IDB30E120_07 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

2007-09-01Rev.2.2 Page 1 IDB30E120 Fast Switching EmCon Diode Product Summary VRRM 1200 V IF 30 A VF 1.65 V Tjmax 150 °C Feature

  • 1200 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • Easy paralleling PG-TO263-3-2 Pin 1 PIN 2 PIN 3 NC C A Marking D30E120 Type Package Ordering Code IDB30E120 PG-TO263-3-2 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current TC=25°C TC=90°C IF A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 102 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 76.5 Power dissipation TC=25°C TC=90°C Ptot 138 W Operating and storage temperature Tj , Tstg -55...+150 °C Soldering temperature reflow soldering, MSL1 TS 245 °C

2007-09-01Rev.2.2 Page 2 IDB30E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.9 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=1200V, Tj=25°C VR=1200V, Tj=150°C IR 100 2500 µA Forward voltage drop IF=30A, Tj=25°C IF=30A, Tj=150°C VF 1.65 1.7 2.15 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2007-09-01Rev.2.2 Page 3 IDB30E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C VR=800V, IF=30A, diF/dt=850A/µs, Tj=125°C VR=800V, IF=30A, diF/dt=850A/µs, Tj=150°C trr 243 355 380 ns Peak reverse current VR=800V, IF = 30 A, diF/dt=850A/µs, Tj=25°C VR=800V, IF =30A, diF/dt=850A/µs, Tj=125°C VR=800V, IF =30A, diF/dt=850A/µs, Tj=150°C Irrm 23.7 28.3 29.5 A Reverse recovery charge VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C VR=800V, IF =30A, diF/dt=850A/µs, Tj=125°C VR=800V, IF =30A, diF/dt=850A/µs, Tj=150°C Qrr 2630 4700 5200 nC Reverse recovery softness factor VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C VR=800V, IF=30A, diF/dt=850A/µs, Tj=125°C VR=800V, IF=30A, diF/dt=850A/µs, Tj=150°C S 7.4 7.5

2007-09-01Rev.2.2 Page 4 IDB30E120

2 Diode forward current

IF = f(TC) parameter: Tj≤ 150°C 25 50 75 100 °C 150 TC A IF

1 Power dissipation

P tot = f (TC) parameter: Tj ≤ 150°C 25 50 75 100 °C 150 TC 100 110 120 W 140 Ptot 3 Typ. diode forward current I F = f (VF) 0 0.5 1 1.5 2 V 3 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 20 60 100 °C 160 Tj 1.2 1.4 1.6 1.8 V 2.4 VF 15A 30A 60A

2007-09-01Rev.2.2 Page 5 IDB30E120 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 200 300 400 500 600 700 800 900 ns 1100 trr 60A 30A 15A 6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 800V, Tj = 125 °C 200 300 400 500 600 700 800 A/µs 1000 diF/dt 2500 3000 3500 4000 4500 5000 5500 nC 6500 Qrr 15A 30A 60A 7 Typ. reverse recovery current I rr = f (diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt A Irr 60A 30A 15A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 800V, Tj = 125°C 200 300 400 500 600 700 800 A/µs 1000 diF/dt S 60A 30A 15A

2007-09-01Rev.2.2 Page 6 IDB30E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0s tp -410 -310 -210 -110 010 110 K/W IDP30E120 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2007-09-01Rev.2.2 Page 7 IDB30E120

2007-09-01Rev.2.2 Page 8 IDB30E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.