IDV02S60C INFINEON | Alldatasheet
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Technical content
Industrial & Multimarket Data Sheet Rev. 2.0, 2010-05-31 Final 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C SiC Silicon Carbide Diode
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Final Data Sheet 2 Rev. 2.0, 2010-05-31
1 Description
The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The ID VxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In orde r to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying its patented diffusion solderi ng process for attaching the chip to the leadframe. The result is nearly identical thermal characteristics to those of the SiC diodes in the non-isolated TO220 package.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Nearly no reverse / forward recovery charge
- High surge current capability
- Fully isolated package with nearly similar Rth,jc as the standard T0220
- Suitable for high temperature operation
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC 1) for target applications
- Switching behavior independent of forward current, switching speed and temperature Benefits
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Good thermal performance without the need for additional isolation layer and washer
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lowe r operating temperatures and less fans
- Reduced EMI
Applications
Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDC 600 V QC 3.2 nC IF @ TC < 120°C 2A Table 2 Pin Definition Pin 1 Pin2 Pin 3 C A n.a. Type / Ordering Code Package Marking Related Links IDV02S60C PG-TO220 FullPAK D02S60C IFX SiC Diodes Webpage
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Table of Contents Final Data Sheet 3 Rev. 2.0, 2010-05-31 Table of Contents
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Maximum ratings Final Data Sheet 4 Rev. 2.0, 2010-05-31
2 Maximum ratings
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous forward current IF -- 2 A TC= < 120°C Surge non-repetitive IF, SM -- 1 1 . 5 TC= 25°C, tp = 10 ms forward current, sine halfwave - - 9.7 TC= 150°C, tp = 10 ms Non-repetitive peak forward current IF, max -- 1 0 0 TC= 25°C, tp = 10 µs i² t value ∫i²dt - - 0.61 A²s TC= 25°C, tp = 10 ms -0 . 4 4 TC= 150°C, tp = 10 ms Repetitive peak reverse voltage VRRM -- 6 0 0 V Tj= 25°C Diode dv/dt ruggedness dv/dt - - 50 V/ns VR= 0...480 V Power dissipation Ptot -- 1 8 W TC= 25 °C Operating and storage temperature Tj; Tstg - 55 - 175 °C Mounting torque - - 50 Ncm M2.5 screws Table 4 Thermal characteristics TO-220 FullPAK Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 8 . 5 K / W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C
Electrical characteristics
Final Data Sheet 5 Rev. 2.0, 2010-05-31
4 Electrical characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. DC blocking voltage VDC 600 - - V Tj= 25 °C, IR= 0.015 mA Diode forward voltage VF -1 . 7 1 . 9 IF= 2 A, Tj= 25 °C -2 . 1 2 . 6 IF= 2 A, Tj= 150 °C Reverse current IR -0 . 2 3 1 5 µ A IR= 600 V, Tj=25 °C - 1 150 IR= 600 V, Tj=150 °C Table 6 AC characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Total capacitive charge Qc -3 . 2 - n C VR= 400 V, F ≤I Fmax diF /dt =200 A/μs, Tj=150 °C Switching time1) 1)tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. tc -- < 1 0 n s C -6 0 - p F VR= 1 V, f= 1 MHz -8- VR= 300 V, f= 1 MHz -8- VR= 600 V, f= 1 MHz
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Electrical characteristics diagrams Final Data Sheet 6 Rev. 2.0, 2010-05-31
5 Electrical characteristics diagrams
Power dissipation Diode forward current Ptot = f(TC) IF=f(TC); T j≤ 175 °C Table 8 Typ. forward characteristic Typ. forward characteristic in surge current IF=f(VF); tp=400 µs; parameter: Tj IF=f(VF); tp=400 µs; parameter: Tj
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2010-05-31 Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage QD=f(diF/dt)4); Tj= 150 °C; IF ≤ IF max I R =f(VR) 1) Only capacitive charge occuring, guaranteed by design Table 10 Typ. transient thermal impedance Typ. capacitance vs. reverse voltage Zthjc=f(tp) ; parameter: D = tP / T C = f (VR); TC=25 °C, f=1 MHz
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.0, 2010-05-31 Table 11 Typ. C stored energy EC=f(VR)
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Package outlines Final Data Sheet 9 Rev. 2.0, 2010-05-31
6 Package outlines
Figure 1 Outlines TO-2 20 FullPAK, dimensions in mm/inches
2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C
Revision History
Final Data Sheet 10 Rev. 2.0, 2010-05-31
7 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2010-05-31 Published by Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-suppo rt devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode Revision History: 2010-05-31, Rev. 2.0 Previous Revision: Revision Subjects (major ch anges since last revision)