HW109A

HW109A KEXIN | Alldatasheet

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1www.kexin.com.cn High-sensitivity InSb Hall element HW109A ■ Features

• High-sensitivity InSb Hall element
• SMT package with sensing area leaned 45° ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Input Current IC 20 mA Operating Temp. Range Topr –40 to +110 ℃ Storage Temp. Range Tstg –40 to +125 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Output Hall Voltage VH Const. Voltage Drive B=50mT, Vc=IV 122 320 mV Input Resistance Rin B=0mT, Ic=0.1mA 250 450 Ω Output Resistance Rout B=0mT, Ic=0.1mA 250 450 Ω Offset Voltage Vos B=0mT, Vc=IV -7 +7 V Temp. Coefficient of VH αVH B=50mT, Ic=5mA -1.8 %/℃ Temp. Coefficient of Rin αRin B=0mT, Ic=0.1mA -1.8 %/℃ Dielectric Strength 100V D.C 1.0 MΩ Notes : 1. VH = VHM – Vos (VHM:meter indication) 2. V H = X X 100 3. R in = X X 100 R in – T V H ) – V H – T R in ) – R in V H T = 20˚C, T = 0˚C, T = 40˚C Hall element Unit: mm 3. Input 4. Output(±) 1. Input(±) 2. Output (±) (±)

■ Typical Characteristics ■ Classification of Output Hall Voltage (VH) Rank VH [ mV ] Conditions A 122 to 150 B 144 to 174 C 168 to 204 D 196 to 236 E 228 to 274 F 266 to 320 Note : When ordering, specify 3-rank or wider range(e·g·,BCD). B=50mT, Vc=IV Constant Voltage Drive HW109A Input Current(mA)

• Input Current Derating Curve N ote : R in of H all elem ent decreases rapidly as am bient tem perature increases. Ensure com pliance w ith input current derating curve envelope, throughout the operating tem perature range. 0–60 –40 –20 0 20 40 60 80 100 120 Input Resistance R in : 250 to 450 Ambient Temperature.(˚C) Input Voltage(V)
• Input Voltage Derating Curve N ote : For constant-voltage drive, stay w ithin this input voltage derating curve envelope. 2.0 1.0 0–60 –40 –20 0 20 40 60 80 100 120 Input Resistance R in : 250 to 450 Ambient Temperature.(˚C) 600.0 500.0 400.0 300.0 200.0 100.0 0.0 0 10 20 30 40 50 Ic Vin 2000 1800 1600 1400 1200 1000 800 600 400 200 -50 0 50 100 150 V H -BR in-T Ambient Temperature(˚C) Magnetic Flux Density B (mT) Ic = 5 (mA) Vc = 1 (V) Ta = 25 (˚C) Ic const Vc const Output Voltage:V H (mV ) Input Resistance:R in ( ) Hall element www.kexin.com.cn 2

–50 0 50 100 150 2000 1750 1500 1250 1000 750 500 250 Ic Vin –50 0 50 100 150 Ic Vin 1200 1000 800 600 400 200 5 10 15 20 Ic Vin 5 10 15 20 Ic Vin V H -Vc, V H -IcV H V OS -Vc, V OS -IcV OS *Magnetic Flux Density 1(mT)=10(G) Ambient Temperature(˚C) Ambient Temperature(˚C) Output Voltage:V H (mV )Offset Voltage:V os (mV ) Ic (mA) Input Current Vc (V) Input Voltage Ic (mA) Input Current Vc (V) Input Voltage Ic:(mA) Vc:(V) Ic:(mA) V c :(V) Ic const Vc const B = 50 (mT) Ta = 25 (˚C) Ic const Vc const B = 0 (mT) Ta = 25 (˚C) Ic const Vc const Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) Ic const Vc const Output Voltage:V H (mV )Offset Voltage:V os (mV ) Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) Hall element www.kexin.com.cn 3