IDC04S60C INFINEON | Alldatasheet

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Edited by INFINEON Technologies, AIM PMD D CID CLS , Edition 1, 05.04.2006 2nd generation thinQ!TM SiC Schottky Diode Applications:

  • SMPS, PFC, snubber FEATURES:
  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • No forward recovery
  • High surge current capability A C Chip Type VBR IF Die Size Package IDC04S60C 600V 4A 1.146 x 0.968 mm2 sawn on foil MECHANICAL PARAMETER: Raster size 1.146x 0.968 Anode pad size 0.909 x 0.731 mm Area total / active 1.11 / 0.74 mm2 Thickness 355 µm Wafer size 75 mm Flat position 0 deg Max. possible chips per wafer 3461 pcs Passivation frontside Photoimide Anode metalization 3200 nm Al Cathode metalization 1400 nm Ni Ag – system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, ≤ 350µm Reject Ink Dot Size ∅ ≥ 0.3 mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 2 3°C

Edited by INFINEON Technologies, AIM PMD D CID CLS , Edition 1, 05.04.2006 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage VRRM 600 DC blocking voltage VDC 600 V Continuous forward current limited by Tjmax IF Surge non repetitive forward current sine halfwave IF,SM TC =25° C, tP =10 ms 32 Repetitive peak forward current limited by Tjmax IF,RM TC = 100° C, Tj=150 ° C, D=0.1 18 Non-repetitive peak forward current IF,max TC =25° C, tp=10µs 132 A Operating junction and storage temperature Tj , Tstg -55...+175 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse current IR VR=600V Tj=25 ° C 0.5 50 µA Diode forward voltage VF IF= 4A Tj=25 ° C 1.7 1.9 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit Total capacitive charge QC Tj = 150 °C nC Switching time 1) tc IF <=I F,max di/dt=200A/ ms V R=400V Tj = 150 °C <10 ns VR= 1V 130 VR=30 0V 20 Total capacitance C f=1MHz VR=6 00V 20 pF 1) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from t rr which is dependent on T j, ILOAD and di/dt. No reverse recovery time constant t rr due to absence of minority carrier injection

Edited by INFINEON Technologies, AIM PMD D CID CLS , Edition 1, 05.04.2006 CHIP DRAWING:

Edited by INFINEON Technologies, AIM PMD D CID CLS , Edition 1, 05.04.2006 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES IDT04S60C Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL -STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG

81726 Munich, Germany

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