IDW100E60_V01 INFINEON | Alldatasheet
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IFAG IPC TD VLS 1 Rev. 2.3 20.09.2013 Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com Applications: Welding Motor drives Type VRRM IF VF,Tj=25°C Tj,max Marking Package IDW100E60 600V 100A 1.65V 175C D100E60 PG-TO247-3 Maximum Ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VR R M 600 V Continuous forward current TC = 25C TC = 90C TC = 100C IF 150 104 A Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave IF S M 400 A Maximum repetitive forward current TC = 25C, tp limited by tj,max, D = 0.5 IF R M 300 A Power dissipation TC = 25C TC = 90C TC = 100C Pt o t 375 212 198 W Operating junction temperature Tj -40…+175 °CStorage temperature Ts t g -55...+150 Soldering temperature 1.6mm (0.063 in.) from case for 10 s TS 260 PG-TO247-3
IFAG IPC TD VLS 2 Rev. 2.3 20.09.2013 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic Thermal resistance, junction – case Rt h J C 0.40 K/W Thermal resistance, junction – ambient Rt h J A 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage VR R M IR =0.25mA 600 - - V Diode forward voltage VF IF =100A Tj =25 C Tj =175 C 1.65 1.65 2.0 Reverse leakage current IR VR =600V Tj =25 C Tj =175 C 3300 Dynamic Electrical Characteristics Diode reverse recovery time tr r Tj =25 C VR =400V, IF =100A, dI F /dt =1200A/µs - 120 - ns Diode reverse recovery charge Qr r - 3.6 - µC Diode peak reverse recovery current Ir r - 49.5 - A Diode peak rate of fall of reverse recovery current during tb dI r r/dt - 750 - A/µs Diode reverse recovery time tr r Tj =125 C VR =400V, IF =100A, dI F /dt =1200A/µs - 168 - ns Diode reverse recovery charge Qr r m - 5.8 - µC Diode peak reverse recovery current Ir r - 61.6 - A Diode peak rate of fall of reverse recovery current during tb dI r r/dt - 705 - A/µs Diode reverse recovery time tr r Tj =175 C VR =400V, IF =100A, dI F /dt =1200A/µs - 200 - ns Diode reverse recovery charge Qr r m - 7.8 - µC Diode peak reverse recovery current Ir r - 67.0 - A Diode peak rate of fall of reverse recovery current during tb dI r r/dt - 650 - A/µs
Figure 9. Diode transient thermal
IFAG IPC TD VLS 6 Rev. 2.3 20.09.2013
IFAG IPC TD VLS 7 Rev. 2.3 20.09.2013 Published by Infineon Technologies AG
81726 Munich, Germany
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