IDFW40E65D1E INFINEON | Alldatasheet
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Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 www.infineon.com 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation Rapidswitchingemittercontrolleddiodeinfullyisolatedpackage Features:
- 650VEmitterControlledtechnology
- Temperaturestablebehaviorofkeyparameters
- Lowforwardvoltage(VF)
- Lowreverserecoverycharge(Qrr)
- Lowreverserecoverycurrent(Irrm)
- Softnessfactor>1
- Maximumjunctiontemperature175°C
- 2500VRMSelectricalisolation,50/60Hz,t=1min
- 100%testedisolatedmountingsurface
- Pb-freeleadplating;RoHScompliant PotentialApplications:
- AirConditioningPFC
- GeneralPurposeDrives(GPD) Packagepindefinition:
- Pin1-notconnected
- Pin2-cathode
- Pin3-anode ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 A C Fully isolated package TO-247 KeyPerformanceandPackageParameters Type Vrrm If Vf,Tvj=25°C Tvjmax Marking Package IDFW40E65D1E 650V 40A 1.7V 175°C D40E65D1E PG-TO247-3-AI
Datasheet 2 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation TableofContents
Datasheet 3 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax Th=25°C Th=65°C IF 42.0 35.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A PowerdissipationTh=25°C PowerdissipationTh=65°C Ptot 78.0 57.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw, PG-TO247-3-AI Maximum of mounting processes: 3 M 0.6 Nm IsolationvoltageRMS,f=50/60Hz,t=1min1) Visol 2500 V ThermalResistance Value min. typ. max. Parameter Symbol Conditions Unit RthCharacteristics Diode thermal resistance,2) junction - heatsink Rth(j-h) - 1.75 1.92 K/W Thermal resistance junction - ambient Rth(j-a) - - 65 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Diode forward voltage VF IF=40.0A Tvj=25°C Tvj=175°C 1.70 1.75 2.10 V Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C 350 µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH 1) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. 2) At force on body F = 500N, Ta = 25ºC
Datasheet 4 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 76 - ns Diode reverse recovery charge Qrr - 0.57 - µC Diode peak reverse recovery current Irrm - 11.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -885 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=1000A/µs, Lσ=75nH, Cσ=30pF, Switch IKFW50N60DH3 Diode reverse recovery time trr - 232 - ns Diode reverse recovery charge Qrr - 0.52 - µC Diode peak reverse recovery current Irrm - 6.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -130 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=300A/µs, Lσ=75nH, Cσ=30pF, Switch IKFW50N60DH3 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 106 - ns Diode reverse recovery charge Qrr - 1.51 - µC Diode peak reverse recovery current Irrm - 20.0 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -760 - A/µs Tvj=175°C, VR=400V, IF=40.0A, diF/dt=1000A/µs, Lσ=75nH, Cσ=30pF, Switch IKFW50N60DH3 Diode reverse recovery time trr - 228 - ns Diode reverse recovery charge Qrr - 1.33 - µC Diode peak reverse recovery current Irrm - 9.8 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -160 - A/µs Tvj=175°C, VR=400V, IF=40.0A, diF/dt=300A/µs, Lσ=75nH, Cσ=30pF, Switch IKFW50N60DH3
Figure 9. Typicaldiodeforwardvoltageasafunctionof
Datasheet 8 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation REVISION 18.08.2017 ISSUE DATE EUROPEAN PROJECTION SCALE 8mm PG-TO247-3-AI (PGHSIP2473) DOCUMENT NO. Z8B00186434 b D c E e L Q øP A DIMENSIONS 2.592.23 5.44 22.20 0.50 1.10 10.70 2.76 5.96 3.50 18.31 16.96 1.30 0.70 22.40 6.36 3.70 2.96 18.91 10.90 17.16 MILLIMETERS MIN. 4.70 MAX. 5.18 4.90 3:1 2 3 4 5 6 7 A3 0.280.20 E1 13.68 13.88 øP1 5.70 5.90 Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
Datasheet 9 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation t a b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE t t 90% VGE VGE(t) t t tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. I (t)C Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching) s s r t t t Q Q Q rr a b rr a b = + = + Q a Qb V (t)CE VGE(t) I (t)C V (t)CE T esting Conditions
Datasheet 10 V2.2 2017-10-27 IDFW40E65D1E EmitterControlledDiodeRapid1AdvancedIsolation RevisionHistory IDFW40E65D1E Revision:2017-10-27,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-09-21 Final data sheet 2.2 2017-10-27 Update condition Fig.2
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