IDD09E60G INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
20131205Rev. 2.4 Page 1 IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM 600 V IF 9 A VF 1.5 V Tjmax 175 °CFeature
- 600V Emitter Controlled technology
- Fast recovery
- Soft switching
- Low reverse recovery charge
- Low forward voltage
- 175°C operating temperature
- Easy paralleling Pin 1 PIN 2,4 PIN 3 NC C A Marking D09E60 Type Package Ordering Code IDD09E60 PG-TO252-3 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 19.3 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 40 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 29.5 Power dissipation TC=25°C TC=90°C Ptot 57.7 32.7 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature reflow soldering, MSL3 TS 260 °C Parameter Symbol Value Unit Repetitive peak reverse voltage VR R M 600 V Continuous forward current TC = 25C TC = 90C IF 19.3 A Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave IF S M 40 A Maximum repetitive forward current TC = 25C, tp limited by tj,max, D = 0.5 IF R M 29.5 A Power dissipation TC = 25C TC = 90C Pt o t 57.7 32.7 W Operating junction temperature Tj -40…+175 °C Storage temperature Ts t g -55...+150 Soldering temperature 1.6mm (0.063 in.) from case for 10 s TS 260
20131205Rev. 2.4 Page 2 IDD09E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.6 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 750 µA Forward voltage drop IF=9A, Tj=25°C IF=9A, Tj=150°C VF 1.5 1.5 V 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
20131205Rev. 2.4 Page 3 IDD09E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=9A, d iF/d t =800A/µs, Tj=25°C VR=400V, IF=9A, d iF/d t =800A/µs, Tj=125°C VR=400V, IF=9A, d iF/d t =800A/µs, Tj=150°C trr 110 112 ns Peak reverse current VR=400V, IF = 9 A, d iF/d t =800A/µs, Tj=25°C VR=400V, IF =9A, d iF/d t =800A/µs, Tj=125°C VR=400V, IF =9A, d iF/d t =800A/µs, Tj=150°C Irrm 10.2 11.8 12.3 A Reverse recovery charge VR=400V, IF=9A, d iF/d t =800A/µs, Tj=25°C VR=400V, IF =9A, d iF/d t =800A/µs, Tj=125°C VR=400V, IF =9A, d iF/d t =800A/µs, Tj=150°C Qrr 343 585 612 nC Reverse recovery softness factor VR=400V, IF=9A, d iF/d t =800A/µs, Tj=25°C VR=400V, IF=9A, d iF/d t =800A/µs, Tj=125°C VR=400V, IF=9A, d iF/d t =800A/µs, Tj=150°C S 5.5 5.7
20131205Rev. 2.4 Page 4 IDD09E60
2 Diode forward current
IF = f(TC) parameter: Tj≤ 175°C 25 50 75 100 125 °C 175 TC A IF
1 Power dissipation
Ptot = f ( TC) parameter: Tj ≤ 175 °C 25 50 75 100 125 °C 175 TC W Ptot 3 Typ. diode forward current IF = f ( VF) 0 0.5 1 1.5 V 2.5 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f ( Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 V VF 4,5A 18A
20131205Rev. 2.4 Page 5 IDD09E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 d iF/d t 100 150 200 250 ns 350 trr 18A 4.5A 6 Typ. reverse recovery charge Qrr= f (d iF/d t ) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 d iF/d t 300 350 400 450 500 550 600 650 700 nC 800 Qrr 4.5A 18A 7 Typ. reverse recovery current Irr = f (d iF/d t ) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 d iF/d t A Irr 18A 4.5A 8 Typ. reverse recovery softness factor S = f(d iF/d t ) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 d iF/d t S 18A 4.5A
20131205Rev. 2.4 Page 6 IDD09E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 K/W IDD09E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
20131205Rev. 2.4 Page 7 IDD09E60 PG-TO252 -3
20131205Rev. 2.4 Page 8 IDD09E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.