IDW40G120C5B INFINEON | Alldatasheet
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Technical content
Silicon Carbide Schottky Diode Final Datasheet Rev. 2.0 2014-06-10 IDW40G 120C5 B 5th Generation thinQ!™ 1200 V SiC Schottky Diode
1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic
Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 – anode 1 Pin 2 and backside – cathode Pin 3 – anode 2 Key Performance and Package Parameters (leg/device) Type VDC IF QC Tj,max Marking Package IDW40G120C5B 1200V 20 / 40 A 101 / 202nC 175°C D4012B5 PG-TO247-3 CASE
Final Data Sheet 3 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B Table of Contents
Final Data Sheet 4 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B Maximum ratings Parameter Symbol Value (leg/device) Unit Repetitive peak reverse voltage VRRM 1200 V Continuous forward current for Rth(j-c,max) TC = 148°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 IF A Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms IF,SM A Non-repetitive peak forward current TC = 25°C, tp=10 µs IF,max 1575 / 3150 A i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms ∫ i²dt A²s Diode dv/dt ruggedness VR=0...960 V dv/dt 80 V/ns Power dissipation for Rth(j-c,max) TC = 25°C Ptot 201 / 402 W Operating and storage temperature Tj;Tstg -55…175 °C Soldering temperature, wavesoldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque M3 and M4 screws M 0.7 Nm Thermal Resistances Parameter Symbol Conditions Value (leg/device) Unit min. typ. max. Characteristic Diode thermal resistance, junction – case Rth(j-c) - 0.6/0.3 0.8/0.4 K/W Thermal resistance, junction – ambient Rth(j-a) leaded - - 62 K/W
Final Data Sheet 5 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value (leg/device) Unit min. typ. max. DC blocking voltage VDC Tj = 25°C 1200 - - V Diode forward voltage VF IF= 20/40 A, Tj=25°C IF= 20/40 A, Tj=150°C 1.4 1.7 1.65 2.30 V Reverse current IR VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C 850 / 1700 µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value (leg/device) Unit min. typ. max. Total capacitive charge QC VR = 800 V, Tj=150°C & 25°C RV C dVVCQ - 101 / 202 - nC Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz pF
Figure 9. Typical capacitively stored energy as
Final Data Sheet 9 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B Package Drawings
Final Data Sheet 10 Rev. 2.0, 2014-06-10 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDW40G120C5B
Revision History
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© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warran ties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IIDW40G120C5B Revision: 2014-06-10, Rev. 2.0 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 - Final data sheet