IDP04E120_09 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • 1200 V diode technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • Easy paralleling
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • Qualified according to JEDEC for target applications Pin 1 PIN 2 PIN 3 C A - Marking D04E120 Type Package Ordering Code IDP04E120 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current TC=25°C TC=90°C IF 11.2 7.1 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 28 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 16.5 Power dissipation TC=25°C TC=90°C Ptot 43.1 20.6 W Operating and storage temperature Tj , Tstg -55...+150 °C Soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s TS 260 °C PG-TO220-2 PG-TO220-2

2009-08-19Rev.2.3 Page 2 IDP04E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.9 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR 100 350 μA Forward voltage drop IF=4A, Tj=25°C IF=4A, Tj=150°C VF 1.65 1.7 2.15 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air.

2009-08-19Rev.2.3 Page 3 IDP04E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=800V, IF=4A, diF/dt=750A/μs, Tj=25°C VR=800V, IF=4A, diF/dt=750A/μs, Tj=125°C VR=800V, IF=4A, diF/dt=750A/μs, Tj=150°C trr 115 180 185 ns Peak reverse current VR=800V, IF = 4 A, diF/dt=750A/μs, Tj=25°C VR=800V, IF =4A, diF/dt=750A/μs, Tj=125°C VR=800V, IF =4A, diF/dt=750A/μs, Tj=150°C Irrm 7.15 8.1 A Reverse recovery charge VR=800V, IF=4A, diF/dt=750A/μs, Tj=25°C VR=800V, IF =4A, diF/dt=750A/μs, Tj=125°C VR=800V, IF =4A, diF/dt=750A/μs, Tj=150°C Qrr 330 575 630 nC Reverse recovery softness factor VR=800V, IF=4A, diF/dt=750A/μs, Tj=25°C VR=800V, IF=4A, diF/dt=750A/μs, Tj=125°C VR=800V, IF=4A, diF/dt=750A/μs, Tj=150°C S 7.8 7.8

2009-08-19Rev.2.3 Page 4 IDP04E120

2 Diode forward current

IF = f(TC) parameter: Tj≤ 150°C 25 50 75 100 °C 150 TC A IF

1 Power dissipation

Ptot = f (TC) parameter: Tj ≤ 150°C 25 50 75 100 °C 150 TC W Ptot 3 Typ. diode forward current IF = f (VF) 0 0.5 1 1.5 2 V 3 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 1.8 V 2.4 VF

2009-08-19Rev.2.3 Page 5 IDP04E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/μs 1000 diF/dt 100 150 200 250 300 350 400 ns 500 trr 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 200 300 400 500 600 700 800 A/μs 1000 diF/dt 400 450 500 550 600 650 700 750 800 nC 900 Qrr 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/μs 1000 diF/dt A Irr 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/μs 1000 diF/dt S

2009-08-19Rev.2.3 Page 6 IDP04E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0s tp -410 -310 -210 -110 010 110 K/W IDP04E120 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2009-08-19Rev.2.3 Page 7 TO-220-2 IDP04E120

2009-08-19Rev.2.3 Page 8 IDP04E120 Published by Infineon Technologies AG

81726 Munich, Germany

81726 München, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no eventbe regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery termsand conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may containdangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. InfineonTechnologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.