IDP45E60 INFINEON | Alldatasheet

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Technical content

2003-07-31Rev.2 Page 1 IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF 45 A VF 1.5 V Tjmax 175 °C Feature

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175°C operating temperature
  • Easy paralleling P-TO220-3.SMD P-TO220-2-2. Pin 1 PIN 2 PIN 3 C A - NC C A Marking D45E60 D45E60 Type Package Ordering Code IDP45E60 P-TO220-2-2. Q67040-S4469 IDB45E60 P-TO220-3.SMD Q67040-S4375 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 162 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 111.5 Power dissipation TC=25°C TC=90°C Ptot 187 106 W Operating and storage temperature Tj , Tstg -55...+175 °C Soldering temperature 1.6mm(0.063 in.) from case for 10s TS 255 °C

2003-07-31Rev.2 Page 2 IDP45E60 IDB45E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.8 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 3000 µA Forward voltage drop IF=45A, Tj=25°C IF=45A, Tj=150°C VF 1.5 1.5 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2003-07-31Rev.2 Page 3 IDP45E60 IDB45E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=45A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=45A, diF/dt=1000A/µs, Tj=150°C trr 140 185 195 ns Peak reverse current VR=400V, IF = 45A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =45A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =45A, diF/dt=1000A/µs, Tj=150°C Irrm 28.1 A Reverse recovery charge VR=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =45A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =45A, diF/dt=1000A/µs, Tj=150°C Qrr 1400 2650 2900 nC Reverse recovery softness factor VR=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=45A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=45A, diF/dt=1000A/µs, Tj=150°C S 3.1 4.2 4.4

2003-07-31Rev.2 Page 4 IDP45E60 IDB45E60

2 Diode forward current

IF = f(TC) parameter: Tj≤ 175°C 25 50 75 100 125 °C 175 TC A IF

1 Power dissipation

Ptot = f (TC) parameter: Tj ≤ 175 °C 25 50 75 100 125 °C 175 TC 105 120 135 150 165 W 195 Ptot 3 Typ. diode forward current IF = f (VF) 0 0.5 1 1.5 V 2.5 VF 100 A 140 IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 1.8 V 2.4 VF 22,5A 45A 90A

2003-07-31Rev.2 Page 5 IDP45E60 IDB45E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 100 150 200 250 300 350 ns 450 trr 90A 45A 22.5A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 1000 1500 2000 2500 3000 nC 4000 Qrr 45A 90A 22,5A 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 90A 45A 22.5A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 3.5 4.5 5.5 6.5 S 22,5A 45A 90A

2003-07-31Rev.2 Page 6 IDP45E60 IDB45E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IDP45E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2003-07-31Rev.2 Page 7 IDP45E60 IDB45E60 TO-220-2-2 symbol [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L M N P 1.10 1.40 0.0433 0.0551 T U V W X 0.00 0.40 0.0000 0.0157 0.26 typ.6.6 typ. 0.51 typ.13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ.1.05 typ. A U V W G M T J F L X P D C K N BH E

2003-07-31Rev.2 Page 8 IDP45E60 IDB45E60 symbol [mm] [inch] min max min max A 9.80 10.00 0.3858 0.3937 B C 1.25 1.75 0.0492 0.0689 D 0.95 1.15 0.0374 0.0453 E F 0.72 0.85 0.0283 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 3.30 3.90 0.1299 0.1535 R S 1.70 2.50 0.0669 0.0984 T 0.50 0.65 0.0197 0.0256 U V W X Y Z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8° max 8° max dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. TO-220-3-45 (P-TO220SMD)

2003-07-31Rev.2 Page 9 IDP45E60 IDB45E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.