IDW30E65D1_13 INFINEON | Alldatasheet

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RapidSwitchingEmitterControlledDiode IDW30E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 RapidSwitchingEmitterControlledDiode Features:

  • 650VEmitterControlledtechnology
  • Temperaturestablebehaviourofkeyparameters
  • Lowforwardvoltage(VF)
  • Ultrafastrecovery
  • Lowreverserecoverycharge(Qrr)
  • Lowreverserecoverycurrent(Irrm)
  • Softnessfactor>1
  • 175°Cjunctionoperatingtemperature
  • Pb-freeleadplating;RoHScompliant Applications:
  • AC/DCconverters
  • BoostdiodeinPFCstages
  • Freewheelingdiodesininvertersandmotordrives
  • Generalpurposeinverters
  • Switchmodepowersupplies Packagepindefinition:
  • Pin1-notconnected
  • Pin2andbackside-cathode
  • Pin3-anode A C 1 2 3 KeyPerformanceandPackageParameters Type Vrrm If Vf,Tvj=25°C Tvjmax Marking Package IDW30E65D1 650V 30A 1.35V 175°C E30ED1 PG-TO247-3

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 TableofContents

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM 240.0 A PowerdissipationTC=25°C Ptot 142.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic Diode thermal resistance,1) junction - case Rth(j-c) 1.06 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Diode forward voltage VF IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.35 1.32 1.28 1.70 V Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C 40.0 4000.0 µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH 1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 66 - ns Diode reverse recovery charge Qrr - 0.73 - µC Diode peak reverse recovery current Irrm - 16.8 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1370 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs Diode reverse recovery time trr - 115 - ns Diode reverse recovery charge Qrr - 0.45 - µC Diode peak reverse recovery current Irrm - 5.4 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -660 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=200A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr - 105 - ns Diode reverse recovery charge Qrr - 1.83 - µC Diode peak reverse recovery current Irrm - 25.6 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1000 - A/µs Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs Diode reverse recovery time trr - 154 - ns Diode reverse recovery charge Qrr - 0.98 - µC Diode peak reverse recovery current Irrm - 9.8 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -490 - A/µs Tvj=125°C, VR=400V, IF=30.0A, diF/dt=200A/µs

Figure 9. Typicaldiodeforwardvoltageasafunctionof

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 PG-TO247-3

EmitterControlledDiodeRapid1Series Rev.2.2,2013-12-16 t a a b b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE vGE(t) t t iC(t) vCE(t) 90% VGE vGE(t) t t iC(t) vCE(t) tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C∫ E t t V I ton = x x d CE C∫ CC

Emitter Controlled Diode Rapid 1 Series Rev. 2.2, 2013-12-16

Revision History

Revision: 2013-12-16, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2013-03-13 Preliminary data sheet 2.1 2013-10-21 Final data sheet 2.2 2013-12-16 New Marking Pattern We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.