D7509 ETC | Alldatasheet

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Technical content

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4 Electrical Characteristics

4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)

D7509/ID7509/ED7509 FD7509 Drian-SourceVoltage VDS 75 V Gate-SourceVoltage VGS ±25 V DrainCurrent(continuous)(Note3) ID 80 A DrainCurrent(continuous)(T=100℃)(Note3) ID(100℃) 65 A DrainCurrent(Pulsed)(Note4) IDM 320 A AvalancheCurrent(Note5) IAS 25 A Single PulseAvalancheEnergy(Note5) EAS 525 mJ MaximumPower Dissipation Ta=25℃ Ptot 2 2 W Tc=25℃ Ptot 210 85 W OperatingJunctionTemperature Range Tj -55～175 ℃ StorageTemperature Range Tstg -55～175 ℃ HighTemperature(tin solder) TL 300 ℃

4.2 Thermal Characteristics

D7509/ID7509/ED7509 FD7509 ThermalResistance,JunctiontoCase-sink RthJC 0.71 1.76 ℃/W ThermalResistance,JunctiontoAmbient RthJA 75 75 ℃/W

1 Description

These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHSstandard.

2 Features

  • LowOnResistance
  • LowGateCharge
  • FastSwitching
  • LowReverseTransfer Capacitances
  • 100% SinglePulseAvalancheEnergyTest
  • 100% ΔVDS Test

3 Applications

  • AC-DCSwitchingPower
  • PulseWidth ModulationCircuit
  • Load Switching
  • Inverter VDS=75V RDS(on) （TYP)=6.7mΩ ID=80A TO-262 TO-263 TO-220C TO-220F

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4.3 Electrical Characteristics (Tc=25℃,unlessotherwise noted)

Parameter Symbol TestCondition Value UnitsMin Typ Max Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 75 81 -- V Zero Gate Voltage Drain Current IDSS VDS=75V,VGS=0V,TC=25℃ -- -- 1 μA VDS=60V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-BodyLeakage Current IGSS VGS=±25V,VDS=0V -- -- ±100 nA On Characteristics(Note3) Gatethresholdvoltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-source on Resistan ce RDS(on) VGS=10V,ID=40A -- 6.7 9 mΩ Dynamic Characteristics(Note4) InputCapacitance Ciss VGS=0V,VDS=25V,f=1.0MHz -- 4286 -- pFOutput Capacitance Coss -- 373 -- Reverse Transfer Capaci tance Crss -- 280 -- Gate Resisitance RG VDD=0V,VGS=0V,F=1MHz -- 1.3 -- Ω Switching Characteristics(note4) Turn-on Delay Time td(on) ID=40A, VDD=37.5V, VGS=10V, RGEN=6Ω -- 25 -- nS Turn-onRiseTime tr -- 42 -- nS Turn-off Delay Time td(off) -- 62 -- nS Turn-offFallTime tf -- 19 -- nS TotalGate Charge Qg ID=40A,VDD=60V,VGS=10V -- 108 -- nCGate-to-Source Charge Qgs -- 21 -- Gate-to-Drain(“Miller”)Cha rge Qgd -- 40 -- Drain-Source Diode Characteristics Diode Forward Voltage(Not e 3) VSD VGS=0V,IS=40A -- -- 1.3 V Diode Forward Current(Not e 2) IS -- -- 80 A ReverseRecoveryTime trr TJ=25℃,IF=40A, dIF/dt=100A/μS,VGS=0V -- 62 -- nS Reverse Recovery Charge Qrr -- 127 -- nC Notes： 1:Repetitiverating,pulsewidthlimitedbymaximumjunctiontemperature. 2:SurfacemountedonFR4Board,t≤10sec. 3:Pulsewidth≤300μs,dutycycle≤2%. 4:Guaranteedbydesign,notsubjecttoproduction. 5:L=0.5mH,ID=46A,VDD=50V,VGATE=75V,StartTJ=25℃.

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5 Typical characteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

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7 Product Names Rules

8 Product Specifications and Packaging Models

ProductModel PackageType Mark Name RoHS Package Quantity D7509 TO-220C D7509 Pb-free Tube 1000/box FD7509 TO-220F FD7509 Pb-free Tube 1000/box ID7509 TO-262 ID7509 Pb-free Tube 1000/box ED7509 TO-263 ED7509 Pb-free Tape ＆ Reel 800/box RatedVoltageCode With2Digital,ForExample: 60onbehalfof600V, 06onbehalfof60v SpecialFunctionCode Eonbehalfofbuild-inESD NothingonbehalfofnotESD PackagingCode 220F:F 220:Nothing 251: B 252:D 262: I 263:E RatedCurrentCode With1-2Digital, ForExample: 4onbehalfof4A, 10onbehalfof10A, 08onbehalfof0.8A ChannelPolarityCode NonbehalfofNchannel PonbehalfofPchannel FDXXNEXX LV.MOSFETCode:D HV.MOSFETNoCode

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9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 ROUM SemiconductorTechnology CO.,LTD.reserves theright tochangethe specificationwithout prior notice!Thecustomershould obtainthe latestversionofthe informationbefore makingthe orderandverify thatthe informationiscomplete and up todate.  Itis the responsibility ofthe purchaserforany failure orfailure ofany semiconductorproduct under certain conditions.Itisthe responsibilityofthe purchasertocomply with safetystandards andto take safety measuresin the system designandmachinemanufacturing of Romaproducts in order to avoidpotentialrisk offailure.Injuryorpropertydamage.  Productpromotion isendless,ourcompany willbe dedicated toprovidecustomerswith better products.

11 Appendix

Revision history: Date REV. Description Page 2017.03.09 1.0 Original