo w voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). Table 7 Power stages - dynamic characteristics VS = 24 V, Tj = 25 °C, Rload = 4 Ω, single pulse, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. High-side switch dynamic characteristics Rise-time of HS tr(HS) 0.05 0.22 0.25 1.3 0.75 4.7 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.7 Switch-ON delay time HS tdr(HS) 1.5 3.4 4.6 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.8 Fall-time of HS tf(HS) 0.05 0.22 0.25 1.3 0.7 4.5 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.9 Switch-OFF delay time HS tdf(HS) 0.8 1.1 2.4 4.1 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.10 Low-side switch dynamic characteristics Rise-time of LS tr(LS) 0.05 0.22 0.25 1.3 0.7 4.5 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.11 Switch-OFF delay time LS tdr(LS) 0.2 1.5 2.5 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.12 Fall-time of LS tf(LS) 0.025 0.18 0.25 1.3 0.7 4.5 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.13 Switch-ON delay time LS tdf(LS) 1.6 2.0 4.2 5.9 µs RSR = 0 Ω RSR = 51 kΩ P_5.2.14

Data Sheet 13 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.3.2 Overtemperature protection

The IFX007T is protected against overtemperature by an integrated temperatur e sensor. Overtemperature leads to a shutdown of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temp erature has decreased at least the thermal hysteresis ΔT in the meantime. Repetitive use of the overtemperature protection impacts lifetime.

5.3.3 Current limitation

The current in the bridge is measured in both switches . As soon as the current in forward direction in one switch (high side or low si de) is reaching the limit ICLx, this switch is deactiva ted and the other switch is activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppre ssed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10. Figure 9 Timing diagram curren t limitation (inductive load) IL t ICLx tCLS ICLx0

Data Sheet 15 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics for a short time without exceeding the maximum allowed junction temper ature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.

5.3.4 Short circuit protection

The device provides embedded protection functions against

output short circuit to ground
output short circuit to supply voltage
s h o r t c i r c u i t o f l o a d The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shutdown of the device.

5.3.5 Electrical characteristics - protection functions

Table 8 Electrical characteristics - protection functions VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Undervoltage shutdown Switch-ON voltage VUV(ON) ––5 . 0 V VS increasing P_5.3.1 Switch-OFF voltage1) 1) With decreasing Vs < 5.5 V activation of the current limitation mode may occur before undervoltage shutdown. VUV(OFF) 3.3 – 4.7 V VS decreasing, INH = 1 P_5.3.2 ON/OFF hysteresis VUV(HY) –0 . 3 –V 2) 2) Not subject to production test, specified by design. P_5.3.3 Current limitation Current limitation detection level HS/LS I CLH0 ICLL0 55 77 98 A VS = 13.5 V P_5.3.4 Current limitation timing Shut OFF time for HS and LS tCLS 70 115 210 µs 2) P_5.3.5 Thermal shutdown Thermal shutdown junction temperature T jSD 155 175 200 °C – P_5.3.6 Thermal switch-ON junction temperature TjSO 150 – 190 °C – P_5.3.7 Thermal hysteresis DT –7–K 2) P_5.3.8 Reset pulse at INH Pin (INH low) treset 4––µ s 2) P_5.3.9

Data Sheet 16 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.4 Control and diagnostics

5.4.1 Input circuit

The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSF ETs. Setting the INH pin to high en ables the device. In this condition one of the two power switches is switched on dependin g on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The IFX007T can be interfaced directly to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.

5.4.2 Dead time generation

In bridge applications it has to be assured that the high-side and low-si de MOSFET are not conducting at the same time, connecting directly the ba ttery voltage to GND. This is assu red by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate.

5.4.3 Adjustable slew rate

In order to optimize electromagnetic emission, the switching speed of the MOSF ETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND.

5.4.4 Status flag diagnosis with current sense capability

The sense pin IS is used as a combined current sense and error flag output. In normal operation (current sense mo de), a current source is connected to the status pin, which delivers a current proportional to the forward load current flowing throug h the active high-side switch. The sense current can be calculated out of the load current by the following equation: (5.1) The other way around, the load current can be calculated out of the sense current by following equation: (5.2) The differential current sense ratio dkilis is defined by: (5.3) If the high side drain current is zero (ISD(HS) = 0A) the offset current IIS = IIS(offset) still will be driven. The external resistor RIS determines the voltage per IS output cu rrent. The voltage can be calculated by VIS = RIS . IIS. In case of a fault condition the status output is connected to a current source which is independent of the load current and provides IIS(lim). The maximum voltage at the IS pin is de termined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. IIS dkILIS IL dkILIS IIS IIS offset()–()⋅= dkILIS IL2 IL1– IIS IL2() IIS IL1()–

Data Sheet 18 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics

5.4.5 Truth table

5.4.6 Electrical characteristics - control and diagnostics

Device State Inputs Outputs Mode INH IN HSS LSS IS Normal operation 0 X OFF OFF 0 Stand-by mode

10 O F F O N IIS(offset) LSS active

Undervoltage (UV) X X OFF OFF 0 UV lockout, reset Overtemperature (OT) or short circuit of HSS or LSS

0 X OFF OFF 0 Stand-by mode, reset of latch

1 X OFF OFF 1 Shutdown with latch, error detected

overcurrent (OC) 1 1 OFF ON 1 Switched mode, error detected 1) 1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.3) 1 0 ON OFF 1 Switched mode, error detected 1) Table 10 Inputs Switches Current sense / status flag IS 0 = Logic LOW OFF = switched off IIS(offset) = Current sense - Offset (for conditions see table: Current sense) 1 = Logic HIGH ON = switched on CS = Current sense - high side (for conditions see table: Current sense) X = 0 or 1 1 = Logic HIGH (error) 0 = No output Table 11 Electrical characteristics - control and diagnostics VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Control inputs (IN and INH) High level voltage INH, IN VINH(H) VIN(H) Low level voltage INH, IN VINH(L) VIN(L) Input voltage hysteresis VINHHY VINHY Input current high level IINH(H) IIN(H) 15 30 100 µA VIN = VINH = 5.3 V P_5.4.4

Data Sheet 19 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics Figure 14 Typical current sense offset current Input current low level IINH(L) IIN(L) 15 25 50 µA VIN = VINH = 0.4 V P_5.4.5 Current sense Differential current sense ratio in static on-condition dkILIS = dIL / dIIS dkILIS 15 19.5 24 10 3 VS = 13.5 V RIS = 1 kΩ IL1 = 10 A IL2 = 40 A P_5.4.6 Maximum analog sense current, Sense current in fault condition IIS(lim) 4.1 5 6.1 mA VS = 13.5 V RIS = 1 kΩ P_5.4.7 Isense leakage current IISL ––1 µ A VINH = 0 V P_5.4.8 Isense offset current IIS(offset) 30 170 385 µA VINH = 5 V ISD(HS) = 0 A P_5.4.9 1) Not subject to production test, specified by design. Table 11 Electrical characteristics - control and diagnostics (cont’d) VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 8 1 21 62 02 42 83 23 64 0 IIS(offset) [mA] VS [V] Tj = -40°C Tj = 25°C Tj = 150°C 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 0.28 0.30 - 4 0 - 2 00 2 04 06 08 0 1 0 0 1 2 0 1 4 0 IIS(offset) [mA] T [°C]

Data Sheet 20 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Block description and characteristics Figure 15 Typical characteristic of the maximum analog sense current in fault condition (Pos. 5.4.7.) 3.5 4.0 4.5 5.0 5.5 6.0 8 1 21 62 02 42 83 23 64 0 IIS(lim) [mA] VS [V] Tj = -40°C Tj = 25°C Tj = 150°C

Data Sheet 21 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T

Application information

6 Application information

Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.

6.1 Application circuit

Figure 16 Application circuit: H-bridge with two IFX007T Note: This is a simplified example of an application ci rcuit. The function must be verified in the real application.

6.2 Layout considerations

Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge de sign as it is necessary in all switched high power bridges. The IFX007T has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the device (GND / pin 1) is minimized. If the IFX007T is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10 from VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both PWM and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must be low. Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must be verified in the real application, taking care for low ripple and transients at the Vs pin of the IFX007T. The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors greater than 7 kΩ. optiona l M Voltage Regulator I/O Res et Vdd Vss WO RO Q D GND I C19 100 nF C10 1000 µFR11 10 kΩ R12 10 kΩ R111 0.. 5 1kΩ R112 1kΩ I/OI/O C1O2V 220 nF C1OU T 220 nF C2O2V 220 n F C2OU T 220 n F C29 100 nF R211 0. . 51kΩ I/OA/ D R22 10 kΩ R21 10kΩ R212 1kΩ A/D INH IN IS SR IFX007T VS OUT GND INH IN IS SR IFX007T VS OUT GND VS Reverse Polarity Protection (IPD 90P03P4L-04) 10kΩ DZ1 10 V 100 nF C22 100 nF C2IS 1nF C1I S 1nF C12 100 nF Microcontroller

Data Sheet 22 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Figure 17 Application circuit: half -bridge with a IFX007T (load to GND) Note: This is a simplified example of an application ci rcuit. The function must be verified in the real application.

6.3 PWM control

For the selection of the max. PWM frequency the choosen rise/fall-time and the requirements on the duty cycle have to be taken into account. We recommend a PWM-period at least 10 times the rise-time. Example: Rise-time = fall-time = 4 µs. => T-PWM = 10 * 4 µs = 40 µs. => f-PWM = 25 kHz. The min. and max. value of the duty cycle (PWM ON to OFF percentage) is determined by the real fall time plus the real rise time. In this example a duty cycle make sense from approximately 20% to 80%. If a wider duty cycle range is need ed, the PWM frequency could be decreased and/or the rise/fall-time could be accelerated. M Micro- controller Voltage Regulator VS I/ O Res et Vdd Vss WO RO Q D GND I Reverse Polarity Protection (IPD 90P03P4L-04) 100 nF C10 1000 µF 10 kΩ DZ1 10 V 10 kΩ 10 kΩ R11 0 ..5 1 kΩ R12 1kΩ I/OI/OI/O CIS 1nF CO2 V 220 nF 100 nF COUT 220 n F 100 n F INH IN IS SR VS OUT GND IFX007T

Data Sheet 23 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T Package Outlines

7 Package Outlines

Figure 18 PG-TO263-7-1 (Plastic Gr een Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for en vironmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). A BA0.25 M 0.1 Typical ±0.210 8.5 1) 7.551) (15) ±0.29.25 ±0.31 0...0.15 7 x 0.6 ±0.1 ±0.1 GPT09114 1.27 4.4 B 0.5±0.1 ±0.32.7 4.7±0.5 0.05 0.1 Metal surface min. X = 7.25, Y = 6.9 2.4 1.27 All metal surfaces tin plated, except area of cut. 0...0.3 B 6 x 8˚ MAX. 8.42 10.8 9.4 16.15 4.6 0.47 0.8 For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm

Data Sheet 24 Rev. 1.0 2018-09-11 High Current PN Half Bridge with Integrated Driver IFX007T

Revision History

8 Revision History

Rev. 1.0 Data Sheet Initial release.

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81726 Munich, Germany

Summary

High Current PN Half Bridge with Integrated Driver Rev. 1.0 2018-09-11

Description

High Current PN Half Bridge with Integrated Driver Rev. 1.0 2018-09-11

Source title IFX007T Datasheet(PDF) - Infineon Technologies AG

Read IFX007T online.

IFX007T INFINEON | Alldatasheet

Document overview

Technical content

Features

Description

2 Block diagram

2.1 Block diagram

2.2 Terms

3 Pin configuration

3.1 Pin assignment

3.2 Pin definitions and functions

3 INH I Inhibit

6 IS O Current Sense and Diagnostics

7 VS – Supply

4 General product characteristics

4.1 Absolute maximum ratings

4.2 Functional range

4.3 Thermal resistance

5 Block description and characteristics

5.1 Supply characteristics

5.2 Power stages

5.2.1 Power stages - static characteristics

5.2.2 Switching times

5.2.3 Power stages - dy namic characteristics

5.3 Protection functions

5.3.1 Undervoltage shutdown

5.3.2 Overtemperature protection

5.3.3 Current limitation

5.3.4 Short circuit protection

5.3.5 Electrical characteristics - protection functions

5.4 Control and diagnostics

5.4.1 Input circuit

5.4.2 Dead time generation

5.4.3 Adjustable slew rate

5.4.4 Status flag diagnosis with current sense capability

5.4.5 Truth table

5.4.6 Electrical characteristics - control and diagnostics

10 O F F O N IIS(offset) LSS active

0 X OFF OFF 0 Stand-by mode, reset of latch

1 X OFF OFF 1 Shutdown with latch, error detected

Application information

6 Application information

6.1 Application circuit

6.2 Layout considerations

6.3 PWM control

7 Package Outlines

Revision History

8 Revision History

81726 Munich, Germany

IFX007T specifications and overview.

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