HZ12BP HITACHI | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application.
  • Glass package DO-41 structure ensures high reliability.

Ordering Information

Type No. Mark Package Code HZ-P Series Type No. DO-41 Outline 1. Cathode 2. Anode Cathode band Type No. 1 2 2.0 B

Rev.4, Sep. 2000, page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 0.8 W Junction temperature Tj 175 °C Storage temperature Tstg −55 to +175 °C

Electrical Characteristics

(Ta = 25°C) Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ2.0 BP 1.88 2.12 40 200 0.5 25 40 CP 2.00 2.24 HZ2.2 BP 2.08 2.33 40 200 0.7 20 40 CP 2.20 2.45 HZ2.4 BP 2.28 2.56 40 200 1.0 15 40 CP 2.40 2.70 HZ2.7 BP 2.5 2.9 40 200 1.0 15 40 CP 2.7 3.1 HZ3.0 BP 2.8 3.2 40 100 1.0 15 40 CP 3.0 3.4 HZ3.3 BP 3.1 3.5 40 80 1.0 15 40 CP 3.3 3.7 HZ3.6 BP 3.4 3.8 40 60 1.0 15 40 CP 3.6 4.0 HZ3.9 BP 3.7 4.1 40 40 1.0 15 40 CP 3.9 4.4 HZ4.3 BP 4.0 4.5 40 20 1.0 15 40 CP 4.3 4.8 HZ4.7 BP 4.4 4.9 40 20 1.0 10 40 CP 4.7 5.2 Note: 1. Tested with DC.

Rev.4, Sep. 2000, page 3 of 8 Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ5.1 BP 4.8 5.4 40 20 1.0 8 40 CP 5.1 5.7 HZ5.6 BP 5.3 6.0 40 20 1.5 8 40 CP 5.6 6.3 HZ6.2 BP 5.8 6.6 40 20 3.0 6 40 CP 6.2 7.0 HZ6.8 BP 6.4 7.2 40 20 3.5 6 40 CP 6.8 7.7 HZ7.5 BP 7.0 7.9 40 20 4.0 4 40 CP 7.5 8.4 HZ8.2 BP 7.7 8.7 40 20 5.0 4 40 CP 8.2 9.3 HZ9.1 BP 8.5 9.6 40 20 6.0 6 40 CP 9.1 10.2 HZ10 BP 9.4 10.6 40 10 7.0 6 40 CP 10.0 11.2 HZ11 BP 10.4 11.6 20 10 8.0 8 20 CP 11.0 12.3 HZ12 BP 11.4 12.6 20 10 9.0 8 20 CP 12.0 13.5 HZ13 BP 12.4 14.1 20 10 10.0 10 20 CP 13.3 15.0 HZ15 BP 13.8 15.6 20 10 11.0 10 20 CP 14.7 16.5 HZ16 BP 15.3 17.1 20 10 12.0 12 20 CP 16.2 18.3 HZ18 BP 16.8 19.1 20 10 13.0 12 20 CP 18.0 20.3 HZ20 BP 18.8 21.2 20 10 15.0 14 20 CP 20.0 22.4 Note: 1. Tested with DC.

Rev.4, Sep. 2000, page 4 of 8 Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ22 BP 20.8 23.3 10 10 17.0 14 10 CP 22.0 24.5 HZ24 BP 22.8 25.6 10 10 19.0 16 10 CP 24.0 27.6 HZ27 BP 25.1 28.9 10 10 21.0 16 10 CP 27.0 30.8 HZ30 BP 28.0 32.0 10 10 23.0 18 10 CP 30.0 34.0 HZ33 BP 31.0 35.0 10 10 25.0 18 10 CP 33.0 37.0 HZ36 BP 34.0 38.0 10 10 27.0 20 10 CP 36.0 40.0 Notes: 1. Tested with DC.

Rev.4, Sep. 2000, page 5 of 8 Main Characteristic Zener Current IZ (A) Zener Voltage VZ (V) 5 10 15 20 25 30 35 40 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-1 HZ3.0BPHZ5.1BP HZ18BP HZ24BP HZ36BP HZ2.7BP 1.0 0.8 0.6 0.4 0.2 20015010050 Ambient Temperature Ta (°C) Power Dissipation P (W) l=10mm l=5mm l=10mm without heat sink Infinite Heat Sink Plate d l=25mm ll Fig.1 Zener current Vs. Zener voltage Fig.3 Power Dissipation Vs. Ambient Temperature Zener Voltage V (V)Z 05 1 0 15 20 25 30 35 40 −10 −20 −30 −40 −50 %/°C mV/°C Fig.2 Temperature Coefficient Vs. Zener voltage −0.06 −0.04 −0.02 0.02 0.04 0.06 0.08 0.10 −0.08 −0.10 Zener Voltage Temperature Coefficient (%/°C)zγ Zener Voltage Temperature Coefficient (mV/°C)zγ

Rev.4, Sep. 2000, page 6 of 8 Ta = 25°C nonrepetitive t PRSM Time t (s) 10 10 1.010 10 1.0 Nonrepetitive Surge Reverses Power P (W)RSM -5 -4 -3 -2 -1 HZ3.0BP HZ18BP HZ36BP Fig.4 Surge Reverse Power Ratings (Reference Data) Fig.5 Transient Thermal Impedance Time t (s) Transient Thermal Impedance Z (°C/W)th 10−3 10−2 10 −1 1.0 10 10 2 103 103 102 1.0 HZ2.7BP HZ36BP HZ18BP 10mm 10mm Infinite Heat Sink Plate

Rev.4, Sep. 2000, page 7 of 8 Package Dimensions Hitachi Code JEDEC EIAJ Mass (reference value) DO-41 Conforms Conforms 0.38 g Unit: mm 26.0 Min 5.2 Max 26.0 Min 3.0 0.8φ φ

Rev.4, Sep. 2000, page 8 of 8 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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