IDT06S60C_08 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery/ No forward recovery
  • No temperature influence on the switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC 1) for target applications
  • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like:
  • CCM PFC
  • Motor Drives Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous forward current I F T C<140 °C 6A RMS forward current I F,RMS f =50 Hz 9 Surge non-repetitive forward current, sine halfwave I F,SM T C=25 °C, t p=10 ms 49 Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 28 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 210 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 12 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt d v/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 63 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque M3 and M3.5 screws 60 Ncm Value V DC 600 V Q c 15 nC I F 6 A Product Summary PG-TO220-2-2 Type Package Marking Pin 1 Pin 2 IDT06S60C PG-TO220-2-2 D06S60C C A Rev. 2.1 page 1 2008-06-06

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.4 K/W Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed al leads T sold 1.6mm(0.063 in.) from case for 10s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.08 mA 600 - - V Diode forward voltage V F I F=6 A, T j=25 °C - 1.5 1.7 I F=6 A, T j=150 °C - 1.7 2.1 Reverse current I R V R=600 V, T j=25 °C - 0.7 80 µA V R=600 V, T j=150 °C - 3 800 AC characteristics Total capacitive charge Q c -1 5- n C Switching time3) t c - - <10 ns Total capacitance C V R=1 V, f =1 MHz - 280 - pF V R=300 V, f =1 MHz -3 5- V R=600 V, f =1 MHz -3 5- 4) Only capacitive charge occuring, guaranteed by design. Values V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C 3) t c is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms at 5mA. Rev. 2.1 page 2 2008-06-06

1 Power dissipation 2 Diode forward current

P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: RthJC(max); VF(max) 3 Typ. forward characteristic 4 Typ. forward characteristc in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter Tj 25 50 75 100 125 150 175 200 T C [°C] P tot [W] -55 °C 25 °C 100 °C 150 °C 175 °C 01234 V F [V] I F [A] 25 50 75 100 125 150 175 200 T C [°C] I F [A] -55 °C 25 °C 100 °C 150 °C 175 °C 02468 V F [V] I F [A] Rev. 2.1 page 3 2008 -06-06

5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 10310210110010-1 100 200 300 400 V R [V] C [pF] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 101 100 10-1 10-2 t P [s] Z thJC [K/W] -55 °C 25 °C 100 °C 150 °C 175 °C 101 100 10-1 10-2 10-3 100 200 300 400 500 600 V R [V] I R [µA] 0.1 0.2 0.5 0 5 10 15 I F(AV) [A] P F(AV) [W] Rev. 2.1 page 4 2008-06 -06

9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 100 400 700 1000 di F/dt [A/µs] Q c [nC] 0 100 200 300 400 500 600 V R [V] E c [µC] Rev. 2.1 page 5 2008-06-06

PG-TO220-2-2: Outline Dimensions in mm/inches Rev. 2.1 page 6 2008 -06-06

Rev. 2.1 page 7 2008-06 -06