IDK08G120C5 ISC | Alldatasheet
Document overview
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Technical content
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FEATURES
- Revolutionary semiconductormaterial-SiliconCarbide
- No reverserecovery current/noforwardrecovery
- Temperature independentswitching behaviour
APPLICATIONS
- Drives
- Industrial power supplies:IndustrialUPS
- Solarcentralinverters andSolarstring inverter ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RecurrentPeakReverseVoltage 1200 V IFAV AverageForwardRectifiedCurrent 22.8 A IFSM Surgenon-repetitiveforwardcurrent,sinehalfwave,tp=10ms 70 A PD MaximumPowerDissipation 126 W TJ JunctionTemperature 175 ℃ Tstg StorageTemperatureRange -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.19 ℃/W ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR ReverseCurrent VR=VRRM;TJ=25℃ -- -- 40 uA VR=VRRM;TJ=150℃ -- 14 --
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