HST04S80D HUIXIN | Alldatasheet

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Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 800 V Repetitive peak reverse voltage (Tj=25℃) VRRM 800 V RMS on-state current (TC≤99℃) IT(RMS) 4 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 44 I2t value for fusing (tp=10ms , Tj=25℃) I2t 8 A2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) dI/dt 50 A/μs Peak gate current (tp=20μs , Tj=125℃) IGM 4 A Average gate power dissipation (Tj=125℃) PG(AV) 0.5 W Peak gate power PGM 10 W Symbol Value Unit IT(RMS) 4 A VDRM /VRRM 800 V IGTⅠ/Ⅱ/Ⅲ 10/10/10 mA HST04S80D 4A TRIAC Rev.01 DESCRIPTION: The HST04S80D triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. The HST04S80D embeds a TVS structure to absorb the inductive turn-off energy such as those described in the IEC 61000-4-5 standards. Package TO-252 is RoHS compliant. 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 5

(Tj=25℃; non-repetitive,off-state;FIG.8) Vpp 3 kV ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅰ-Ⅱ-Ⅲ MAX. 10 mA VGT Ⅰ-Ⅱ-Ⅲ MAX. 1 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V IL IG =1.2IGT Ⅰ-Ⅲ MAX. mA Ⅱ 45 IH IT =100mA MAX. 25 mA dV/dt VD=540V Gate Open Tj =125℃ MIN. 500 V/μs (dI/dt)c (dV/dt)c=10V/μs, Tj=125℃ MIN. 3 A/ms ton IG=20mA IA=200mA IR=20mA Tj=25℃ TYP. 2.5 μs toff 25 VCL ICL=0.1mA tp=1ms MIN. 850 V STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM ITM =5.6A tp=380μs Tj=25℃ 1.55 V VTO Threshold voltage Tj=125℃ 0.73 V RD Dynamic resistance Tj=125℃ 171 mΩ IDRM VD =VDRM VR =VRRM Tj=25℃ 5 μA IRRM Tj=125℃ 0.25 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 4.5 ℃/W Rth(j-a) junction to ambient (AC) 120 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 5

FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 0 1 2 3 4 5 P(W) IT(RMS) (A) 99℃ 0 25 50 75 100 125 IT(RMS) (A) TC(℃) FIG.3: RMS on-state current versus ambient temperature (printed circuit board FR4,copper thickness:35μm)(full cycle) FIG.4: Surge peak on-state current versus number of cycles 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 IT(RMS) (A) Ta(℃) ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine FIG.5: On-state characteristics XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX XXXXXXXXXXX FIG.6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms, and corresponding value of I2t (dI/dt<50A/μs) 0.1 0 0.5 1 1.5 2 ITM(A) VTM(V) Tj=25℃typ Tj=25℃max Tj=125℃typ dI/dt ITSM I2t 100 0.01 0.1 1 10 tp(ms) ITSM(A), I2t(A2s) 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 5

FIG.7: Relative variations of gate trigger current, holding current and latching current versus junction temperature 0.5 1.5 2.5 -40 -20 0 20 40 60 80 100 120 140 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II)&IH IGT(III) IL FIG.8：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R 14Ω L 44μH RG 300Ω 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 5

Reflow Condition Pb-Free assembly (see figure at right) Pre Heat -Temperature Min (Ts(min)) +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquidus Temp (TL)to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max Reflow -Temperature(TL) (Liquidus) +217℃ -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃of actual Peak Temp (tp) 20-40secs. Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed +260℃ Reflow condition Temperature TS(min) TS(max) TL TP tp tL time to peak temperatue Time (t 25℃ to pea k) Ramp-up Ramp-down Preheat Critical Zone TL to TP ts PACKAGE MECHANICAL DATA Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.15 0.86 0.60 0.083 0.026 0.016 0.098 0.006 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 E1 4.63 0.182 E H B G L DETAIL A DETAIL A A C D 5.30REF 0.209REF 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 5of 5