IFF2400P17AE440989 INFINEON | Alldatasheet

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  • Integrated current, voltage and temperature measurement - Tvjop max=150°C - Real time Tvj simulation - IGBT4 technology - Smart protection - TIM and pressfit technology - Modbus interface - 100% tested IPM - ROHS compliant - Integrated chip current : 2400A - Integrated chio voltage: 1700V Topology half bridge Application Energy Storage, Smart Grid, Wind, Drives, Solar Heatsink air cooled Implemented sensors voltage, current, temperature Driver signals IGBT +15V Approvals UL61800-5-1 Sales - name IFF2400P17AE440989

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata Absolutemaximumratedvalues Collector-emitter voltage IGBT; Tvj = 25°C VCES 1700 V Repetitive peak reverse voltage Diode; Tvj = 25°C VRRM 1700 V DC link voltage VDC 1450 V Peak switching current Ipeak 4000 A Insulation test voltage f = 50 Hz, t = 60 s VISOL 3.4 kVRMS Junction temperature under switching conditions Tvjop 150 °C Operational ambient temperature min. Tamb -40 °C Switching frequency operation values fsw2 10 kHz Notes Characteristicvalues Operationvalues min. typ. max. Rated continuous current VDC = 1100 V, VAC = 690 VRMS, cos(ϕ) = 0.85, fAC sine = 50 Hz, fsw = 3000 Hz, Tinlet = 25°C, Tj ≤ 150 °C IAC 650 ARMS Power losses IAC = 650 A, VDC = 1100 V, VAC = 690 VRMS, cos(ϕ) = 0.85, fAC sine = 50 Hz, fsw = 3000 Hz, Tinlet = 25 °C, Tj ≤ 150 °C Ploss 4000 W Controllerinterface min. typ. max. Auxiliary voltage Vaux 19.2 24 28.3 V Auxiliary power requirement Vaux = 24 V Paux 48 W Digital input level Vin low 2 V Vin high 8.5 16 V Digital output level max. 1 mA Vout low 2 V Vout high 13.5 15 16.5 V Interlock time default value tinterlock 4 µs Propagation delay for PWM default value tprop 4 µs Analog output for phase current for 650 A VIac ana 1.54 V Over current shut down default value, response time 15 µs Iac trip 4200 A Analog DC link voltage sensor output load max 5 mA, @ 1100 V VDC ana 7.86 V Over voltage shut down default value, response time 500 µs Vdc trip 1340 V Chip over temperature shut down default value, response time 1000 µs Tvj trip 150 °C Analog ouput for junction temperature for 150°C VTvj ana 10 V PCB ambient over temperature shut down default value, response time 1 s Tpcb err 85 °C Serial BUS Modbus, RS485 19200 Bit/s

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata Systemdata min. typ. max. EMC robustness according to IEC61800 at named interfaces VBurst 2 kVpower VBurst 2 kVcontrol Storage temperature Tstor -40 85 °C Operational ambient temperature Top amb -40 65 °C Stray inductance LS 8.5 nH Lead resistance RCC EE 1.2 mΩ Impuls test voltage Power to logic side, acc .IEC 61800-5-1 12 kV Isolation test voltage RMS, f = 50 Hz, t = 60 s VISOL 3.4 kV Creepage distance Power side to heatsink across housing 13 mm Clearance Power side to heatsink 8 mm Protection degree IP00 Pollution degree 2 Dimensions width x depth x height 215 338 166 mm Weight 11.5 kg Notes Partical discharge test, power side to logic side, according to IEC 61800-5-1, TE > 1920V Housing CTI > 175 Heatsinkaircooled min. typ. max. Air flow Tair = 25 °C, Pair = 0.055 hPa, dry and dust free, measured at the side of the heat sink ΔV/Δt 550 m³/h Air inlet temperature Tinlet 40 °C

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata output characteristic IGBT/Diode Tvj = 150°C Vce/Vf[V] Ic [A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 4400 4800 Vce sat Vf switching losses, Eon, Eoff, Erec Vdc 1100V, T vj = 150°C Ic [A] Looses [mJ] 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 6000 E on E off E rec safe operating area DC link voltage [V] Ic [A] 200 400 600 800 1000 1200 1400 500 1000 1500 2000 2500 3000 3500 4000 4500 Pressure drop vs. flow rate T inlet = 25°C Flow rate [l/min] Pressure drop [Pa] 100 200 300 400 500 600 700 100 200 300 400 500 600 700

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata Thermal resistence vs. Flow rate T inlet=25°C Flowrate [l/min] Rthj [K/W] 300 350 400 450 500 550 100 110 120 Rthja Diode-Diode Rthja IGBT-IGBT Rthja IGBT-Diode Rthja Diode-IGBT

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata thermal impedance Tinlet =25°C, Air flow rate= 550m3/h t [s] Rth [K/W] 0.001 0.01 0.1 100 1000 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 ri[K/W]: τi[s]: 0.0045 0.014 0.01125 0.102 0.0084 0.638 0.00975 3.11 0.01473 30.44 0.0235 Rthja Diode - Diode ri[K/W]: τi[s]: -0.00052 0.172 0.00429 0.942 0.00628 3.525 0.00458 22.34 0.0263 51.9 0.00825 125 Rthja IGBT - Diode ri[K/W]: τi[s]: -0.00059 0.164 0.00523 1.165 0.00694 3.71 0.00185 19.85 0.01666 39.7 0.01842 81.6 Rthja Diode-IGBT ri[K/W]: τi[s]: 0.005 0.026 0.0047 0.2 0.0072 0.848 0.0083 3.525 0.0164 35.58 0.0204 80.37 Rthja IGBT-IGBT

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata Mechanicaldrawing

preparedby:OW approvedby:YZ dateofpublication:2017-11-22 revision:2.1 Preliminarydata Circuitdiagram

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