IAM81008 HP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • RF-IF Conversion Gain From 0.05–5 GHz
  • IF Conversion Gain From DC to 1 GHz
  • Low Power Dissipation: 65␣ mW at VCC = 5 V Typical
  • Single Polarity Bias Supply: VCC = 4 to 8 V
  • Load-insensitive Performance
  • Conversion Gain Flat Over Temperature
  • Low LO Power Requirements: –5␣ dBm Typical
  • Low Cost Plastic Surface Mount Package IAM-81008 Plastic SO-8 Package Pin Configuration

Description

The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commer- cial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applica- tions that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption. Typical applications include frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers. The IAM series of Gilbert multiplier- based frequency converters is fabricated using HP’s 10␣ GHz, f 25␣ GHz fMAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter- metal dielectric and scratch protec- tion to achieve excellent perfor- mance, uniformity and reliability. C block C block C blockC block VCC = 5 V Vee = 0 V LO Input RF Input IF Output Note: No external baluns are required. Optional Low Frequencies RF Ground Optional Low LO Ground Typical Biasing Configuration and Functional Block Diagram POWER CONTROLRF IN VCC1 GROUND AND THERMAL CONTACT GROUND AND THERMAL CONTACT RF OUT AND VCC2GROUND 3 6 5965-9107E

Parameter Absolute Maximum [1] Device Voltage 10 V Power Dissipation2,3 300 mW RF Input Power +14 dBm LO Input Power +14 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance: θjc = 80°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 4.4 mW/°C for TC > 82°C. IAM-81008 Part Number Ordering Information Part Number Devices Per Reel Reel Size IAM-81008-TR1 1000 7" For more information, see “Tape and Reel Packaging for Semmiconductor Devices”. Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω , LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max. GC Conversion Gain RF = 2 GHz, LO = 1.75 GHz dB 6.0 8.5 10 F3 dBRF RF Bandwidth (G C 3 dB Down) IF = 250 MHz GHz 3.5 F3 dB IF IF Bandwidth (G C 3 dB Down) LO = 2 GHz GHz 0.6 P1 dB IF Output Power at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm –6 IP3 IF Output Third Order Intercept Point RF = 2 GHz, LO = 1.75 GHz dBm 3 NF SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB 17 RF Port VSWR f = 0.05 to 3.5 GHz 1.5:1 VSWR LO Port VSWR f = 0.05 to 3.5 GHz 2.0:1 IF Port VSWR f < 1 GHz 1.5:1 RFif RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz dBc –25 LOif LO Leakage at IF Port LO = 1.75 GHz dBm –25 LOrf LO Leakage at RF Port LO = 1.75 GHz dBm –30 ICC Supply Current mA 10 13 16 Note: 1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following page.

5.84/6.20 (.230/.244) 3.80/4.00 (.1497/.1574) Pin 1 1.27 (.050) 4.72/5.00 (.186/.197) 0.10/0.25 (.004/.0098) 0.33/0.51 (.013/.020) 8X 1.35/1.75 (.0532/.0688) 0.19/0.25 (.0075/.0098) 0.41/1.27 (.016/.050) 0°/8° 0.38 – 0.10 0.10 (.004) Note: 1. Dimensions are shown in millimeters (inches). M810