HST01S80Q HUIXIN | Alldatasheet

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Parameter Symbol Value Unit Storage junction temperature range T stg -40-150 ℃ Operating junction temperature range T j -40-125 ℃ Repetitive peak off-state voltage (Tj=25℃) V DRM 800 V Repetitive peak reverse voltage (Tj=25℃) V RRM 800 V RMS on-state current (TC≤106℃) I T(RMS) 1 A Non repetitive surge peak on-state current (full cycle , tp=20ms , Tj=25℃) ITSM A Non repetitive surge peak on-state current (full cycle , tp=16.6ms , Tj=25℃) 15.4 I2t value for fusing (tp=10ms , Tj=25℃) I 2t 0.98 A2s Critical rate of rise of on-state current (IG=2×IGT , f=100Hz , Tj=125℃) dI/dt 100 A/μs Peak gate current (tp=20μs , Tj=125℃) I GM 1 A Positive applied gate voltage VGM 15 V Symbol Value Unit IT(RMS) 1 A VDRM /VRRM 800 V IGTⅡ/Ⅲ 10/10 mA HST01S80Q 1A TRIAC Rev.01 DESCRIPTION: The HST01S80Q triac is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as heating regulation, induction motor starting circuits, for phase control operation in light dimmers, motor speed controllers. The HST01S80Q embeds a TVS structure to absorb the inductive turn-off energy such as those described in the IEC 61000-4-5 standards. At the same time, the triac shields the positive signal trigger to reduce the probability of product misoperation. It is triggered with a negative gate current flowing out of the gate pin. Package SOT-223 is RoHS compliant. 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 1of 5

Average gate power dissipation (Tj=125℃) P G(AV) 0 .1 W Peak gate power PGM 2 W Peak pulse voltage (Tj=25℃; non-repetitive,off-state;FIG.8) Vpp 2 .5 k V ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Quadrant Value Unit IGT VD =12V RL =33Ω Ⅱ-Ⅲ MAX. 10 mA VGT Ⅱ-Ⅲ MAX. 1.3 V VGD VD =VDRM Tj =125℃ RL =3.3KΩ Ⅱ-Ⅲ MIN. 0.15 V IL IG =1.2IGT MAX. mA Ⅲ 20 IH IT =100mA MAX. 20 mA dV/dt V D=540V Gate Open Tj =125℃ MIN. 1000 V/μs (dI/dt)c (dV/dt)c=15V/μs, T j=125℃ M I N . 2 A / m s ton IG=20mA IA=200mA IR=20mA Tj=25℃ TYP. 2.5 μs toff 25 VCL I CL=0.1mA tp=1ms MIN. 950 V STATIC CHARACTERISTICS Symbol Parameter Value(MAX.) Unit VTM I TM =1.1A tp=380μs T j=25℃ 1 .3 V VTO Threshold voltage T j=125℃ 0 .8 V RD Dynamic resistance T j=125℃ 385 mΩ IDRM VD =VDRM VR =VRRM Tj=25℃ 2 μ A IRRM Tj=125℃ 0 .2 m A THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case (AC) 15 ℃/W Rth(j-a) junction to ambient ( AC, in free air, S=5cm2) 55 ℃/W 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 2of 5

FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 0.2 0.4 0.6 0.8 1.2 1.4 0 0.2 0.4 0.6 0.8 1 P(W) IT(RMS)(A) 106℃ 0.2 0.4 0.6 0.8 1.2 0 2 55 07 5 1 0 0 1 2 5 IT(RMS)(A) TC(℃) FIG.3: RMS on-state current versus ambient temperature (free air convection) FIG.4: Surge peak on-state current versus number of cycles 55℃ 0.2 0.4 0.6 0.8 1.2 0 2 55 07 5 1 0 0 1 2 5 IT(RMS)(A) Ta(℃) ITSM(A) Number of cycles Tc=25℃,tp=20ms,one cycle,sine FIG.5: On-state characteristics XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX XXXXXXXXXXX FIG.6: Non-repetitive surge peak on-state current for a sinusoidal pulse 0.1 01234 ITM(A) VTM(V) Tj=25℃typ 0.1 100 1000 0.01 0.1 1 10 tp(ms) ITSM(A) 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 3of 5

FIG.7: Relative variations of gate trigger current, holding current and latching current versus junction temperature 0.5 1.5 2.5 ‐ 4 0 ‐ 2 002 04 06 08 0 1 0 0 1 2 0 1 4 0 Tj(℃) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) IGT(I/II)&IH IGT(III) IL FIG.8：Test circuit for inductive and resistive loads to IEC-61000-4-5 standards AC INPUT Filtering Unit IEC61000-4-5 Standards Surge Generator 1.2/50μS voltage surge 8/20μS current surge RGen Load Model R 40Ω L 55μH RG 300Ω 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 4of 5

Reflow Condition Pb-Free assembly (see figure at right) Pre Heat -Temperature Min (Ts(min)) +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquidus Temp (TL)to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max Reflow -Temperature(TL) (Liquidus) +217℃ -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃of actual Peak Temp (tp) 20-40secs. Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed +260℃ Reflow condition Temperature TS(min) TS(max) TL TP tp tL time to peak temperatue Time (t 25℃ to pea k) Ramp-up Ramp-down Preheat Critical Zone TL to TP ts PACKAGE MECHANICAL DATA Dimensions Millimeters InchesRef. A H J 1.5 2.9 0.6 1.8 3.1 0.8 0.059 0.002 0.114 0.024 0.071 0.122 0.031 0.22 0.32 3.3 6.7 7.3 0.264 0.287 0.009 0.013 6.3 6.7 0.248 0.264 3.7 0.130 0.146 1.5 2.0 0.059 0.079 K B C D E G F 0.06 1.6 0.01 0.10 3.0 0.7 0.26 6.5 3.5 4.4 2.2 1.75 7.0 0.9 0.063 0.118 0.028 0.010 0.256 0.138 0.173 0.087 0.069 0.276 0.035 0.001 0.004 0.5 1.0 0.020 0.039 A C D E F G H J K B 0.8 1.0 0.0390.031 4.8 0.189 2.4 0.094 3 of 1Page 1.0Rev. huixin@hxkj.hk+86-769-22857832 huixin@hxkj.hk+86-769-22857832Rev. 1.0 Page 5of 5