HZ-P RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Wide spectrum from 1.88 V through 40 V of zener voltage provide flexible application.
- Glass package DO-41 structure ensures high reliability.
Ordering Information
Type No. Mark Package Code HZ-P Series Type No. DO-41 Pin Arrangement 1. Cathode 2. Anode Cathode band Type No. 2.0 B
Rev.6.00, Apr 13, 2004, page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 1.0 W Junction temperature Tj 175 Storage temperature Tstg −55 to +175
Electrical Characteristics
(Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) BP 1.88 2.12 HZ2.0 CP 2.00 2.24 200 0.5 BP 2.08 2.33 HZ2.2 CP 2.20 2.45 200 0.7 BP 2.28 2.56 HZ2.4 CP 2.40 2.70 200 1.0 BP 2.5 2.9 HZ2.7 CP 2.7 3.1 200 1.0 BP 2.8 3.2 HZ3.0 CP 3.0 3.4 100 1.0 BP 3.1 3.5 HZ3.3 CP 3.3 3.7 1.0 BP 3.4 3.8 HZ3.6 CP 3.6 4.0 1.0 BP 3.7 4.1 HZ3.9 CP 3.9 4.4 1.0 BP 4.0 4.5 HZ4.3 CP 4.3 4.8 1.0 BP 4.4 4.9 HZ4.7 CP 4.7 5.2 1.0 Note: 1. Tested with DC.
Rev.6.00, Apr 13, 2004, page 3 of 7 Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) BP 4.8 5.4 HZ5.1 CP 5.1 5.7 1.0 BP 5.3 6.0 HZ5.6 CP 5.6 6.3 1.5 BP 5.8 6.6 HZ6.2 CP 6.2 7.0 3.0 BP 6.4 7.2 HZ6.8 CP 6.8 7.7 3.5 BP 7.0 7.9 HZ7.5 CP 7.5 8.4 4.0 BP 7.7 8.7 HZ8.2 CP 8.2 9.3 5.0 BP 8.5 9.6 HZ9.1 CP 9.1 10.2 6.0 BP 9.4 10.6 HZ10 CP 10.0 11.2 7.0 BP 10.4 11.6 HZ11 CP 11.0 12.3 8.0 BP 11.4 12.6 HZ12 CP 12.0 13.5 9.0 BP 12.4 14.1 HZ13 CP 13.3 15.0 10.0 BP 13.8 15.6 HZ15 CP 14.7 16.5 11.0 BP 15.3 17.1 HZ16 CP 16.2 18.3 12.0 BP 16.8 19.1 HZ18 CP 18.0 20.3 13.0 BP 18.8 21.2 HZ20 CP 20.0 22.4 15.0 Note: 1. Tested with DC.
Rev.6.00, Apr 13, 2004, page 4 of 7 Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)*1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) BP 20.8 23.3 HZ22 CP 22.0 24.5 17.0 BP 22.8 25.6 HZ24 CP 24.0 27.6 19.0 BP 25.1 28.9 HZ27 CP 27.0 30.8 21.0 BP 28.0 32.0 HZ30 CP 30.0 34.0 23.0 BP 31.0 35.0 HZ33 CP 33.0 37.0 25.0 BP 34.0 38.0 HZ36 CP 36.0 40.0 27.0 Notes: 1. Tested with DC.
Rev.6.00, Apr 13, 2004, page 5 of 7 Main Characteristic 1.0 0.8 0.6 0.4 0.2 200 150 100 Power dissipation Pd (W) l=10mm l=10mm without heat sink Plate Infinite Heat Sink Plate l=20mm l l Ambient temperature Ta (°C) Fig.3 Power Dissipation vs. Ambient Temperature –10 –20 –30 –40 –50 %/°C mV/°C –0.06 –0.04 –0.02 0.02 0.04 0.06 0.08 0.10 –0.08 –0.10 Zener voltage temperature coefficient γZ (%/°C) Zener voltage temperature coefficient γZ (mV/°C) Fig.2 Temperature Coefficient vs. Zener Voltage Zener voltage VZ (V) HZ5.1BP HZ18BP HZ24BP HZ36BP 10–2 10–4 10–6 10–8 10–7 10–5 10–3 10–1 Zener current IZ (A) Fig.1 Zener Current vs. Zener Voltage Zener voltage VZ (V) HZ2.7BP HZ3.0BP
Rev.6.00, Apr 13, 2004, page 6 of 7 Ta = 25°C nonrepetitive t PRSM 1.0 1.0 104 Nonrepetitive surge reverses power PRSM (W) HZ3.0BP HZ18BP HZ36BP Time t (s) Fig.4 Surge Reverse Power Ratings (Reference Data) 10–2 10–3 10–4 10–5 10–1 102 103 1.0 102 103 1.0 Fig.5 Transient Thermal Impedance Time t (s) Transient thermal impedance Zth (°C/W) HZ2.7BP HZ36BP HZ18BP 10mm 10mm Infinite Heat Sink Plate 10–2 10–3 10–1 102 103
Rev.6.00, Apr 13, 2004, page 7 of 7 Package Dimensions Package Code JEDEC JEITA Mass (reference value) DO-41 Conforms Conforms 0.38 g
26.0 Min
5.2 Max
3.0 0.8 φ φ As of January, 2003 Unit: mm
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 RENESAS SALES OFFICES © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0