IDFW60C65D1 INFINEON | Alldatasheet
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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 www.infineon.com 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation RapidSwitchingEmitterControlledDiodeinfullyisolatedpackage Features:
- 650VEmitterControlledtechnology
- Temperaturestablebehaviourofkeyparameters
- Lowforwardvoltage(VF)
- Lowreverserecoverycharge(Qrr)
- Lowreverserecoverycurrent(Irrm)
- Maximumjunctiontemperature175°C
- 2500VRMSelectricalisolation,50/60Hz,t=1min
- 100%testedisolatedmountingsurface
- Pb-freeleadplating
- RoHScompliant PotentialApplications:
- AirConditioning
- GPD(GeneralPurposeDrives)
- IndustrialSMPS Packagepindefinition:
- Pin1-anode(A1)
- Pin2-cathode(C)
- Pin3-anode(A2) ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 A1C1C2A2 A1 A2 C Fully isolated package TO-247 KeyPerformanceandPackageParameters Type Vrrm If Vf,Tvj=25°C Tvjmax Marking Package IDFW60C65D1 650V 2x 30A 1.45V 175°C C60ED1 PG-TO247-3-AI
Datasheet 2 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation TableofContents
Datasheet 3 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation MaximumRatings(perleg) Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax Th=25°C Th=65°C IF 56.0 43.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Diode surge non repetitive forward current Th=25°C,tp=10.0ms,sinehalfwave IFSM 240.0 A PowerdissipationTh=25°C PowerdissipationTh=65°C Ptot 100.0 73.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm IsolationvoltageRMS,f=50/60Hz,t=1min1) Visol 2500 V ThermalResistances(perleg) Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics Diode thermal resistance,2) junction - heatsink Rth(j-h) - 1.37 1.50 K/W Thermal resistance junction - ambient Rth(j-a) - - 65 K/W ElectricalCharacteristics(perleg),atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Diode forward voltage VF IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.45 1.42 1.40 1.75 V Reverse leakage current3) IR VR=650V Tvj=25°C Tvj=175°C 1200 µA 1) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 2) At force on body F = 500N, Ta = 25°C 3) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
Datasheet 4 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH SwitchingCharacteristics(perleg),InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 65 - ns Diode reverse recovery charge Qrr - 0.76 - µC Diode peak reverse recovery current Irrm - 17.6 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -1360 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. Diode reverse recovery time trr - 112 - ns Diode reverse recovery charge Qrr - 0.47 - µC Diode peak reverse recovery current Irrm - 4.5 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -655 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. SwitchingCharacteristics(perleg),InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr - 102 - ns Diode reverse recovery charge Qrr - 1.80 - µC Diode peak reverse recovery current Irrm - 25.9 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -995 - A/µs Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. Diode reverse recovery time trr - 148 - ns Diode reverse recovery charge Qrr - 0.98 - µC Diode peak reverse recovery current Irrm - 8.5 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -485 - A/µs Tvj=125°C, VR=400V, IF=30.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5.
Figure 9. Typicaldiodeforwardvoltageperlegasa
Datasheet 8 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation REVISION 05.06.2018 ISSUE DATE EUROPEAN PROJECTION SCALE 8mm PG-TO247-3-AI (PGHSIP2473) DOCUMENT NO. Z8B00186434 b D c E e L Q øP A DIMENSIONS 2.592.23 5.44 22.20 0.50 1.10 15.70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 15.90 17.16 MILLIMETERS MIN. 4.70 MAX. 5.18 4.90 3:1 2 3 4 5 6 7 A3 0.280.20 E1 13.68 13.88 øP1 5.70 5.90 Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
Datasheet 9 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions
Datasheet 10 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation RevisionHistory IDFW60C65D1 Revision:2019-05-20,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-06-20 Final data sheet 2.2 2019-05-20 New marking description
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