HX03P60 HUIXIN | Alldatasheet

Document overview

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Technical content

Features

⚫ Halogen and Antimony Free ⚫ VDS= -60V,ID= -2.5A RDS(on)< 110mΩ @VGS= -10V

Applications

⚫ PWM applications ⚫ Load switch ⚫ Power management SOT-23 1. Gate 2.Source 3.Drain Marking Code:03P60 Schematic Diagram 3.Drain Parameter Symbol Value Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -2.5 A Drain Current-Pulsed Note1 IDM -9 A Maximum Power Dissipation P D 1.0 W Junction Temperature T J 175 °C Storage Temperature Range T STG -55 to +175 °CTherm al Resistance,Junction-to-AmbientNote2 RθJA 125 °C/W 6GMK1UL5

Electrical Characteristics

(Ta=25℃ unless otherwise specified) 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. Note: Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-SourceBreakdown Voltage V (BR)DSS VGS=0V,ID=-250μA -60 -- -- V Zero Gate Voltage Drain Current I DSS VDS=-60V,VGS=0V -- -- -1 μA Gate-Body Leakage Current I GSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold VoltageNote3 VGS(th) VDS=VGS,ID=-250μA -1.5 -2 -3 V Drain-SourceOn-Resistance Note3 RDS(on) VGS=-10V,ID=-2.5A -- 80 110 mΩ VGS=-4.5V,ID=-1.5A -- 110 160 mΩ Forward TransconductanceNote3 gFS VDS=-5V,ID=-1.5A -- 3 -- S Dynamic Characteristics Input Capacitance C iss VDS=-30V,VGS=0V,f=1MHz -- 450 -- pF Output Capacitance C oss -- 36 -- pF Reverse Transfer Capacitance C rss -- 22 -- pF Switching Characteristics Turn-on Delay Time t d(on) VDD=-30V,ID=-1.5A VGS=-10V,RGEN=3Ω-- 40 -- nS Turn-on Rise Time t r -- 35 -- nS Turn-off Delay Time t d(off) -- 15 -- nS Turn-off Fall Time t f -- 10 -- nS Total Gate Charge Q g VDS=-30V,ID=-1.5A, VGS=-10V -- 11.5 -- nC Gate-Source Charge Q gs -- 2.7 -- nC Gate-Drain Charge Q gd -- 1.6 -- nC Source-Drain Diode Characteristics Diode Forward VoltageNote3 VSD VGS=0V,IS=-2.5A -- -- -1.2 V Diode Forward CurrentNote2 IS -- -- -2.5 A 6GMK2UL5

Typical Characteristic Curves -VDS Drain-Source Voltage (V) - ID Drain Current (A) TJ Junction Temperature (℃) Qg Gate Charge (nC) -VSD Source-Drain Voltage (V) RDS(on) On-Resistance (Ω) -ID Drain Current (A) -ID Drain Current (A) Normalized On-Resistance -VGS Gate-Source Voltage (V)-IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) 6GMK3UL5 0.4 0.0 0.3 0.1 0.2 0 2 4 6 8 VGS=10V VGS=4.5V

-ID Drain Current (A) C Capacitance (pF) Square Wave Pluse Duration (sec) r(t),Normalized Effective Transient Thermal Impedance -ID Drain Current (A) -VDS Drain-Source Voltage (V) TJ Junction Temperature (℃) TJ Junction Temperature (℃) -VDS Drain-Source Voltage (V) -V(BR)DSS Normalized Drain-Source Breakdown Voltage (V) 6GMK4UL5