IDL12G65C5_13 INFINEON | Alldatasheet
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Power Management & Multimarket SiC Silicon Carbide Diode Final Data Sheet Rev. 2.0, 2013-12-05 5th Generation thinQ! TM 650V SiC Schottky Diode IDL12G65C5
1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.0, 2013-12-05
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 27 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 18 nC EC; VR=400V 4.1 µJ IF @ TC < 145°C 12 A Table 2 Pin Definition Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 n.c. n.c. A A C Type / ordering Code Package Marking IDL12G65C5 PG-VSON-4 D1265C5 Related Links http://www.infineon.com/sic ThinPAK Webpage ThinPAK Application Note IDL12G65C5 5th Generation thinQ!™ SiC Schottky Diode ThinPAK 8x8 Bottom view 3,4 5 ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infi neon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Table of contents Final Data Sheet 3 Rev. 2.0, 2013-12-05 Table of Contents
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Maximum ratings Final Data Sheet 4 Rev. 2.0, 2013-12-05
2 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Continuous forward current IF – – 12 A TC < 145°C, D=1 Surge non-repetitive forward current, sine halfwave IF,SM – – 57 TC = 25°C, tp=10 ms – – 50 TC = 150°C, tp=10 ms Non-repetitive peak forward current IF,max – – 505 TC = 25°C, tp=10 µs i²t value ∫ i²dt – – 16.5 A²s TC = 25°C, tp=10 ms – – 12.6 TC = 150°C, tp=10 ms Repetitive peak reverse voltage VRRM – – 650 V Tj = 25°C Diode dv/dt ruggedness dv/dt – – 100 V/ns VR=0..480 V Power dissipation Ptot – – 138 W TC = 25°C Operating and storage temperature Tj;Tstg -55 – 150 °C
3 Thermal characteristics
Table 4 Thermal characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC – 0.7 0.9 K/W Thermal resistance, junction- ambient RthJA – – 45 SMD version, device on PCB, 6cm² cooling area1) 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70μm) for drain connection. PCB is vertical without air stream cooling.
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5
Electrical characteristics
Final Data Sheet 5 Rev. 2.0, 2013-12-05
4 Electrical characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. DC blocking voltage VDC 650 – – V IR= 0.19 mA, Tj=25°C Diode forward voltage VF – 1.5 1.7 IF= 12 A, Tj=25°C – 1.8 2.1 IF= 12 A, Tj=150°C Reverse current IR – 0.65 190 µA VR=650 V, Tj=25°C – 0.16 68 VR=600 V, Tj=25°C – 2.4 1350 VR=650 V, Tj=150°C Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge Qc – 18 nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. Total Capacitance C – 360 – pF VR=1 V, f=1 MHz – 48 – VR=300 V, f=1 MHz – 47 – VR=600 V, f=1 MHz
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Electrical characteristics diagrams Final Data Sheet 6 Rev. 2.0, 2013-12-05
5 Electrical characteristics diagrams
Power dissipation Maximal diode forward current 100 120 140 25 50 75 100 125 150 Ptot [W] Tc [°C] 100 120 25 50 75 100 125 150 IF [A] Tc [°C] 0.1 0.3 0.5 0.7 Ptot=f(TC); RthJC,max IF=f(TC); RthJC,max; Tj≤150°C; parameter D=duty cycle Table 8 Typical forward characteristics Typical forward characteristics in surge current 0 0.5 1 1.5 2 2.5 IF [A] VF [V] -55 C 25 C 100 C 150 C 100 120 0 1 2 3 4 5 6 IF [A] VF [V] -55 C 25 C 100 C 150 C IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2013-12-05 Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage 100 300 500 700 900 QC[nC] dIF/dt [A/µs] 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 100 200 300 400 500 600 IR [A] VR [V] -55 C 25 C 100 C 150 C QC=f(dIF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj; 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 0.01 0.1 1E-6 1E-3 1E0 Zthjc [K/W] tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 100 150 200 250 300 350 400 450 500 0 1 10 100 1000 C [pF] VR [V] Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.0, 2013-12-05 Table 11 Typ. capacitance stored energy 0 200 400 600 EC[µJ] VR [V] EC=f(VR)
6 Simplified Forward Characteristics Model
Equivalent forward current curve Mathematical Equation IF [A] VF [V] VF=f(IF) Tj in °C; -55°C < Tj < 150°C; IF < 24 A 1/Rdiff Vth 0.03910.07110.071 V 04.1001.0 4-26- jjjDIFF jjTH TTTR TTV FDIFFTHF IRVV
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5 Package outlines Final Data Sheet 9 Rev. 2.0, 2013-12-05
7 Package outlines
Figure 1 Outlines ThinPAK 8x8, dimensions in mm/inches
5th Generation thinQ!TM SiC Schottky Diode IDL12G65C5
Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2013-05-13 Published by Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims a ny and all warranties and liabilities of any kind, including without limitation, warranties of non -infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life -support devices or systems and/or automotive, aviation and aerospace applications or systems only with t he express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2013-12-05
8 Revision History
5th Generation thinQ!TM SiC Schottky Diode Revision History: 2013-12-05, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version)
2.0 Release of the data sheet
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