HZS RENESAS | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
  • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
  • Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No. Mark Package Code HZS Series Type No. MHD Pin Arrangement 1. Cathode 2. Anode Cathode band Type No. 1 2 B 2 7

Rev.3.00, Mar.11.2004, page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg −55 to +175 °C

Electrical Characteristics

(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance V Z (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0 5 25 0.5 100 5 B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 HZS2 C3 2.4 2.6 5 5 0.5 100 5 A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 HZS3 C3 3.3 3.5 5 5 0.5 100 5 A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3 HZS4 C3 4.2 4.4 5 5 1.0 100 5 A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 HZS5 B3 4.8 5.0 5 5 1.5 100 5 Note: 1. Tested with DC.

Rev.3.00, Mar.11.2004, page 3 of 6 (Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) C1 4.9 5.1 C2 5.0 5.2 HZS5 C3 5.1 5.3 5 5 1.5 100 5 A1 5.2 5.5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 HZS6 C3 6.1 6.4 5 5 2.0 40 5 A1 6.3 6.6 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 HZS7 C3 7.5 7.9 5 1 3.5 15 5 A1 7.7 8.1 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 HZS9 C3 9.3 9.7 5 1 5.0 20 5 A1 9.5 9.9 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 HZS11 C3 11.4 11.9 5 1 7.5 25 5 A1 11.6 12.1 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 HZS12 B3 12.9 13.4 5 1 9.5 35 5 Note: 1. Tested with DC.

Rev.3.00, Mar.11.2004, page 4 of 6 (Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) C1 13.2 13.7 C2 13.5 14.0 HZS12 C3 13.8 14.3 5 1 9.5 35 5 1 14.1 14.7 2 14.5 15.1 HZS15 3 14.9 15.5 5 1 11.0 40 5 1 15.3 15.9 2 15.7 16.5 HZS16 3 16.3 17.1 5 1 12.0 45 5 1 16.9 17.7 2 17.5 18.3 HZS18 3 18.1 19.0 5 1 13.0 55 5 1 18.8 19.7 2 19.5 20.4 HZS20 3 20.2 21.1 2 1 15.0 60 2 1 20.9 21.9 2 21.6 22.6 HZS22 3 22.3 23.3 2 1 17.0 65 2 1 22.9 24.0 2 23.6 24.7 HZS24 3 24.3 25.5 2 1 19.0 70 2 1 25.2 26.6 2 26.2 27.6 HZS27 3 27.2 28.6 2 1 21.0 80 2 1 28.2 29.6 2 29.2 30.6 HZS30 3 30.2 31.6 2 1 23.0 100 2 1 31.2 32.6 2 32.2 33.6 HZS33 3 33.2 34.6 2 1 25.0 120 2 1 34.2 35.7 2 35.3 36.8 HZS36 3 36.4 38.0 2 1 27.0 140 2 Notes: 1. Tested with DC. 2. Type No. is as follows; HZS2B1, HZS2B2, HZS36-3.

Rev.3.00, Mar.11.2004, page 5 of 6 Main Characteristic 0 5 10 15 20 25 30 35 40 −10 −20 −30 −40 −50 0.10 0.08 0.06 0.04 0.02 −0.02 −0.04 −0.06 −0.08 −0.10 mV/°C 5 1 01 52 02 53 03 54 00 HZS2B2 HZS9B2 HZS12B2 HZS16-2HZS4B2HZS6B2 HZS20-2 HZS24-2 HZS30-2 HZS36-2 500 400 300 200 100 20015010050 2.5 mm 3 mm Printed circuit board 100 180 1.6t mm Material: paper phenol × × l l = 5 mm l = 10 mm (Publication value) Zener Current IZ (A) Fig.1 Zener current vs. Zener voltage Zener Voltage VZ (V) 10–5 10–6 10–4 10–3 10–2 10–7 10–8 Zener Voltage Temperature Coefficient γZ (mV/°C) Zener Voltage Temperature Coefficient γZ (%/°C) Fig.2 Temperature Coefficient vs. Zener voltage Zener Voltage VZ (V) %/°C Fig.3 Power Dissipation vs. Ambient Temperature Ambient Temperature Ta (°C) Power Dissipation Pd (mW)

Rev.3.00, Mar.11.2004, page 6 of 6 Package Dimensions 26.0 Min 2.4 Max 2.0 0.4 φ φ

26.0 Min

(reference value) MHD Conforms 0.084 g As of January, 2003 Unit: mm

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 RENESAS SALES OFFICES © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0