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Technical content

Features

  • V RRM = 650 V
  • I F = 2x 40 A
  • 650 V emitter controlled technology
  • Temperature stable behaviour of key parameters
  • Low forward voltage (V F)
  • Low reverse recovery charge (Q rr)
  • Low reverse recovery current (I rrm)
  • Maximum junction temperature T vjmax = 175°C
  • 2500 V RMS electrical isolation, 50/60 Hz, t = 1 min
  • 100% tested isolated mounting surface
  • Pb-free lead plating
  • RoHS compliant Potential applications
  • Air conditioning
  • General purpose drives (GPD)
  • Industrial SMPS Product validation
  • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Fully isolated package TO-247

Description

  • Pin 1 – anode (A1)
  • Pin 2 – cathode (C)
  • Pin 3 – anode (A2) Diode_common A1C1C2A2 A1 A2 C Type Package Marking IDFW80C65D1 PG-TO247-3-AI C80ED1 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2022-06-24

Emitter Controlled Rapid-1 Diode in Advanced Isolation Table of contents Datasheet 2 Revision 1.10 2022-06-24

1 Package

Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Isolation test voltage RMS1) Visol 2500 V Internal emitter inductance measured 5 mm (0.197 in.) from case LE 13.0 nH Storage temperature Tstg -55 150 °C Soldering temperature wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque M M3 screw Maximum of mounting process: 3 0.6 Nm Thermal resistance, junction-ambient Rth(j-a) 65 K/W 1) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.

2 Diode

Table 2 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj ≥ 25 °C 650 V Diode forward current, limited by Tvjmax IF Th = 25 °C 74 A Th = 65 °C 59 Diode pulsed current, tp limited by Tvjmax IFpulse 160 A Diode surge non repetitive forward current, sine halfwave IFSM Th = 25 °C, tP = 10 ms 320 A Power dissipation Ptot Th = 25 °C 112 W Th = 65 °C 82 Table 3 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 40 A Tvj = 25 °C 1.45 1.7 V Tvj = 175 °C 1.39 Reverse leakage current1) IR VR = 650 V Tvj = 25 °C 40 µA Tvj = 175 °C 1200 (table continues...) IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 3 Revision 1.10 2022-06-24

Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode reverse recovery time trr VR = 400 V Tvj = 25 °C, IF = 40 A, -diF/dt = 820 A/µs 73 ns Tvj = 150 °C, IF = 40 A, -diF/dt = 820 A/µs 120 Diode reverse recovery charge Qrr VR = 400 V Tvj = 25 °C, IF = 40 A, -diF/dt = 820 A/µs 1.1 µC Tvj = 150 °C, IF = 40 A, -diF/dt = 820 A/µs 2.62 Diode peak reverse recovery current Irrm VR = 400 V Tvj = 25 °C, IF = 40 A, -diF/dt = 820 A/µs 23.5 A Tvj = 150 °C, IF = 40 A, -diF/dt = 820 A/µs Diode peak rate of fall of reverse recovery current dirr/dt VR = 400 V Tvj = 25 °C, IF = 40 A, -diF/dt = 820 A/µs

1500 A/µs

Tvj = 150 °C, IF = 40 A, -diF/dt = 820 A/µs 1250 Diode thermal resistance, junction - heatsink2) Rthjh 1.14 1.34 K/W Operating junction temperature Tvj -40 175 °C 1) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. 2) At force on body F = 500N, Ta = 25°C Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Electrical Characteristic (per leg) at Tvj = 25°C, unless otherwise specified. Dynamic test circuit, Lσ = 30 nH, Cσ = 40 pF, switch IKW40N65ES5. IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 4 Revision 1.10 2022-06-24

3 Characteristics diagrams

Power dissipation per leg as a function of heatsink temperature Ptot = f(Th) Tvj ≤ 175 °C Diode forward current per leg as a function of heatsink temperature IF = f(Th) 25 50 75 100 125 150 175 100 110 120 25 50 75 100 125 150 175 Diode transient thermal impedance per leg as a function of pulse width Zth(j-c) = f(tp) D = tp/T Typical reverse recovery time per leg as a function of diode current slope trr = f(diF/dt) VR = 400 V, IF = 40 A 1E-8 1E-7 1E-6 1E-5 0.00010.001 0.01 0.1 1 1E-5 0.0001 0.001 0.01 0.1 400 500 600 700 800 900 1000 100 120 140 160 180 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 5 Revision 1.10 2022-06-24

Typical reverse recovery charge per leg as a function of diode current slope Qrr = f(diF/dt) VR = 400 V, IF = 40 A Typical reverse recovery current per leg as a function of diode current slope Irr = f(diF/dt) VR = 400 V, IF = 40 A 400 500 600 700 800 900 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 400 500 600 700 800 900 1000 Typical diode peak rate of fall of reverse recovery current per leg as a function of diode current slope dirr/dt = f(diF/dt) VR = 400 V, IF = 40 A Typical diode forward current per leg as a function of forward voltage IF = f(VF) 400 500 600 700 800 900 1000 -2500 -2250 -2000 -1750 -1500 -1250 -1000 -750 -500 -250 100 120 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 6 Revision 1.10 2022-06-24

Typical diode forward voltage per leg as a function of junction temperature VF = f(Tvj) 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 7 Revision 1.10 2022-06-24

4 Package outlines

28.06.2019 ISSUE DATE EUROPEAN PROJECTION SCALE 8mm PG-HSIP247-3-2 DOCUMENT NO. Z8B00195711 b D c E e L P A DIMENSIONS 2.662.16 5.44 22.70 0.50 1.10 15.70 2.26 3.50 18.01 16.96 1.30 0.70 22.90 3.70 2.46 18.21 15.90 17.16 MILLIMETERS MIN. 4.70 MAX. 5.18 4.90 3:1 2 3 4 5 6 7 A3 0.280.20 E1 13.68 13.88 P1 5.70 5.90 A4 1.501.30 A5 0.510.31 A6 1.901.70 A7 (0.25) b3 0.15 (2.88) (1.60) D2 2.34 2.54 D3 0.30 D4 4.35 4.55 D5 19.70 19.90 DIMENSIONS MILLIMETERS MIN. MAX. E2 (6.00) E3 3.24 3.44 (1.45)E5 4.39 4.59 E6 0.76 0.96 L2 1.50 1.70 Q 6.06 6.26 Figure 1 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 8 Revision 1.10 2022-06-24

5 Testing conditions

t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCC t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions Figure 2 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 9 Revision 1.10 2022-06-24

Revision history

Document revision Date of release Description of changes V2.1 2020-07-09 Target datasheet V2.2 2020-09-25 New marking description n/a 2020-11-30 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2022-06-24 Correction of package outline drawing on page 8 IDFW80C65D1 Emitter Controlled Rapid-1 Diode in Advanced Isolation Datasheet 10 Revision 1.10 2022-06-24

All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-06-24 Published by Infineon Technologies AG

81726 Munich, Germany

© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAL426-003 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.