HX05N60 HUIXIN | Alldatasheet

Document overview

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Technical content

Features

⚫ Excellent package for good heat dissipation ⚫ Fully characterized avalanche voltage and current High density cell design for ultra RDS(on) VDS= 60V,ID= 5A RDS(on)< 45mΩ @VGS= 10V

Applications

⚫ Power Switching Application ⚫ Uninterruptible Power Supply Thermal Characteristics SOT-89 Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A Drain Current-PulsedNote1 IDM 20 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance,Junction-to-AmbientNote2 RθJA 104 °C/W 1. Gate 2.Drain 3.Source Marking Code: 05N60 Schematic Diagram 2.Drain 3.Source 1.Gate 6GMK1UL5

Electrical Characteristics

(Ta=25℃ unless otherwise specified) Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=250μA 60 -- -- V Zero Gate Voltage Drain Current I DSS VDS=60V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold VoltageNote3 VGS(th) VDS=VGS,ID=250μA 1.2 -- 2.5 V Drain-Source On-ResistanceNote3 RDS(on) VGS=10V,ID=5A -- 30 45 mΩ VGS=4.5V,ID=5A -- 40 60 mΩ Forward TransconductanceNote3 gFS VDS=5V,ID=5A 11 -- -- S Dynamic Characteristics Input Capacitance Ciss VDS=30V,VGS=0V,f=1MHz -- 979 -- pF Output Capacitance Coss -- 120 -- pF Reverse Transfer Capacitance Crss -- 100 -- pF Switching Characteristics Turn-on Delay Time td(on) VDD=30V, RL=6.7Ω, VGS=10V,RGEN=3Ω -- 5.2 -- nS Turn-on Rise Time tr -- 3 -- nS Turn-off Delay Time td(off) -- 17 -- nS Turn-off Fall Time tf -- 2.5 -- nS Total Gate Charge Qg VDS=30V,ID=5A, VGS=10V -- 22 -- nC Gate-Source Charge Qgs -- 3.3 -- nC Gate-Drain Charge Qgd -- 5.2 -- nC Source-Drain Diode Characteristics Diode Forward VoltageNote3 VSD VGS=0V,IS=5A -- -- 1.2 V Diode Forward CurrentNote2 IS -- -- 5 A 6GMK2UL5

Typical Characteristic Curves VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) ID Drain Current (A) TJ Junction Temperature (℃) Qg Gate Charge (nC) VSD Source-Drain Voltage (V) RDS(on) On-Resistance (mΩ) ID Drain Current (A) ID Drain Current (A) Normalized On-Resistance VGS Gate-Source Voltage (V) IS Reverse Drain Current (A) 6GMK3UL5

VDS Drain-Source Voltage (V) ID Drain Current (A) C Capacitance (pF) Square Wave Pluse Duration (sec) r(t),Normalized Effective Transient Thermal Impedance TJ Junction Temperature (℃) TJ Junction Temperature (℃) VDS Drain-Source Voltage (V) VDSS(BR) Normalized Drain-Source Breakdown Voltage VGS(th) Normalized Gate Threshold Voltage 6GMK4UL5