IDC73D120T8H INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Infineon Technologies AG
  • PDF pages: 8

Technical content

Features

  • V RRM = 1200 V
  • I Fn = 150 A
  • 1200 V Emitter Controlled 4 technology 120 µm chip
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient Potential applications
  • Medium / high power drives Product validation
  • Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22

Description

Recommended for:

  • Medium / high power modules Type Die size Delivery form IDC73D120T8H 9 mm x 8.15 mm Sawn on foil IDC73D120T8H Diode Chip in Emitter Controlled 4 High Power Technology Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 www.infineon.com 2022-10-27

Diode Chip in Emitter Controlled 4 High Power Technology Table of contents Datasheet 2 Revision 1.10 2022-10-27

1 Mechanical parameters

Table 1 Mechanical parameters Parameter Values Die size 9 mm x 8.15 mm Area total 73.35 mm² Anode pad size See chip drawing Silicon thickness 120 µm Wafer size 200 mm Maximum possible chips per wafer 358 Passivation frontside Photoimide Pad metal 3.2 µm AlSiCu Backside metal Ni Ag - system; To achieve a reliable solder connection it is strongly recommended not to consume the Ni - layer completely during production process Die attach Electrically conductive epoxy glue and soft solder Frontside interconnect Wire bond: Al ≤ 500 µm Reject ink dot size (valid for inked delivery form only) Ø 0.65 mm; max. 1.2 mm Storage environment (<12 months) for original and sealed MBB bags Ambient atmosphere air, temperature 17°C – 25°C Storage environment (<12 months) for open MBB bags Acc. IEC 62258-3; Section 9.4 Storage Environment IDC73D120T8H Diode Chip in Emitter Controlled 4 High Power Technology Datasheet 3 Revision 1.10 2022-10-27

2 Characteristics

Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Continuous forward current, limited by Tvjmax 1) IF - A Maximum repetitive forward current, tp limited by Tvjmax IFRM 300 A Junction temperature range Tvj -40...175 °C Operating junction temperature Tvjop -40...150 °C 1) Depending on thermal properties of assembly. Table 3 Static characteristics (tested on wafer), Tvj = 25°C Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 45 A 1.18 1.35 1.52 V Reverse leakage current IR VR = 1200 V 26 µA Cathode-anode breakdown voltage VBR IR = 0.25 mA 1200 V Table 4 Electrical characteristics Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Diode forward voltage VF IF = 150 A Tvj = 25 °C 1.55 1.9 2.25 V Tvj = 150 °C 1.85 Note: In general, from reliability and lifetime point of view, the lower the operating junction temperature and/or the applied voltage, the greater the expected lifetime of any semiconductor device. For "Maximum ratings" and "Electrical characteristics": Not subject to production test, specified by design. IDC73D120T8H Diode Chip in Emitter Controlled 4 High Power Technology Datasheet 4 Revision 1.10 2022-10-27

3 Chip drawing

Diode Chip in Emitter Controlled 4 High Power Technology Datasheet 5 Revision 1.10 2022-10-27

4 Bare die product specifics

  • Switching characteristics and thermal properties are dependent on module design and mounting technology and can therefore not be specified for a bare die.
  • Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics, which are relevant for the application at package level, including RBSOA and SCSOA.
  • AQL 0.65 for visual inspection according to failure catalogue
  • Electrostatic discharge sensitive device according to MIL-STD 883
  • The example application may be subject to change without prior notice. It is intended for information purposes only, and should not be interpreted as a commitment.
  • Example application: FF600R12IE4V IDC73D120T8H Diode Chip in Emitter Controlled 4 High Power Technology

Datasheet 6 Revision 1.10 2022-10-27

Revision history

Document revision Date of release Description of changes 1.10 2022-10-27 Change of chip drawing 2.0 Final data sheet 22.08.2016 2.1 Editorial changes 09.04.2021 IDC73D120T8H Diode Chip in Emitter Controlled 4 High Power Technology Datasheet 7 Revision 1.10 2022-10-27

All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-10-27 Published by Infineon Technologies AG

81726 Munich, Germany

© 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABF276-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.