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Power Management & Multimarket SiC Silicon Carbide Diode Final Datasheet Rev. 2.0, 2015-04-13 5th Generation thinQ! TM 650V SiC Schottky Diode IDW40G65C5B
1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms 3) Per Leg 4) Per Device Final Datasheet 2 Rev. 2.0, 2015-04-13
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 44 mA2) 3) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters 4) Parameter Value Unit VDC 650 V QC; VR=400V 2 x 29 nC EC; VR=400V 2 x 6.6 µJ IF @ TC < 120°C 2 x 20 A Table 2 Pin Definition Pin 1 Pin 2 Pin 3 A C A Type / ordering Code Package Marking Related links IDW40G65C5B PG-TO247-3 D4065B5 www.infineon.com/sic IDW40G65C5B 5th Generation thinQ!™ SiC Schottky Diode ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thin- wafer technology result s is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 3
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Table of contents Final Datasheet 3 Rev. 2.0, 2015-04-13 Table of Contents
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Maximum ratings 1) Per Leg 2) Per Device Final Datasheet 4 Rev. 2.0, 2015-04-13
2 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Continuous forward current 1) IF – – 20 A TC < 120°C, D=1 Surge non-repetitive forward current, sine halfwave 1) IF,SM – – 103 TC = 25°C, tp=10 ms – – 87 TC = 150°C, tp=10 ms Non-repetitive peak forward current 1) IF,max – – 776 TC = 25°C, tp=10 µs i²t value 1) ∫ i²dt – – 53 A²s TC = 25°C, tp=10 ms – – 38 TC = 150°C, tp=10 ms Repetitive peak reverse voltage VRRM – – 650 V Tj = 25°C Diode dv/dt ruggedness dv/dt – – 100 V/ns VR=0..480 V Power dissipation 1) Ptot – – 112 W TC = 25°C Operating and storage temperature Tj;Tstg -55 – 175 °C Mounting torque – – 60 Ncm M3 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3 Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case 1) RthJC – 1.0 1.3 K/W Thermal resistance, junction-ambient 1) RthJA – – 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold – – 260 °C 1.6mm (0.063 in.) from case for 10 s
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B
Electrical characteristics
1) Per Leg 2) Per Device Final Datasheet 5 Rev. 2.0, 2015-04-13
4 Electrical characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. DC blocking voltage VDC 650 – – V Tj=25°C Diode forward voltage VF – 1.5 1.7 IF= 20 A, Tj=25°C – 1.8 2.1 IF= 20 A, Tj=150°C Reverse current 1) IR – 1.1 210 µA VR=650 V, Tj=25°C – 0.3 75 VR=600 V, Tj=25°C – 4.1 1450 VR=650 V, Tj=150°C Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge 1) Qc – 29 nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C Total Capacitance 1) C – 590 – pF VR=1 V, f=1 MHz – 76 – VR=300 V, f=1 MHz – 74 – VR=600 V, f=1 MHz
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams 1) Per Leg 2) Per Device Final Datasheet 6 Rev. 2.0, 2015-04-13
5 Electrical characteristics diagrams
Power dissipation 1) Maximal diode forward current 1) 100 120 25 50 75 100 125 150 175 Ptot[W] TC[°C] 100 120 140 160 25 50 75 100 125 150 175 IF[A] TC[°C] 0.1 0.3 0.5 0.7 Ptot=f(TC); RthJC,max IF=f(TC); RthJC,max;Tj≤175°C; parameter D=duty cycle Table 8 Typical forward characteristics 1) Typical forward characteristics in surge current 1) 0 1 2 3 IF [A] VF [V] 100 120 140 160 180 200 0 1 2 3 4 5 6 IF [A] VF [V] IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj -55°C 175°C 150°C 25°C 100°C -55°C 175°C 150°C 25°C 100°C
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams 1) Per Leg 2) Per Device Final Datasheet 7 Rev. 2.0, 2015-04-13 Table 9 Typ. capacitance charge vs. current slope 1) Typ. Reverse current vs. reverse voltage 1) 100 300 500 700 900 QC[nC] dIF/dt [A/µs] 1.E-9 1.E-8 1.E-7 1.E-6 1.E-5 1.E-4 100 200 300 400 500 600 IR [A] VR [V] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj Table 10 Max. transient thermal impedance 1) Typ. capacitance vs. reverse voltage 1) 0.01 0.1 Zth,jc [K/W] tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 100 200 300 400 500 600 700 800 0 1 10 100 1000 C [pF] VR [V] Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz -55°C 175°C 150°C 25°C 100°C
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B Electrical characteristics diagrams 1) Per Leg 2) Per Device Final Datasheet 8 Rev. 2.0, 2015-04-13 Table 11 Typ. capacitance stored energy 1) 0 200 400 600 EC [µJ] VR [V] EC=f(VR)
6 Simplified Forward Characteristics Model
Equivalent forward current curve 1) Mathematical Equation IF [A] VF [V] VF=f(IF) Tj in °C; -55°C < Tj < 175°C; IF < 40 A 1/Rdiff Vth 0.02310.4610.46 V 04.1001.0 5-27- jjjDIFF jjTH TTTR TTV FDIFFTHF IRVV
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B 1) Per Leg 2) Per Device Final Datasheet 9 Rev. 2.0, 2015-04-13
7 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
5th Generation thinQ!TM SiC Schottky Diode IDW40G65C5B
Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2015-04-13 Published by Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guaran tee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologi es, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Datasheet 10 Rev. 2.0, 2015-04-13
8 Revision History
5th Generation thinQ!TM SiC Schottky Diode Revision History: 2015-04-13, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of the final datasheet.
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