IAUCN04S7N056D INFINEON | Alldatasheet

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Features

 OptiMOSTM power MOSFET for automotive applications  N-channel – Enhancement mode – Normal Level  Extended qualification beyond AEC-Q101  Enhanced electrical testing  Robust design  MSL1 up to 260°C peak reflow  175°C operating temperature  RoHS compliant  100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. PG-TDSON-8-61 Product Summary VDS V RDS(on) 5.59 mΩ ID (chip limited) A Type Package Marking IAUCN04S7N056D PG-TDSON-8-61 7N4N056D Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.0 2024-08-01 Data Sheet

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Table of Contents

Description

Electrical characteristics

Electrical characteristics diagrams Package outline & footprint

Revision history

Rev. 1.0 2024-08-01 Data Sheet

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID V GS = 10 V, Chip limitation1,2) A V GS = 10 V, DC current T a = 100°C, V GS = 10 V, R thJA on 2s2p2,3) Pulsed drain current2) ID,pulse T C = 25°C, t p = 100 μs 135 Avalanche energy, single pulse2) EAS I D = 14 A mJ Avalanche current, single pulse IAS A Gate source voltage VGS ±20 V Power dissipation Ptot T C = 25°C W Operating and storage temperature T j, T stg -55 ... +175 Rev. 1.0 2024-08-01 Data Sheet

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Thermal Characteristics2) at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Thermal resistance, junction - case RthJC 3.7 K/W Thermal resistance, junction - ambient3) RthJA Parameter Symbol Conditions Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (Br)DSS V GS = 0 V, I D = 1 mA V Gate threshold voltage V GS(th) V DS = V GS, I D = 10 μA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS = 40 V, V GS = 0 V, T j = 25°C μA V DS = 40 V, V GS = 0 V, T j = 100°C2) Gate-source leakage current I GSS V GS = 20 V, V DS = 0 V 100 nA Drain-source on-state resistance R DS(on) V GS = 7 V, I D = 15 A 6.10 7.20 mΩ V GS = 10 V, I D = 30 A 4.83 5.59 Gate resistance2) R G Ω Rev. 1.0 2024-08-01 Data Sheet

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics2) Input capacitance C iss V GS = 0 V, V DS = 20 V, f = 1 MHz 614 798 pF Output capacitance C oss 359 467 Reverse transfer capacitance C rss Turn-on delay time t d(on) V DD = 20 V, V GS = 10 V, I D = 30 A, R G = 3.5 Ω ns Rise time t r Turn-off delay time t d(off) Fall time t f Gate Charge Characteristics2) Gate to source charge Q gs V DD = 20 V, I D = 30 A, V GS = 0 to 10 V nC Gate to drain charge Q gd Gate charge total Q g Gate plateau voltage V plateau 4.5 V Reverse Diode Diode continuous forward current2) I S T C = 25°C A Diode pulse current2) I S,pulse T C = 25°C, t p = 100 μs 135 Diode forward voltage V SD V GS = 0 V, I F = 30 A, T j = 25°C 0.8 0.95 V Reverse recovery time2) t rr V R = 20 V, I F = 50 A di F/dt = 100 A/μs ns Reverse recovery charge2) Q rr nC 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Rev. 1.0 2024-08-01 Data Sheet

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet Electrical characteristics diagrams

1 Power dissipation

2 Drain current

3 Safe operating area

4 Max. transient thermal impedance

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet 5 Typ. output characteristics 6 Typ. drain-source on-state resistance 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet 9 Typ. gate threshold voltage 10 Typ. capacitances 11 Typ. forward diode characteristics 12 Typ. avalanche characteristics

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet

13 Typical avalanche energy

14 Drain-source breakdown voltage

15 Typ. gate charge

16 Gate charge waveforms

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet Package Outline Footprint Packaging

OptiMOS TM 7 Automotive Power MOSFET, 40 V IAUCN04S7N056D Rev. 1.0 2024-08-01 Data Sheet Revision 1.0 2024-08-01 Final Data Sheet

All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-08-01 Published by Infineon Technologies AG

81726 Munich, Germany

© 2024 Infineon Technologies AG All Rights Reserved. Do you have any questions about any aspect of this document? Email: erratum@infineon.com Document reference IAUCN04S7N056D-Data-Sheet-10-Infineon IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact the nearest Infineon Technologies Office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.