IDT16S60C INFINEON | Alldatasheet

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Technical content

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery/ No forward recovery
  • No temperature influence on the switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC 1) for target applications
  • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like:
  • CCM PFC
  • Motor Drives Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous forward current I F T C<140 °C 16 A RMS forward current I F,RMS f =50 Hz 23 Surge non-repetitive forward current, sine halfwave I F,SM T C=25 °C, t p=10 ms 118 Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 64 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 528 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 69 A2s Repetitive peak reverse voltage V RRM 600 V Diode dv/dt ruggedness d v/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 136 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque M3 and M3.5 screws 60 Ncm Value V DC 600 V Q c 38 nC I F 16 A Product Summary Type Package Marking Pin 1 Pin 2 IDT16S60C PG-TO220-2-2 D16S60C C A PG-TO220-2-2 Rev. 2.0 page 1 2006-03-14

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.1 K/W Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.)from case for 10s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.2 mA 600 - - V Diode forward voltage V F I F=16 A, T j=25 °C - 1.5 1.7 I F=16 A, T j=150 °C - 1.7 2.1 Reverse current I R V R=600 V, T j=25 °C - 2 200 µA V R=600 V, T j=150 °C - 10 2000 AC characteristics Total capacitive charge Q c -3 8- n C Switching time3) t c - - <10 ns Total capacitance C V R=1 V, f = MHz - 650 - pF V R=300 V, f =1 MHz - 100 - V R=600 V, f =1 MHz - 100 - Values V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C 1) J-STD20 and JESD22 4) Only capacitive charge occuring, guaranteed by design. 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5 mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Rev. 2.0 page 2 2006-03-14

1 Power dissipation 2 Diode forward current

P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: R thJC(max); V F(max) 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: T j 100 120 140 25 50 75 100 125 150 175 200 T C [°C] P tot [W] -55 °C 25 °C 100 °C 150 °C 175 °C 0 0.5 1 1.5 2 2.5 3 VF [V] I F [A] 25 50 75 100 125 150 175 200 T C [°C] I F [A] -55 °C 25 °C 100 °C 100 °C 150 °C 150 °C 175 °C 120 160 02468 V F [V] I F [A] Rev. 2.0 page 3 2006-03-14

5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 10-1 100 101 102 103 100 200 300 400 500 600 700 800 V R [V] C [pF] single pulse 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 101 100 10-1 10-2 10-3 t [s] Z thJC [K/W] 25 °C 100 °C 150 °C 175 °C -55 °C 101 100 10-1 10-2 10-3 100 200 300 400 500 600 V R [V] I R [µA] 0.2 0.5 0.1 0 5 10 15 20 25 I F(AV) [A] P F(AV) [W] Rev. 2.0 page 4 2006-03-14

9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 100 400 700 1000 di F/dt [A/µs] Q c [nC] 0 100 200 300 400 500 600 V R [V] E c [µJ] Rev. 2.0 page 5 2006-03-14

Rev. 2.0 page 6 2006-03-14

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2006-03-14