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Technical content
Features
Reverse conducting IGBT with monolithic body diode designed for soft commutation Integrated Driver with o Over-voltage and over-current protection o Active clamp control circuit o Programmable over-voltage threshold o Programmable cycle-by-cycle over-current threshold o Integrated gate drive with 2 level turn-on current o Temperature warning o Over-temperature protection o VCC UVLO o Integrated ESD protection and latch immunity on all pins Qualified forindustrial applications according to the relevant tests of JEDEC47/20/22 PG-TO247-6 package http://www.infineon.com/IPD-Protect
Applications
Induction cooking
Description
The IPD (Integrated Power Device) P rotect includes an IGBT with Gate Driver IC in a TO247 6-pin package for induction cooking applications . Its innovative concepts provide protection against over -voltage, over-current, and over-temperature. Additional features include a unique active clamp control, fault condition notification, and a special two levels turn -on Gate driving that reduces significantly the typical high startup peak current. These integrated protection functions provide a si mple and robust solution with increased overall system reliability.
1 C Collector
2 E/COM Emitter/Ground
3 VCC Supply
4 CS Current Sense
5 INN PWM Input
6 VDET Voltage Sense
2 Revision 2.3 2020-05-27 Table of Contents IEWS20R5135IPB IGBT 20A/1350V RC-H5 technology with driver IC Protecting Driver INN E/COM GND VRECT+ C VCC COM VDET 13..18V PWM GND CS Figure 1 Typical Application Table of Contents Features 1 Description 1
3 Revision 2.3 2020-05-27 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Block Diagram
1 Block Diagram
VIL, VIH VCC VDET VDET1+, VDET2+ VRST- Logic Active Clamp Control Gate- Drive Temperature Control VCC CS VCSTH- Over-Voltage Timer VCC UVLO VClamp C E/COM GND Figure 2 Block Diagram of IEWS20R5135IPB
4 Revision 2.3 2020-05-27 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC State Diagram
2 State Diagram
IQCC < ICCUV OUT = Off VCC > VCCUV+ and Tvj<TjRST and VDET<VRST- Power Off VDET Over-Voltage Mode INN Disabled VDET Enabed ACC controlls OUT Start OV-Timer OVT > TOVT and VDET < VRST- RUN Mode INN=lowOUT=ON INN=highOUT=OFF CS Enabled VDET Enabled CS>VCSTH- VCC > 0V CS Over-Current Mode OUT = Off VDET Enabled INN=high VCC < VCCUV- or Tvj > TjSD VCC < VCCUV- or Tvj > TjSD VCC < VCCUV- or Tvj > TjSD VDET > VDET+1 VDET > VDET+1 VRST-Mode OUT=Off VDET Enabled VDET > VRST- VDET < VRST- VDET > VDET+1 Figure 3 State diagram of IEWS20R5135IPB
5 Revision 2.3 2020-05-27 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver
3 Electrical Parameters Driver
3.1 Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any pin. Table 1 Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Test Conditions VDET pin voltage VDET -0.3 VCLAMP 1 V VCC pin voltage VCC CS pin voltage CS INN pin voltage INN -0.3 5 V Junction temperature Tvj -40 150 °C Storage temperature TS ESD capability VESD 750 V Charged Devices Model (CDM) 2 ESD capability VESD 2.0 KV Human Body Model (HBM) 3
3.2 Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. (TA=25°C) Table 2 Recommended Operating Conditions Parameter Symbol Min. Max. Unit VDET pin voltage VDET -0.3 20 V VCC pin voltage VCC CS pin voltage CS INN pin voltage INN -0.3 5 V Junction temperature Tvj -40 125 °C 1 This IC contains a 25V voltage clamp structure between the VCC and COM pins. Please note that this pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.
2 According to the JESD22-C101 CDM standard
3 According to the JESD22-A114 Rev. F standard
6 Revision 2.3 2020-05-27 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver
3.3 Electrical Characteristics
VCC=15.0V, TA = 25 °C unless otherwise specified. All parameters are referenced to COM. Table 3 VCC Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions VCC rising UVLO threshold VCCUV+ 13.0 13.5 14.0 V VCC falling UVLO threshold VCCUV- 12.0 12.5 13.0 VCC supply current during UVLO ICCUV --- 200 --- µA VCC=VCCUV- -0.5V VCC quiescent supply current IQCC --- 3000 --- VCC internal Zener clamp voltage VCLAMP --- 25 --- V ICC=5mA Table 4 CS Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Over-current threshold voltage VCSTH- -5% -0.2 +5% V Over-current detection internal blank time tCSBLK 3.5 --- 4.5 µs Over-current detection propagation delay tCS --- 50 --- ns Table 5 VDET Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Over-voltage rising threshold voltage 1 VDET+1 -3% 3.91 +3% V Figure 8 Figure 9 Over-voltage rising threshold voltage 2 VDET+2 -3% 4.36 +3% Restart falling threshold voltage VRST- -3% 1.37 +3% Over-voltage clamping time 1 tclamp1 4.25 5.0 5.75 µs Over-voltage blank timer tOVT 3 --- --- ms Over-voltage blanking time @ turn-off IGBT tVDETBLK --- 1200 --- ns Table 6 Temperature Warning / Shutdown Parameter Symbol Min. Typ. Max. Unit Test Conditions Junction temperature warning TvjTW --- 75 --- Junction temperature thermal shutdown TvjSD --- 150 --- Junction temperature thermal reset TvjRST --- 75 ---
7 Revision 2.3 2020-05-27 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver Table 7 INN / OUT Characteristics Parameter Symbol Min. Typ Max. Unit Test Conditions Logic “0” input voltage (OUT = HI) VIL --- --- 0.8 V Figure C Logic “1” input voltage (OUT = LO) VIH 2.0 --- --- INN pullup-voltage no fault VIPUnf 2.10 2.50 2.90 INN pullup-voltage temp warning VIPUtw 4.00 4.50 5.00 INN voltage over-voltage detection or over-temp shut-down VIPUov --- --- 0.5 Turn-on filter time tONfilter 340 400 460 ns Turn-off filter time tOFFfilter 1275 1700 2200 Logic “0” input bias current IIN- --- -500 --- µA VNN=0V
8 Revision 2.2 2020-01-22 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver
4 Electrical Parameters IGBT
4.1 Absolute Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in the datasheet. Table 8 Absolute Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tvj ≥ 25°C VCE 1350 V DC collector current, limited by Tvjmax TC = 25C TC = 100C IC 40.0 20.0 A Pulsed collector current, tp limited by Tvjmax IC p u l s 60 A Turn off safe operating area (VCE 1350V, Tvj 175C, tp=1µs) - 60 A Diode forward current, limited by Tvjmax TC = 25C TC = 100C IF 40.0 20.0 A Diode pulsed current, tp limited by Tvjmax IF p u l s 60.0 A Gate-emitter voltage Transient Gate-emitter voltage (tp≤10µs, D<0.010) VGE 20 ±25 V Power dissipation TC = 25C Power dissipation TC = 100C Pt o t 288.0 144.0 W Virtual junction temperature Tvj -40...+175 °C Operating junction temperature 1 Tv j , o p -40...+150 °C Storage temperature Ts t g -40...+150 °C Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ESD capability Charged Devices Model (CDM) 2 VESD 750 V ESD capability Human Body Model (HBM) 3 VESD 2.0 KV Table 9 Thermal Resistance Parameter Symbol Value Unit IGBT thermal resistance, junction – case Rth (j - c) 0.52 K/W Diode thermal resistance, junction – case Rth (j - c) 0.52 K/W Thermal resistance, junction – ambient Rth ( j - a) 40 K/W 1 Limited by Tvj,max of the driver IC. 3 According to the JESD22-A114 Rev. F standard
9 Revision 2.2 2020-01-22 IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver
4.2 Electrical Characteristics
At Tvj=25°C and VCC=15V, unless otherwise specified Table 10 Static Characteristic Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage V( B R ) C E S INN =ope n , IC =0. 5mA 1350 - - V Collector-emitter saturation voltage VC E ( s a t ) VIN =0V, IC =20 A Tvj =25 C Tv j =125 C Tvj =1 50 C 1.6 5 1. 85 1.90 1. 85 Diode forward voltage VF INN =ope n IF =20 A Tv j =25 C Tvj =125 C Tv j =150 C 1. 71 1.85 1.97 1.90 Transconductance gfs VCE =20V, I C =20 A - 15.8 - S Table 11 Switching Characteristics, Inductive Load at Tvj=25°C Parameter Symbol Conditions Min. Typ. Max. Unit Turn-on propagation time tPD,on VD C =600 V, I C =20.0A INN =ope n/0V L=175nH, C =40p F L, C fromFig. F Energy losses include “tail”. - 66 8 - ns Turn-off propagation time tPD,off - 20 34 - ns Fall time tf - 83 - ns Turn-off energy Eo f f - 1.2 - mJ Turn-off energy, soft switching Eo f f , s o f t dV CE / dt = 67V/ µs From Fi g. F Energy losses include “tail”. - 0. 26 - mJ
IGBT 20A/1350V RC-H5 technology with driver IC Electrical Parameters Driver Table 12 Switching Characteristics, Inductive Load at Tvj=150°C Parameter Symbol Conditions Min. Typ. Max. Unit Turn-on propagation time tPD,on VD C =6 00 V, I C =20.0A INN =ope n/0V L=175nH, C =40p F L, C fromFig. F Energy losses include “tail”. - 705 - ns Turn-off propagation time tPD,off - 2257 - ns Fall time tf - 231 - ns Turn-off energy Eo f f - 2.2 - mJ Turn-off energy, soft switching Eo f f , s o f t dV CE / dt = 67V/ µs From Fi g. F Energy losses include “tail”. - 0.40 - mJ
IGBT 20A/1350V RC-H5 technology with driver IC Pin Configuration, Description and Functionality
5 Pin Configuration, Description and Functionality
5.1 Pin Configuration and Description
Figure 4 Pin Configuration Table 13 Pin Description Pin Symbol Description
1 C Collector of IGBT
2 E/COM Emitter of IGBT, ground connection for the driver
3 VCC Supply-voltage of the driver
4 CS Current-limitation input
5 INN PWM input (low active) / Diagnostic output
6 VDET Over-voltage dectection input
5.2 IGBT connect pins (C, E/COM)
A RC-H5 IGBT is integrated into the TO247-6pin package. The chip includes a powerful monolithic body diode for soft commutation. The TRENCHSTOPTM technology offers - Very tight parameter distribution - High ruggedness and temperature stable behavior - Low VCEsat - Low EMI
5.3 VCC and COM
VCC is the voltage supply for the logic and the driver output stage. All inputs and outputs are referenced to COM. The undervoltage lockout circuit enables the device to operate at power on when a typical supply voltage higher than VCCUV+ is present. Please see section 3.3 “VCC Characteristics” for further information. 6 1
IGBT 20A/1350V RC-H5 technology with driver IC Pin Configuration, Description and Functionality
5.4 Current limitation input (CS)
The integrated cycle by cycle current limitation, given in the next figure, offers independent of the external control and input-voltage level, a voltage limitation across the IGBT. The negative current sense threshold (VCSTH-) has the big advantage that the current sense resistor is not in the gate-drive loop. When the INN-input is switched to COM, the IGBT is turned on from the driver and the current-sense input gets enabled after a delay of tCSBLK, to avoid miss- triggering during NZVS (Non Zero Voltage Switching) conditions. Once enabled, the voltage at the CS -pin gets monitored and when the current sense threshold is reached the IGBT turns off immediately, indepen dent from the signal at the INN-input. A resistor of 1kOhm should be placed in series to the CS input to limit currents through the internal ESD-diodes due to transients. VCE time VCSTH- On Time Off Time time VRCS time INN OCP Event OCP Event Figure 5 Cycle by cycle current limitation
5.5 PWM input / Diagnostic output (INN)
The INN pin is a multifunctional pin. It acts as an input to control the ON-time of the IGBT and during the OFF-time, the diagnostic block controls the pull -up vol tage level according to the status (see Table 14 & Figure 8 ). To control the turn-on of the IGBT an open drain output should be connected to the INN pin. The Schmitt trigger input is such to guarantee compatibility down to 3.3V controller. The input Schmitt trigger and noise filter provide beneficial noise rejection to short input pulses according to Figure 6 and Figure 10.
IGBT 20A/1350V RC-H5 technology with driver IC Pin Configuration, Description and Functionality VCC Input Noise Filter Diagnostic with Pullup Control INN VIL, VIH Microcontroller ON-Time Control A/D Converter or Comparator PWM IEWS20R5135IPB Figure 6 INN internal structure Table 14 INN Diagnostic Pullup-Levels Status Pull-up Level (INN) UVLO <0,5V No Fault 2,10V – 2,90V OT-Warning 4V – 5V OV-Detection <0,5V OT-Warning + OV-Detection <0,5V (OV dominates) OT-Shut-Down <0,5V
5.6 Over-voltage detection input (VDET)
The integrated active clamp control level can be programmed on the VDET input with the resistor devider R1, R2 (Figure 7). After fixing R1, R2 can be calculated with the following equation: 𝑅2 = 𝑅1 𝑉𝑐𝑙𝑎𝑚𝑝1 𝑉𝐷𝐸𝑇+1 − 1 VClamp = programmed clamping level VDET+1 = internal VDET+1 threshold When the voltage at VDET goes above the internal threshold of V DET1+ , the Active Clamp Control (ACC) takes over and turns on the IGBT in order to regulate the voltage at VDET to V DET+1 and therefore the collector voltage to the programmed level V Clamp1. After the time T clamp1 the internal clamping level is increased by 11%. The ACC stay’s active until the voltage at VDET drops below VDET1+ within T clamp1 or below V DET2+ after T clamp1. A third internal threshold at V DET (VRST-) takes care, that the IGBT is not turned on at a too high voltage level. Therefore the driver stay’s disabled until the VDET voltage drops below V RST-. The re start level (V RST-) can be calculated with following equation: 𝑉𝑅𝑆𝑇 = 𝑉𝑐𝑙𝑎𝑚𝑝1 ∗ 𝑉𝑅𝑆𝑇− 𝑉𝐷𝐸𝑇+1 In normal operation the VRST- threshold is also active and blocks the turn-on of the IGBT until the VDET voltage falls below V RST-, bu t the INN is not switched to GND compared to the OV -detection mode (Table 15). If the INN is switched to GND from the control system when the VCE>VRST- the complete cycle is skipped (see Figure 9).
IGBT 20A/1350V RC-H5 technology with driver IC Pin Configuration, Description and Functionality VCE VDET+1 OUT On-Time Off-Time VRST- INN 2.5V Complete cycle is skipped Turn-on VCE>VRST- Figure 9 Function turn-on, if VCE>VRST-
IGBT 20A/1350V RC-H5 technology with driver IC Timing Diagrams
6 Timing Diagrams
a) b) tOFFfilter CS -0.2V tONfilter tOFFfilter -0.2V INN OUT CS tONfilter tOFFfilter
1 Short pulses below the filter-time are suppressed
Figure 10 Input Noise Filter INN tONfilter tOFFfilter OUT Short-Circuit Drive-Current tO1+ IO1+ IO2+ IO- Figure 11 OUT Short-Circuit Drive-Current
7 Electrical Characteristics Diagrams
Figure 12. Undervoltage Lockout Figure 13. Input Voltage Characteristic
IGBT 20A/1350V RC-H5 technology with driver IC Electrical Characteristics Diagrams CURRENT CONSUMPTION vs TEMPERATURE CURRENT CONSUMPTION vs OPERATING SUPPLY VCC CURRENT CONSUMPTION vs FREQUENCY 0.0 2.0 4.0 6.0 8.0 -50 -25 0 25 50 75 100 125 150 Current [mA] Tvj, JUNCTION TEMPERATURE [ °C] Series1 Series2 0.0 1.0 2.0 3.0 4.0 5.0 0 5 10 15 20 25 Current [mA] VCC [V] 0 25 50 75 100 Current [mA] Frequency [kHz] VCC = 15V IQCC(VCC=15V) IQCCUV(VCC=15V (INN floating) (Tvj = 25°C, INN floating) UVLO region
IGBT 20A/1350V RC-H5 technology with driver IC Test Conditions
8 Test Conditions
Figure A. Definition of switching times Figure B. Definition of switching losses VCC VCCUV+ UVLO Protection UVLO Protection Normal Operation VCCUV- INN Signal INN Logic Level VIL VIH Figure D. UVLO Protection 2% IC INN(t) IC(t) VCE(t) t t t t t CCEoff dtIVE Figure E. Thermal equivalent circuit Figure C. INN Thresholds Figure F. Dynamic test circuit INN(t) 50% 50% tPD,ON tPD,OFF 90% 10% IC(t) t t 1 For soft switching is 1% IC. VDC
IGBT 20A/1350V RC-H5 technology with driver IC Package Drawing
9 Package Drawing
IGBT 20A/1350V RC-H5 technology with driver IC Package Dimensions
9.1 Package Dimensions
IGBT 20A/1350V RC-H5 technology with driver IC
Revision History
Revision: 2020-01-22, Rev.2.2 Revision Date Subjects (major changes since last revision) 2.0 2018-06-28 Final Datasheet 2.1 28-05-2019 Revised version 2.2 22-01-2020 Product name change 2.3 24-04-2020 Correction of acronym ‘IPD’ in page 1, correction of minor typos
81726 München, Germany
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