IDC73D120T6H INFINEON | Alldatasheet
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Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 2 6.06.07 Diode EMCON 4 High Power Chip This chip is used for:
- medium / high power modules FEATURES:
- 1200V EMCON 4 technology
- soft, fast switching
- low reverse recovery charge
- small temperature coefficient Applications:
- medium / high power drives A C Chip Type VR IF Die Size Package IDC73D120T6H 1200V 150A 8.15 x 9.00 mm2 sawn on foil MECHANICAL PARAMETER: Raster size 8.15 x 9.00 Area total / active 73.35 / 59.89 Anode pad size 7.196 x 8.046 mm2 Thickness 120 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 187 pcs Passivation frontside Photoimide Pad metall 3200 nm AlSiCu Backside metall Ni Ag – system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue o r solder Wire bond Al, ≤ 500µm Reject ink dot size ∅ 0.65mm; max 1.2mm Recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 2 6.06.07 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage VRRM 1200 V Continuous forward current limited by Tjmax IF 1 ) Maximum repetitive forward current limited by Tjmax IFRM 300 A Maximum junction and storage temperature Tvj,max , Tstg -40...+175 °C Reverse bias safe o perating area 2) (RBSOA) IF,max = 300A, VR,max = 1200V, Tvj,op ≤ 150°C, Pmax = tbd kW 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation Static Electrical Characteristics (tested on wa fer), Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current IR VR=12 00V Tj=25 ° C 26 µA Cathode-Anode breakdown Voltage VBr IR= 0. 25mA Tj=25°C 1200 V Forward voltage drop VF IF=1 50A Tj=25 ° C 1.55 1.9 2.25 V Dynamic Electrical Characteristics inductive load (not subject to production test - verified by design/characterization ) Value 2) Parameter Symbol Conditions min. Typ. max. Unit Peak reverse recovery current IR M IF=A di/dt=A/ ms VR=V VGE =-15 V Tj = 25 °C Tj = 125 °C Tj = 150 °C tbd A Reverse recovery charge Qr IF=A di/dt=A/ ms VR=V VGE =-15 V Tj = 25 °C Tj = 125 °C Tj = 150 °C tbd µC Reverse recovery energy Erec IF=A di/dt=A/ ms VR=V VGE =-15 V Tj = 25 °C Tj = 125 °C Tj = 150 °C tbd mJ 2) values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 2 6.06.07 CHIP DRAWING:
Edited by INFINEON Technologies, AIM PMD D CID T, L4675A, Edition 0.9, 2 6.06.07 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL -STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG
81726 Munich, Germany
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