IDP20E65D2 ISC | Alldatasheet
Document overview
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Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 UltrafastRecoveryDiode IDP20E65D2
FEATURES
- UltrafastRecoveryTime
- LowForward Voltage
- LowLeakageCurrent
- 175℃ OperatingJunctionTemperature
- HighTemperature GlassPassivated Junction
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein switching power supplies and otherpower Switchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM PeakRepetitiveReverseVoltage 650 V IF(AV) AverageRectifiedForwardCurrent 40 A IFSM NonrepetitivePeakSurgeCurrent (Surgeappliedatratedloadconditionshalf- wave,singlephase,tp=8.3ms) 120 A TJ JunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.25 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 UltrafastRecoveryDiode IDP20E65D2 ELECTRICALCHARACTERISTICS(Ta=25℃) (PulseTest:PulseWidth=300μs,DutyCycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF MaximumInstantaneousForwardVoltage IF=20A 2.2 V IR MaximumInstantaneousReverseCurrent VRRM=600V 40 μA trr MaximumReverseRecoveryTime IF=1A;di/dt=200A/us;VR=30V 32 ns