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Technical content

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery / No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC 1) for target applications
  • Optimized for high temperature operation thinQ!TM Diode designed for fast switching applications like:
  • Lowest Figure of Merit QC/IF
  • SMPS e.g.; CCM PFC
  • Motor Drives; Solar Applications; UPS VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary Type Package Marking Pin 1 Pin 2 IDH10S120 PG-TO220-2 D10S120 C A PG-TO220-2 VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 Rev. 2.0 page 1 2010-04-20 Maximum ratings Parameter Symbol Conditions Unit Continuous forward current I F T C<130 °C 10 A I F,SM T C=25 °C, t p=10 ms 58 T C=150 °C, t p=10 ms 50 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 250 ∫i 2dt T C=25 °C, t p=10 ms 16 A2s T C=150 °C, t p=10 ms 12 Repetitive peak reverse voltage V RRM T j=25 °C 1200 V Diode dv/dt ruggedness dv/ dt VR= 0….960 V 50 V/ns Power dissipation P tot T C=25 °C 135 W Operating and storage temperature T j, T stg -55 ... 175 °C Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.) from case for 10s 260 Mounting torque M3 and M3.5 screws 60 Mcm i ²t value Value Surge non-repetitive forward current, sine halfwave VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary Type Package Marking Pin 1 Pin 2 IDH10S120 PG-TO220-2 D10S120 C A PG-TO220-2 VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 VDC 600 V QC 3.2 nC IF; TC< 130 °C 3 A Product Summary VDC 1200 V QC 36 nC IF; TC< 130 °C 10 A Product Summary PG-TO220-2 Rev. 2.0 page 1 2010-04-20

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1 K/W Thermal resistance, junction - ambient Thermal resistance, junction- ambient, leaded -- 6 2 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.05 mA, T j=25 °C 1200 - - V Diode forward voltage V F I F=10 A, T j=25 °C - 1,65 1,8 I F=10 A, T j=150 °C - 2,55 - Reverse current I R V R=1200 V, T j=25 °C - 10 240 µA V R=1200 V, T j=150 °C - 40 1000 Values R thJA Rev. 2.0 page 2 2010-04-20 AC characteristics Total capacitive charge Q c -3 6- n C Switching time2) t c - - <10 ns Total capacitance C V R=1 V, f =1 MHz - 500 - pF V R=300 V, f =1 MHz -4 0- V R=600 V, f =1 MHz -3 6- 1) J-STD20 and JESD22 V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C 2) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from t rr which is dependent on T j, ILOAD and di/dt. No reverse recovery time constant t rr due to absence of minority carrier injection 4) Only capacitive charge occuring, guaranteed by design 3) Under worst case Zth conditions. Rev. 2.0 page 2 2010-04-20

1 Power dissipation 2 Diode forward current

P tot=f(T C) I F=f(T C)3); T j≤175 °C; parameter: D = t p/T 100 120 140 25 75 125 175 Ptot [W] TC [°C] 0.7 0.5 0.3 0.1 100 25 75 125 175 IF [A] TC [°C] Rev. 2.0 page 3 2010-04-20 3 Typ. forward characteristic 4 Typ. Reverse current vs. reverse voltage I F=f(V F); t p=400 µs E C=f(VR) parameter: T j 100 120 140 25 75 125 175 Ptot [W] TC [°C] 0.7 0.5 0.3 0.1 100 25 75 125 175 IF [A] TC [°C] -55 °C 25 °C 100 °C 150 °C 175 °C 10-3 10-2 10-1 100 101 102 200 400 600 800 1000 1200 IR [µA] VR [V] -55 °C 25 °C 100 °C 150 °C 175 °C 012345 IF [A] VSD [V] -55 °C 25 °C 100 °C 150 °C 175 °C 10-3 10-2 10-1 100 101 102 200 400 600 800 1000 1200 IR [µA] VR [V] Rev. 2.0 page 3 2010-04-20

5 Typ. capacitance charge vs. current slope 6 Transient thermal impedance Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max Z thJC=f(t p) parameter: D =t p/T 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 101 ZthJC [K/W] t [s] 100 400 700 1000 QC [nQ] diF/dt [A/µs] Rev. 2.0 page 4 2010-04-20 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C =f(V R); T C=25 °C, f =1 MHz E C=f(V R) 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 101 ZthJC [K/W] t [s] 100 400 700 1000 QC [nQ] diF/dt [A/µs] 100 101 102 103 100 200 300 400 500 C [pF] VR [V] 0 100 200 300 400 500 600 Ec [µC] VR [V] Rev. 2.0 page 4 2010-04-20

PG-TO220-2: Outline thinQ!TM 2G Diode designed for fast switching applications like: Rev. 2.0 page 5 2010-04-20 Dimensions in mm/inches Rev. 2.0 page 5 2010-04-20

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© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, including without limitation, warranties of non-infringement of intellectual property rights thinQ!TM 2G Diode designed for fast switching applications like: Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.0 page 6 2010-04-20 and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 6 2010-04-20