IDD06E60_07 INFINEON | Alldatasheet

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Technical content

2007-04-24Rev.2.2 Page 1 IDD06E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 6 A VF 1.5 V Tjmax 175 °C Feature

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175°C operating temperature
  • Easy paralleling Pin 1 PIN 2,4 PIN 3 NC C A Marking D06E60 Type Package Ordering Code IDD06E60 PG-TO252-3-1 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 14.7 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 29 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 22 Power dissipation TC=25°C TC=90°C Ptot 46.8 26.6 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature reflow soldering, MSL3 TS 260 °C

2007-04-24Rev.2.2 Page 2 IDD06E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.2 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 500 µA Forward voltage drop IF=6A, Tj=25°C IF=6A, Tj=150°C VF 1.5 1.5 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2007-04-24Rev.2.2 Page 3 IDD06E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs , Tj=125°C VR=400V, IF=6A, di/dt=550A/µs , Tj=150°C trr 100 105 ns Peak reverse current VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs, Tj=125°C VR=400V, IF=6A, di/dt=550A/µs, Tj=150°C Irrm 6.5 7.4 7.9 A Reverse recovery charge VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs, Tj=125°C VR=400V, IF=6A, di/dt=550A/µs, Tj=150°C Qrr 240 360 400 nC Reverse recovery softness factor VR=400V, IF=6A, diF/dt=550A/µs, Tj=25°C VR=400V, IF=6A, diF/dt=550A/µs, Tj=125°C VR=400V, IF=6A, diF/dt=550A/µs, Tj=150°C S 4.8 4.9

2007-04-24Rev.2.2 Page 4 IDD06E60

2 Diode forward current

IF = f(TC) parameter: Tj ≤ 175°C 25 50 75 100 125 °C 175 TC A IF

1 Power dissipation

P tot = f (TC) parameter: Tj ≤ 175°C 25 50 75 100 125 °C 175 TC W Ptot 3 Typ. diode forward current I F = f (VF) 0 0.5 1 1.5 V 2.5 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 V VF 12A

2007-04-24Rev.2.2 Page 5 IDD06E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 A/µs 800 diF/dt 100 150 200 ns 300 trr 12A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 A/µs 800 diF/dt 250 275 300 325 350 375 400 425 450 475 500 nC 550 Qrr 12A 7 Typ. reverse recovery current I rr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 A/µs 800 diF/dt A Irr 12A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 12A

2007-04-24Rev.2.2 Page 6 IDD06E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IDD06E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2007-04-24Rev.2.2 Page 7 IDD06E60 PG-TO252 (D-Pak) symbol [mm] inch] m i nm a xm i nm a x A 6.40 6.73 0.2520 0.2650 B 5.25 5.50 0.2067 0.2165 D 0.63 0.89 0.0248 0.0350 E F 2.19 2.39 0.0862 0.0941 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T 0.26 1.02 0.0102 0.0402 U- - - - 2.28 0.2520 dimensions

2007-04-24Rev.2.2 Page 8 IDD06E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.