ID100 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SCRs 1D100-1D106 | .5 Amp, Planar © Voltage Ratings: to 400V This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs © Maximum Gate Trigger Current: 200.4. designed for low-voltage, low-current sensing application. The ID100 Series is © Hermetically Sealed TO-18 Metal Can packaged in a TO-18 metal case with Microsemi’s unique oxide passivated junctions, price range. ‘Typical applications include lamp driving, relay driving, sensor, puise-generating and ABSOLUTE MAXIMUM RATINGS: On-State Current, |, 75°C Ambient 250mA, Repetitive Peak On-State Current, ry 6A Peak One Cycle Surge (Non-Rep.) On-State Current, Irs. up to 30A Peak Gate Current, ley, 250m, Reverse Gate Voltage, Vis» 6v. Storage Temperature Range —65°C to +150°C. Operating Temperature Range —65°C to 4+125°C. MECHANICAL SPECIFICATIONS 1100-10106 70-18 | + ate qpewe if = wae a [_]_wenesT aunimerens | ! — — carnove—A PA = (xT ayeT95 OIA [452-495 0m A ar) PAOD (ef asa 1 Microsemi Corp. Watertown as Pocenn neers
ELECTRICAL SPECIFICATIONS (at 25°C unless noted) a [aA] Venus = Rating, Roy = 1K, T= 125°, [TOO DION Off-State Current 100 | uA | Voeu = Rating, Rey = 1K, T = 125°C, ID105-1D106 nee. , TO [~50 | vA | Venus = Rating, Rex = 1K, T = 12°C, [D1001D104 Reversing Current a | 15 | 100 | uA | Vyp,, = Rating, Ro, = 1K, T = 125°C, 1D105-10106 50 | 200 | uA | V, = SV, Ros = 10K Gate Trigger Current lor — | 500 | uA | V, = 5V, Rec = 10K, T = —40°C 08 | V_| WV) =8V, Res = 1008 Gate Trigger Voltage v, 19 | v | v,=5v,Rog = 1000, aoc a “ V_| Vo = 5V, Reg = 1000, T= 125°C Peak On-State Voltage [Vu | — | — | 17 | Vv [t=] Amp Pulse TO | 50 [mA | Re = 1K —_| 100 | ma | Ry = 1K, T= —a0°C | turontime te 0 Ts Pig = toma, = TAY, = 300 aati + 8.0 ‘S I, = Ip = 1A, Roy = 1K, 1D100-1D104 Circuit Commutated Turn-off Time | t, [=| 160 [= | ye | Pot a aek = 1k 10106 1D106 Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode Uivough @ resistor, 1000 ohms or smaller, or other adequate bias is used. Gate Trigger Current vs. Junction Temp. Gate Trigger Voltage vs, Junction Temp. Me e (Ld CT | Par 5 Fe Faq 1 cal BAe RTT ET Ty es a 3? = = | an SS a Ba z tee | tT H | Eo. Le Zs Ss] coe eS g.f TTT Py g¢ he Pee P. Bae od 2 [| | | 3 Bo eB oa a 7500290 ~2 eas 07S 1) ae iso 1, — JUNCTION TEMPERATURE (“C) 1, — JUNCTION TEMPERATURE ("c) Holding Current vs. Junction Temp. dv/dt vs. Junction Temp. 0 = 1000 . NX TT PT Try ~ MN CI g2 32 N Vp = Rated Via, pies tt Be KN La Fd zy™ Rec ~ Hood aoe = AEA NE an Lo NCR E gs, re gf,. | X11 : is | | [NUT
4 I eo 5 + :
E 2 nae = 10K i 3y an 7 Roo 10Ko i sa | 4 it fa L 2 WN att im a |_| Se aso aS S078 100 ies 180 ‘65-25 0 25 50 75 100 125 150 1 sUNCTION TEMPERATURE Co) 1, JUNCHIUN TEMPERATURE CO)
580 PLEASANT STREET « WATERTOWN, MA 02172
TEL. (617) 926-0408 « FAX (617) 924-1235, 8:39 PanreD MUSA
ip100.1D106 Gate Pulse for Turn-On vs. Pulse Gate Current Circuit Commutated ‘Turn-Off Time vs. Junction Temp. 1, SIA, V, = Rated Von, 300 | ——— wood (TET Pegg eet: | | | tA eee 3° SOAR a i | r g | ed eS z2 21% aon Pee t y id oy
22 Br w sh
Es gk y0100" ge 6 “j + mo PAT FE | $e N oe i Fu 2 x i 2 — it 8 1 ig op TPN TT Fe | | | i cy ee ee BE os Ps “2s : Bg | 3° H cd 2 1 05 1 2 5 12 5 Wa tes 250 «7S 100 125 150 ig — PULSE GATE CURRENT (mA) 1) “JUNCTION TEMPERATURE (*C) Current vs. On State Voltoge Current vs. Power Dissipation 10 1 fT [Tiff T = __| Junction Temperature = 125°C | OC, : z. Y fo Za y i g FA conduction c 5 t Fi A bel ansie 30" an 3 20 G = Fy ¥ ‘Conduction fr Fa g + y ot Za 1 l| ZeLy _ * i iaA. |_| Lt io at iti | TT] ns ai 0205 10 20 80 10 2 ors OOS ¥;— TYPICAL ON-OTATE VOLTAGE (V) W— MAXIMUM O-STATE POWER DISSIPATION (4) 580 PLEASANT STREFT « WATERTOWN. MA.09172 TEL (61) 826 Odds « FAK (017) 908°1299 8-40 PaTeD MUSA