IAUZ40N06S5N050 LEIDITECH | Alldatasheet

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Description

The uses advanced technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =65A RDS(ON) < 10mΩ @ VGS=10V (Type：7.5mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP65N06DF XXX YYYY 5000PCS Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Value Unit VDS Drain source voltage 60 V VGS Gate source voltage ±20 V ID@TA=25℃ Continuous drain current 20 A ID@TA=70℃ Continuous drain current 11 A IDM Pulsed drain current 60 A PD@TA=25℃ Power dissipation 60 W EAS Single pulsed avalanche energy 30 mJ TSTG Storage Temperature Range -55 to 150 ℃ Tj Operation and storage temperature -55 to 150 ℃ RθJC Thermal resistance, junction-case 2.1 °C/W RθJA Thermal resistance, junction-ambient5) 85 °C/W DFN3*3-8 L Enhancement Mode Power MOSFET

60 N-Channel

www.leiditech.comRev : 01.0 .2021 8 1/5 IAUZ40N06S5N050 IAUZ40N06S5N050 IAUZ40N06S5N050

Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test condition Min. Typ. Max. Unit BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 60 68 V VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 1.2 1.5 2.5 V RDS(ON) Drain-source on-state resistance VGS=10 V, ID=20 A 7.5 10 mΩ RDS(ON) Drain-source on-state resistance VGS=4.5 V, ID=10 A 10 13 mΩ IGSS Gate-source leakage current VGS=±20 V ±100 nA IDSS Drain-source leakage current VDS=60 V, VGS=0 V 1 μA Ciss Input capacitance VGS=0 V, VDS=50 V, ƒ=100 kHz 1182.1 pF Coss Output capacitance 199.5 pF Crss Reverse transfer capacitance 4.1 pF td(on) Turn-on delay time VGS=10 V, VDS=50 V, RG=2 Ω, ID=10 A 17.9 ns tr Rise time 4.0 ns td(off) Turn-off delay time 34.9 ns tf Fall time 5.5 ns Qg Total gate charge ID=10 A, VDS=50 V, VGS=10 V 18.4 nC Qgs Gate-source charge 3.3 nC Qgd Gate-drain charge 3.1 nC Vplateau Gate plateau voltage 2.8 V IS Diode forward current VGS<Vth 60 A ISP Pulsed source current 180 VSD Diode forward voltage IS=20 A, VGS=0 V 1.3 V trr Reverse recovery time IS=10 A, di/dt=100 A/μs 41.8 ns Qrr Reverse recovery charge 36.1 nC Irrm Peak reverse recovery current 1.4 A Note 1、Calculated continuous current based on maximum allowable junction temperature. 2、Repetitive rating; pulse width limited by max. junction temperature. 3、Pd is based on max. junction temperature, using junction-case thermal resistance. 4、VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃. 5、The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.leiditech.comRev : 01.0 .2021 8 2/5 IAUZ40N06S5N050

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A 0.70 0.75 0.85 A1 / / 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 Φ 10 12 14 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 www.leiditech.comRev : 01.0 .2021 8 5/5 IAUZ40N06S5N050