HZ22A1

HZ11B1 HITACHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

• Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
• Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Ordering Information

Type No. Mark Package Code HZ Series Type No. DO-35 Outline 1. Cathode 2. Anode B 2 Cathode band Type No. 1 2

Rev.2, Nov. 1999, page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 °C Storage temperature Tstg -55 to +175 °C

Electrical Characteristics

(Ta = 25°C) Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ2 A1 1.6 1.8 5 25 0.5 100 5 A2 1.7 1.9 A3 1.8 2.0 B1 1.9 2.1 5 5 0.5 100 5 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 C3 2.4 2.6 HZ3 A1 2.5 2.7 5 5 0.5 100 5 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 HZ4 A1 3.4 3.6 5 5 1.0 100 5 A2 3.5 3.7 A3 3.6 3.8 Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 3 of 8 Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ4 B1 3.7 3.9 5 5 1.0 100 5 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3 C3 4.2 4.4 HZ5 A1 4.3 4.5 5 5 1.5 100 5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2 C3 5.1 5.3 HZ6 A1 5.2 5.5 5 5 2.0 40 5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 C3 6.1 6.4 HZ7 A1 6.3 6.6 5 1 3.5 15 5 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 4 of 8 Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ7 C1 7.2 7.6 5 1 3.5 15 5 C2 7.3 7.7 C3 7.5 7.9 HZ9 A1 7.7 8.1 5 1 5.0 20 5 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 HZ11 A1 9.5 9.9 5 1 7.5 25 5 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 HZ12 A1 11.6 12.1 5 1 9.5 35 5 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 5 of 8 Zener Voltage Reverese Current Dynamic Resistance VZ (V)* Test Condition I R (µµµµA) Test Condition r d (ΩΩΩΩ ) Test Condition Type Grade Min Max I Z (mA) Max V R (V) Max I Z (mA) HZ15 1 14.1 14.7 5 1 11.0 40 5 2 14.5 15.1 3 14.9 15.5 HZ16 1 15.3 15.9 5 1 12.0 45 5 2 15.7 16.5 3 16.3 17.1 HZ18 1 16.9 17.7 5 1 13.0 55 5 2 17.5 18.3 3 18.1 19.0 HZ20 1 18.8 19.7 2 1 15.0 60 2 2 19.5 20.4 3 20.2 21.1 HZ22 1 20.9 21.9 2 1 17.0 65 2 2 21.6 22.6 3 22.3 23.3 HZ24 1 22.9 24.0 2 1 19.0 70 2 2 23.6 24.7 3 24.3 25.5 HZ27 1 25.2 26.6 2 1 21.0 80 2 2 26.2 27.6 3 27.2 28.6 HZ30 1 28.2 29.6 2 1 23.0 100 2 2 29.2 30.6 3 30.2 31.6 HZ33 1 31.2 32.6 2 1 25.0 120 2 2 32.2 33.6 3 33.2 34.6 HZ36 1 34.2 35.7 2 1 27.0 140 2 2 35.3 36.8 3 36.4 38.0 Note: 1. Tested with DC. Note: 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.

Rev.2, Nov. 1999, page 6 of 8 Main Characteristic Zener Current IZ (A) Zener Voltage VZ (V) 5 10 15 20 25 30 35 40 10-2 10-3 10-4 10-5 10-6 10-7 10-8 HZ2B2 HZ9B2 HZ12B2 HZ16-2HZ4B2HZ6B2 HZ20-2 HZ24-2 HZ30-2 HZ36-2 Fig.1 Zener current Vs. Zener voltage 05 1 0 15 20 25 30 35 40 -10 -20 -30 -40 -50 0.10 0.08 0.06 0.04 0.02 -0.02 -0.04 -0.06 -0.08 -0.10 %/°C mV/°C 500 400 300 200 100 20015010050 Ambient Temperature Ta (°C) Power Dissipation P (mW)d 2.5 mm 3 mm Printed circuit board 100 180 1.6t mm Quality: paper phenol × × 5mm Fig.2 Temperature Coefficient Vs. Zener voltage Fig.3 Power Dissipation Vs. Ambient Temperature Zener Voltage V (V) Zener Voltage Temperature Coefficient (%/°C)zγ Z Zener Voltage Temperature Coefficient (mV/°C)zγ

Rev.2, Nov. 1999, page 7 of 8 Package Dimensions Unit: mm Hitachi Code JEDEC EIAJ Mass DO-35 Conforms Conforms 0.13 g 26.0 Min 4.2 Max 26.0 Min 0.5 2.0 φ φ

Rev.2, Nov. 1999, page 8 of 8 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

16 Collyer Quay #20-00

Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg URL NorthAmerica : http://semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia : http://sicapac.hitachi-asia.com Japan : http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong URL : http://semiconductor.hitachi.com.hk Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Semiconductor (America) Inc.

179 East Tasman Drive

San Jose,CA 95134 For further information write to: Colophon 4.0