IDP08E65D2 ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 UltrafastRectifier IDP08E65D2
FEATURES
- WithTO-220 packaging
- Metalsiliconjunction,majority carrierconduction
- Lowpower loss,high efficiency
- Guardringforovervoltage protection
- High surgecapability
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Switchingpower supply
- High frequencyinverters
- Reversebatteryprotection
- Polarityprotection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR PeakRepetitiveReverseVoltage RMSVoltage DCBlockingVoltage 650 V IF(AV) AverageRectifiedForwardCurrent@Tc=25℃ Tc=100℃ 8 A IFRM RepetitivePeakSurgeCurrent (SquareWave) 24 A IFSM NonrepetitivePeakSurgeCurrent 8.3 ms single half sine-wave superimposed on ratedloadconditions;Oneshot 64 A PD MaximumPowerDissipation 56 W Tj JunctionTemperature -40~150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 UltrafastRectifier IDP08E65D2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.69 ℃/W ELECTRICALCHARACTERISTICS(PulseTest:PulseWidth=300μs,DutyCycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF MaximumInstantaneousForwardVoltage IF=8A 1.7 V IR MaximumInstantaneousReverseCurrent VR=ratedVRRM;Tc=25℃ Tc=175℃ 2000 μA trr MaximumReverseRecoveryTime IF =8A;dIF/dt=1000A/μs;VR=400V 23 ns