IAM-91563-BLK

IAM-91563 HP | Alldatasheet

Document overview

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• PDF pages: 16

Technical content

Features

• +0 dBm Input IP 3 at 1.9 GHz
• Single +3V Supply
• 8.5 dB SSB Noise Figure at

1.9 GHz

• 9.0 dB Conversion Gain at
• Ultra-miniature Package

Applications

• Downconverter for PCS, PHS, ISM, WLL, and other Wireless Applications IAM-91563

Description

Hewlett-Packard’s IAM-91563 is an economical 3V GaAs MMIC mixer used for frequency down-conver- sion. RF frequency coverage is from 0.8 to 6 GHz and IF coverage is from 50 to 700 MHz. Packaged in the SOT-363 package, this 4.0␣ sq. mm. package requires half the board space of a SOT-143 and only 15% the board space of an SO-8 package. At 1.9 GHz, the IAM-91563 pro- vides 9 dB of conversion gain, thus eliminating an RF or IF gain stage normally needed with a lossy mixer. LO drive power is nominally only -5 dBm, eliminat- ing an LO buffer amplifier. The 8.5 dB noise figure is low enough to allow the system to use a low cost LNA. The -6 dBm Input IP provides adequate system linearity for most commercial applications, but is adjustable to 0 dBm. The circuit uses GaAs PHEMT technology with proven reliability, and uniformity. The MMIC consists of a cascode FET struc- ture that provides unbalanced gm modulation type mixing. An on- chip LO buffer amp drives the mixer while bias circuitry allows a single +3V supply (through a choked IF port). The LO port is internally matched to 50 Ω . The RF and IF ports are high imped- ance and require external match- ing networks. Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking IF and Vd GND 91LO GND RF

4 SOURCE

Note: 1. Package marking provides orienta- tion and identification. LO SOURCE BYPASS 4RF GROUND 2, 5 IF and Vd Simplified Schematic 5965-9973E

Symbol Parameter Units Maximum[1] Vd Device Voltage, RF output to ground V 6.0 VRF, VLO RF voltage or LO voltage to ground V +0.5, -1.0 Pin CW RF Input Power dBm + 1 3 Tch Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance[2]: θch-c = 310°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T C = 25°C (TC is defined to be the temperature at the package pins where contact is made to the circuit board). Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev[2] Gtest Gain in test circuit[1] RF=1890 GHz, IF=250 MHz dB 4.0 9.0 NFtest Noise Figure in test circuit[1] RF=1890 GHz, IF=250 MHz dB 8.5 11.0 Id Device Current mA 6.0 9.0 12.0 NF Noise Figure (RF & IF with external matching, f = 0.9 GHz dB 7.0 IF=250 MHz, LO power=-5 dBm) f = 1.9 GHz 8.5 0.5 f = 2.4 GHz 11.0 f = 4.0 GHz 16.5 f = 6.0 GHz 18.0 Gc Conversion gain (RF and IF with external matching, f = 0.9 GHz dB 11.0 IF=250 MHz, LO power=-5 dBm) f = 1.9 GHz 9.0 1.5 f = 2.4 GHz 7.7 f = 4.0 GHz 4.6 f = 6.0 GHz 1.7 P1 dB Output power @ 1 dB compression (RF and IF with f = 0.9 GHz dBm -6.7 external matching, IF=250 MHz, LO power =-5 dBm) f = 1.9 GHz -8.0 1.3 f = 2.4 GHz -8.7 f = 4.0 GHz -15.0 f = 6.0 GHz -17.8 RLRF RF port return loss f = 0.5 - 6.0 GHz dB -1.7 0.2 RLLO LO port return loss f = 0.5 - 6.0 GHz dB -9.4 0.3 RLIF IF port return loss f = 50 - 700 MHz dB -3.7 0.2 IP3 Input Third Order Intercept Point RF = 1.9 GHz, IF = 250 MHz dBm -6.0 1.3 Id = 9.0 mA, LO power = -5 dBm IP3 Input Third Order Intercept Point RF = 1.9 GHz, IF = 250 MHz dBm 0 1.1 Id = 15 mA, LO power = -2 dBm ISOLL-R LO-RF Isolation RF = 1.9 GHz dB 18 ISOLR-I RF-IF Isolation (No Match) dB 2 ISOLL-I LO-IF Isolation (No Match) dB 4 Notes: 1. Guaranteed specifications are 100% tested in the circuit in Figure 18 in the Applications Information section. 2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification.

IAM-91563 Typical Performance, TC =2 5°C, Vd =3.0 V, RF=1890 MHz, LO = -5 dBm, IF=250 MHz, unless otherwise stated.

IAM-91563 Typical Reflection Coefficients, TC =2 5°C, ZO = 50 Ω , Vd =3 V Frequency (GHz) RF (Mag) RF (Ang) LO (Mag) LO (Ang) IF (Mag) IF (Ang) 0.3 0.39 -8 0.63 -10 0.4 0.39 -9 0.63 -10 0.5 0.39 -10 0.62 -11 0.6 0.39 -11 0.62 -12 0.7 0.40 -14 0.62 -13 0.8 0.91 -18 0.39 -14 0.9 0.91 -21 0.39 -16 1 0.91 -23 0.38 -17 1.1 0.92 -25 0.39 -17 1.2 0.91 -28 0.39 -19 1.3 0.88 -29 0.40 -22 1.4 0.87 -32 0.39 -22 1.5 0.85 -33 0.39 -24 1.6 0.84 -34 0.39 -25 1.7 0.83 -35 0.39 -26 1.8 0.82 -37 0.39 -27 1.9 0.82 -37 0.38 -29 2 0.81 -39 0.39 -29 2.1 0.81 -40 0.38 -31 2.2 0.81 -41 0.38 -31 2.3 0.81 -42 0.37 -32 2.4 0.81 -44 0.37 -33 2.5 0.80 -45 0.36 -34 2.6 0.80 -45 0.36 -35 2.7 0.81 -46 0.35 -36 2.8 0.81 -48 0.35 -36 2.9 0.81 -50 0.34 -37 3 0.82 -51 0.34 -37 3.1 0.83 -53 0.33 -38 3.2 0.83 -55 0.33 -39 3.3 0.83 -56 0.32 -39 3.4 0.85 -59 0.32 -40 3.5 0.86 -61 0.31 -40 3.6 0.87 -64 0.32 -42 3.7 0.85 -67 0.31 -42 3.8 0.83 -71 0.30 -45 3.9 0.83 -71 0.30 -43 4 0.82 -73 0.29 -46 4.1 0.83 -76 0.29 -45 4.2 0.83 -79 0.28 -47 4.3 0.84 -82 0.29 -48 4.4 0.84 -85 0.27 -49 4.5 0.84 -87 0.28 -50 4.6 0.85 -91 0.26 -51 4.7 0.84 -95 0.28 -52 4.8 0.85 -97 0.25 -52 4.9 0.85 -100 0.27 -54 5 0.85 -103 0.25 -54 5.1 0.86 -106 0.27 -57 5.2 0.85 -108 0.25 -56 5.3 0.84 -113 0.27 -58 5.4 0.84 -115 0.25 -58 5.5 0.84 -117 0.27 -61 5.6 0.83 -121 0.25 -61 5.7 0.83 -123 0.27 -64 5.8 0.81 -125 0.25 -65 5.9 0.81 -128 0.26 -67 6 0.80 -130 0.24 -65

Figure 17. Cascode FET Mixer. LO is applied to the gate of FET2. several benefits to the designer. used for 100% RF and DC testing.

250 MHz

1640 MHz

1890 MHz

Figure 18. Test Circuit. appear within this data sheet.

Figure 29. Schematic of Example network and high pass filter. trajectory from Point A to Point B. Figure 30. RF Input Impedance of the stage preceding the mixer. plotted as Point A in Figure 31. Figure 31. IF Input Impedance Match. a value of approximately 8 nH. inductance of the paths to ground. Figure 28. PCB Layout.

1.9 GHz Design Example

(ESD) sensitive devices. Although the IAM-91563 is robust in design, permanent damage may occur to these devices if they are subjected to high energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equip- ment) can discharge without detection and may result in degradation in performance or failure. The IAM-91563 is a ESD Class 1 device. Therefore, proper ESD precautions are recom- mended when handling, inspect- ing, and assembling these devices to avoid damage.

Outline 63 (SOT-363/SC-70) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 1.30 (0.051) REF. 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.25 (0.010) 0.15 (0.006) 1.00 (0.039) 0.80 (0.031) 0.20 (0.008) 0.10 (0.004) 0.30 (0.012) 0.10 (0.004) 0.30 REF. 10° 0.425 (0.017) TYP. DIMENSIONS ARE IN MILLIMETERS (INCHES) Part Number Ordering Information Part Number No. of Devices Container IAM-91563-TR1 3000 7" Reel IAM-91563-BLK 100 antistatic bag

Tape Dimensions and Product Orientation For Outline 63 Device Orientation P F W C D 1 D E A 0 8° MAX. t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. B 0 K 0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B 0 K 0 P D 1 2.24 – 0.10 2.34 – 0.10 1.22 – 0.10 4.00 – 0.10 1.00 + 0.25 0.088 – 0.004 0.092 – 0.004 0.048 – 0.004 0.157 – 0.004 0.039 + 0.010 CAVITY DIAMETER PITCH POSITION D P E 1.55 – 0.05 4.00 – 0.10 1.75 – 0.10 0.061 – 0.002 0.157 – 0.004 0.069 – 0.004 PERFORATION WIDTH THICKNESS W 8.00 – 0.30 0.255 – 0.013 0.315 – 0.012 0.010 – 0.0005 CARRIER TAPE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F 3.50 – 0.05 2.00 – 0.05 0.138 – 0.002 0.079 – 0.002 DISTANCE WIDTH TAPE THICKNESS C Tt 5.4 – 0.10 0.062 – 0.001 0.205 – 0.004 0.0025 – 0.00004 COVER TAPE USER FEED DIRECTION COVER TAPE CARRIER TAPE REEL END VIEW 8 mm 4 mm TOP VIEW 91 91 91 91