IDH10G65C6 ISC | Alldatasheet
Document overview
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Technical content
SiCSchottkyDiode IDH10G65C6 www.iscsemi.com
FEATURES
- Ultra-low VF
- 175℃ operating junction temperature
APPLICATIONS
- Solarinverter
- Uninterruptible powersupply
- Power factorcorrectionin SMPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM PeakRepetitiveReverseVoltage 650 V IF Continuous forwardcurrent TC≤25℃,D=1 24 A TC≤125℃,D=1 13 A IFRM Surge-repetitiveforwardcurrent, sinehalfwave,tp=10ms 44 A IFSM Surgenon-repetitive forward current,sine halfwave,10ms TC=25℃ 55 A TC=150℃ 44 A Ptot Power dissipation 72 W TJ Max. JunctionTemperature 175 ℃ Tstg StorageTemperatureRange -55~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.1 ℃/W
SiCSchottkyDiode IDH10G65C6 www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25°Cunless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF ForwardVoltageDrop IF=10A -- -- 1.35 V IR PeakReverseCurrent VR=420V -- -- 33 uA PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.