ID100 LINEAR | Alldatasheet
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Technical content
FEATURES
DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation 300mW Maximum Currents Forward Current 20mA Reverse Current 100µA Maximum Voltages Reverse Voltage 30V Diode to Diode Voltage ±50V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVR Reverse Breakdown Voltage 30 IR = 1µA VF Forward Voltage 0.8 1.1 V IF = 10mA
0.1 VR = 1V
IR Reverse Leakage Current 2.0 10 |IR1-IR2| Differential Leakage Current 3 pA VR = 10V Crss Total Reverse Capacitance2 0.75 1 pF VR = 10V, f = 1MHz ID100 NC NC BOTTOM VIEW TO-78 A1 A2 ID101 NC BOTTOM VIEW TO-71 62A1 NC Linear Integrated Systems ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Figure 1. Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by Diodes ID100 D1 and D2. Common Mode Input voltage limited by Diodes ID100 D3 and D4 to ±15V. Figure 2. Sample and Hold Circuit voltages fed capacitively from the ID100 switch gate.
6 LEADS
- Absolute maximum ratings are limiting values above which serviceability may be impaired.
- Design reference only, not 100% tested.
- Pins 3 & 5 on ID100 and ID101 must not be connected, in any fashion or manner, to any circuit or node.
otherwise under any patent or patent rights of Linear Integrated Systems.