IAUC26N10S5L245 LEIDITECH | Alldatasheet

Document overview

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Technical content

Features

Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors

Applications

Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification application Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) DFN5*6 5000 Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V Continuous drain current , T C =25 ID A Pulsed drain current , T C =25 ID, pulse 120 A Power dissipation , T C =25 P D W Single pulsed avalanche energy EAS mJ Operation and storage temperature Tstg Tj 55 to 150 Thermal resistance, junction case R θ JC 1.74 Enhancement Mode Field Effect Transistor N-Channel Rev 2.0 : www.leiditech.com 12.01.2019 1/6 IAUC26N10S5L245 use advanced SGTIAUC26N10S5L245 IAUC26N10S5L245 APG40N10NF

Thermal resistance, junction ambient R θ JA Electrical Characteristics at Tj=25 ℃ unless otherwise specified Parameter Symbol Test condition Min. Typ. Max. Unit Drain source breakdown voltage BV DSS V GS =0 V, I D =250 μ A 100 V Gate threshold voltage V GS(th) V DS GS , I D =250 μ A 1.0 2.5 V Drain source on state resistance R DS(ON) V GS =10 V, I D =8 A m Ω Drain source on state resistance R DS(ON) V GS =4.5 V, I D =6 A m Ω Gate source leakage current I GSS 100 nA V GS =20 V 100 Drain-source leakage current IDSS VDS=100 V, VGS=0 V μ A Input capacitance Ciss VGS=0 V, VDS=50 V, ƒ=1 MHz 1190.6 pF Output capacitance Coss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Turn-on delay time td(on) VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A 17.8 ns Rise time tr 3.9 ns Turn-off delay time td(off) 33.5 ns Fall time tf 3.2 ns Total gate charge Qg I D =8 A, V DS =50 V, V GS =10 V 19.8 nC Gate-source charge Qgs 2.4 nC Gate drain charge Q gd 5.3 nC Gate plateau voltage V plateau 3.2 V Diode forward current I S V GS th Pulsed source current I SP 120 A Diode forward voltage V SD I S =8 A, V GS =0 V 1.3 V Reverse recovery time t rr I S =8 A, di/dt=100 μ s 50.2 ns Reverse recovery charge Q rr 95.1 nC Peak reverse recovery current I rrm 2.5 A Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) V DD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. Rev 2.0 : www.leiditech.com 12.01.2019 2/6 IAUC26N10S5L245

Rev 2.0 : www.leiditech.com 12.01.2019 4/6 IAUC26N10S5L245

A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070 Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev 2.0 : www.leiditech.com 12.01.2019 6/6 IAUC26N10S5L245