IDW40G65C5B ISC | Alldatasheet
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Technical content
SiliconCarbideSchottkyDiode www.iscsemi.com
FEATURES
- Revolutionary semiconductormaterial -SiliconCarbide
- High surgecurrentcapability
- Optimized forhigh temperature operation
- Benchmarkswitchingbehavior
- Noreverse recovery
APPLICATIONS
- Solarinverter
- Power factorcorrection
- Switchmode powersupply ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 650 V IF ContinuousForwardCurrent TC<120°C 20*2 A IFSM Non-RepetitiveForwardSurgeCurrent PerLeg TC=25°C,tp=10ms,Sinehalfwave 103 A TC=150°C,tp=10ms,Sinehalfwave 87 IF,max Non-repetitivepeakforwardcurrent PerLeg TC=25°C,Tp=10us,Sinehalfwave 776 A Ptot PowerDissipation Tc=25°C 112 W TJ JunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.3 ℃/W
SiliconCarbideSchottkyDiode www.iscsemi.com ELECTRICALCHARACTERISTICSPERDIODE SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR Reversecurrent VR=650V;TJ=25℃ - 6 100 uA QC TotalCapacitiveCharge VR=400V - 62 - nC C TotalCapacitance，f=1MHZ VR=1V,f=1MHz - 905 - pFVR=200V,f=1MHz - 121 - VR=400V,f=1MHz - 117 - EC Capacitance Stored Energy VR=400V - 6.6 - uJ PACKAGEOUTLINE(UNIT:mm): TO-247
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