IDW75D65D1 ISC | Alldatasheet
Document overview
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Technical content
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DESCRIPTION
- Temperaturestable behaviourof keyparameters
- Ultrafastrecovery
- LowForward Voltage
APPLICATIONS
- AC/DCconverters
- BoostdiodeinPFC stages
- Free wheelingdiodesin inverters and motordrives
- Generalpurposeinverters
- Switchmode powersupplies ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 650 V IF DiodeForwardCurrent TC=25℃ 150 A TC=100℃ 75 IFSM NonrepetitivePeakSurge Current@10ms,sinehalfwave 580 A TJ JunctionTemperature -40~175 ℃ Tstg StorageTemperatureRange -55~150 ℃
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ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR ReverseleakageCurrent VR=VRRM;TJ=25℃ - - 40 uA VR=VRRM;TJ=175℃ - 3000 - trr ReverseRecoveryTime IF=40A；VR=400V； di/dt=200A/μs - 128 - ns Product Disclaimer ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISCmakes no warrantyor guaranteeregardingthe suitabilityof itsproducts forany particularpurpose, nordoes ISCassumeany liability arisingfromthe application oruse ofany products,and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages.