IDW15S120 INFINEON | Alldatasheet
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Power Management & Multimarket SiC Silicon Carbide Diode Final Datasheet thinQ! TM SiC Schottky Diode 1200V SiC Schottky Diode ID W 1 5 S 1 2 0
1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2012-03-23
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
SMPS; CCM PFC Solar applications; UPS; Motor Drives Table 1 Key Performance Parameters Parameter Value Unit VDC 1200 V QC @ VR=400V 55 nC IF @ Tc < 135°C 15 A Table 2 Pin Definition Pin 1 Pin 2 Pin 3 n.c. C A Type / ordering Code Package Marking Related links IDW15S120 PG-TO247-3 D15S120 www.infineon.com/sic IDW15S120 thinQ!™ SiC Schottky Diode 1 2 3 CASE The 1200V family of Infineon SiC Schottky diodes has emerged over the years as the industry standard and is now being extended with the IDWxxS120 product family in the TO247 package. The very good thermal characteristics of the TO247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction o f this package, Infineon now offers a current capability of up to 30A in the 1200V range.
thinQ!TM SiC Schottky Diode IDW15S120 Table of contents Final Data Sheet 3 Rev. 2.0, 2012-03-23 Table of Contents
thinQ!TM SiC Schottky Diode IDW15S120 Maximum ratings Final Data Sheet 4 Rev. 2.0, 2012-03-23
2 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Continuous forward current IF – – 15 A TC < 135°C, D=1 Surge non-repetitive forward current, sine halfwave IF,SM – – 73 TC = 25°C, tp=10 ms – – 58 TC = 150°C, tp=10 ms Non-repetitive peak forward current IF,max – – 389 TC = 25°C, tp=10 µs i²t value ∫ i²dt – – 27 A²s TC = 25°C, tp=10 ms – – 17 TC = 150°C, tp=10 ms Repetitive peak reverse voltage VRRM – – 1200 V Diode dv/dt ruggedness dv/dt – – 50 V/ns VR=0..480 V Power dissipation Ptot – – 150 W TC = 25°C Operating and storage temperature Tj;Tstg -55 – 175 °C Mounting torque – – 60 Ncm M3 and M3.5 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3 Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC – – 1.0 K/W Thermal resistance, junction- ambient RthJA – – 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold – – 260 °C 1.6mm (0.063 in.) from case for 10 s
thinQ!TM SiC Schottky Diode IDW15S120
Electrical characteristics
Final Data Sheet 5 Rev. 2.0, 2012-03-23
4 Electrical characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. DC blocking voltage VDC 1200 – – V IR = 0.30 mA, Tj = 25°C Diode forward voltage VF – 1.5 1.8 IF= 15 A, Tj=25°C Reverse current IR – 15 305 µA VR=1200 V, Tj=25°C – 30 1500 VR=1200 V, Tj=150°C Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge Qc – 55 – nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. – 84 – VR=1000 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. Total Capacitance C – 870 – pF VR=1 V, f=1 MHz – 75 – VR=300 V, f=1 MHz – 60 – VR=600 V, f=1 MHz
thinQ!TM SiC Schottky Diode IDW15S120 Electrical characteristics diagrams Final Data Sheet 6 Rev. 2.0, 2012-03-23
5 Electrical characteristics diagrams
Power dissipation Diode forward current 100 120 140 160 25 50 75 100 125 150 175 Ptot[W] TC[°C] 100 120 25 50 75 100 125 150 175 IF[A] TC[°C] 0.1 0.3 0.5 0.7 Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Table 8 Typical forward characteristics Typ. reverse current vs. reverse voltage IF [ A] VF [V] 1.E-9 1.E-8 1.E-7 1.E-6 1.E-5 1.E-4 200 400 600 800 1000 1200 IR [A] VR [V] IF=f(VF); tp=200 µs; RthJC,max ;parameter: Tj IR=f(VR); RthJC,max ; parameter: Tj -55°C 175°C 150°C 25°C 100°C -55°C 25°C 100°C 150°C 175°C
thinQ!TM SiC Schottky Diode IDW15S120 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2012-03-23 Table 9 Typ. capacitance charge vs. current slope1) Max. transient thermal impedance 100 300 500 700 900 QC[nC] dIF/dt [A/µs] 0.01 0.1 Zth,jc [K/W] tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse QC=f(diF/dt); VR=400 V; Tj=150°C; IF≤IF,max Zth,jc=f(tP); parameter: D=tP/T 1) Only capacitive charge, guaranteed by design. Table 10 Typ. capacitance stored energy Typ. capacitance vs. reverse voltage 0 200 400 600 800 1000 1200 EC[µJ] VR [V] 200 400 600 800 1000 1200 0.1 1 10 100 1000 C [pF] VR [V] EC=f(VR) C=f(VR); Tj=25°C; f=1 MHz
thinQ!TM SiC Schottky Diode IDW15S120 Package outlines Final Data Sheet 8 Rev. 2.0, 2012-03-23
6 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
thinQ!TM SiC Schottky Diode IDW15S120
Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this docu ment. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2012-03-23 Published by Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The inf ormation given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the devi ce, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may con tain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 9 Rev. 2.0, 2012-03-23
7 Revision History
thinQ!TM SiC Schottky Diode Revision History: 2012-03-23, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version)
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