IDM02G120C5_15 INFINEON | Alldatasheet

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Technical content

Silicon Carbide Schottky Diode Final Data Sheet Rev. 2.0, 2015-06-22 ID M02G 120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode

1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5 SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  RelatedLinks: www.infineon.com/sic

Applications

 Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type VDC IF QC Tj,max Marking Package IDM02G120C5 1200V 2A 14nC 175°C D0212C5 PG-TO252-2

Final Data Sheet 3 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5 Table of Contents

Final Data Sheet 4 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5 Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continoues forward current for Rth(j-c,max) TC = 170°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 IF A Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms IF,SM Non-repetitive peak forward current TC = 25°C, tp=10 µs IF,max 344 i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms ∫ i²dt 7.0 4.9 A²s Diode dv/dt ruggedness VR=0...960 V dv/dt 80 V/ns Power dissipation TC = 25°C Ptot 98 W Operating and storage temperature Tj;Tstg -55…175 °C Soldering temperature, Wave- and reflowsoldering allowed (reflow MSL1) Tsold 260 Thermal Resistances Parameter Symbol Conditions Value Unit min. typ. max. Characteristic Diode thermal resistance, junction – case Rth(j-c) - 1.2 1.5 K/W Thermal resistance, junction – ambient Rth(j-a) SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm² cooling area2) 35 2) Device on 40 mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper for cathode connection. PCB is vertical without air stream cooling.

Final Data Sheet 5 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5 Electrical Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Static Characteristic DC blocking voltage VDC Tj = 25°C 1200 - - V Diode forward voltage VF IF= 2 A, Tj=25°C IF= 2 A, Tj=150°C 1.4 1.7 1.65 2.30 V Reverse current IR VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C 1.2 90 µA AC Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Dynamic Characteristics Total capacitive charge QC VR = 800 V, Tj=150°C RV C dVVCQ - 14 - nC Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 182 pF Electrical Characteristics diagram

Figure 9. Typical capacitance stored energy as

Final Data Sheet 9 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5 PG-TO252-2 Package Drawings

Final Data Sheet 10 Rev. 2.0, 2015-06-22 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM02G120C5

Revision History

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© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The infor mation given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device , Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology , delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For inform ation on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IIDM02G120C5 Revision: 2015-06-22, Rev. 2.0 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2015-06-22 Final data sheet